Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Kioxia Corporation

Hiroshi Tokue

Ikuo Yoneda

Ryoichi Inanami

Takumi Ota

Masayuki Hatano

Shinji Mikami

A method of designing a template pattern used for imprint lithography, includes generating data of a dummy template pattern to be formed in a third area between first and second areas of a template based on data of a design pattern of the template, the data of the dummy template pattern being generated so that a third surface area ratio showing a ratio of a surface area of the third area to an area of the third area is set smaller than a first surface area ratio showing a ratio of a surface area of the first area to an area of the first area and larger than a second surface area ratio showing a ratio of a surface area of the second area to an area of the second area.

Method of designing a template pattern, method of manufacturing a template and method of manufacturing a semiconductor device

An imprint pattern forming method includes contacting a template with a pattern in a front surface with an imprint material formed in a substrate to fill the imprint material into the pattern, curing the imprint material filled in the pattern to form an imprint material pattern, and after forming the imprint material pattern, separating the template from the imprint material pattern while applying pressure to the back surface of the template.

Imprint pattern forming method

According to one embodiment, a semiconductor manufacturing apparatus includes a substrate stage, a transfer unit, and a control unit. A substrate is settable on the substrate stage. The transfer unit is configured to transfer a pattern having an uneven configuration onto a major surface of the substrate by attachably and removably holding a template. The pattern is provided in the transfer surface. The control unit is configured to acquire information relating to a number of foreign objects on the major surface prior to the transferring of the pattern. The control unit adds the number for a plurality of the substrates including the pattern transferred by the transfer unit. The control unit causes the transfer unit not to implement the transferring of the pattern in the case where the sum has reached the upper limit.

Semiconductor manufacturing apparatus and method for manufacturing semiconductor device

A patterning method according to an embodiment of the present invention comprises: acquiring information about a surface state of an underlying film formed on a substrate; determining, based on the surface state, whether irregularity/foreign matter is present in each shot region in which a pattern is to be formed; and solidifying a resist agent while a first template, when it is determined that no irregularity/foreign matter is present in the shot region, or a second template that is different from the first template, when it is determined that irregularity/foreign matter is present in the shot region, is brought close to the underlying film on the shot region at a certain distance with the resist agent therebetween.

Patterning method

A method for forming an imprint pattern includes:

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Yokohama, Japan

Hiroshi Tokue