Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Hiroshi Tayanaka

Masashi Nakata

Naoyuki Sato

Yuki Miyanami

Yorito Sakano

Yoshiya Hagimoto

Kentaro Akiyama

Yoichi Ueda

Ryosuke Matsumoto

Takashi Oinoue

Yusuke Matsumura

Yuuji Inoue

Tomohiro Takahashi

Takeshi Matsushita

Ryoji Suzuki

Akira Matsumoto

Takashi Machida

Susumu Ooki

Junichi Furukawa

Fumiaki Okazaki

The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit.

Solid-state image sensing device and electronic device

This technology relates to a solid-state image sensor configured to make smaller the chip size of a CIS that uses an organic photoelectric conversion film, and to an electronic apparatus. A solid-state image sensor according to a first aspect of this technology is characterized in that it includes a first substrate and a second substrate stacked one on top of the other and a first organic photoelectric conversion film formed on the first substrate and that a latch circuit is formed on the second substrate. This technology may be applied to back-illuminated CISs, for example.

Solid-state image sensor and electronic apparatus

Provided is an imaging apparatus that includes a pixel array portion, a plurality of unit pixels being arranged in the pixel array portion and a driving unit controls an operation of the unit pixel, in which the unit pixel includes a photoelectric converter, a charge retention unit configured to retain a charge, a charge-voltage converter converts the charge into a voltage, a first transmitting unit transmits the charge from the photoelectric converter to the charge retention unit, a second transmitting unit transmits the charge from the photoelectric converter to the charge-voltage converter, and a third transmitting unit transmits the charge from the charge retention unit to the charge-voltage converter.

Imaging apparatus, driving method, and electronic device

A solid state imaging device that includes a phase difference detection pixel which is a pixel for phase difference detection; a first imaging pixel which is a pixel for imaging and is adjacent to the phase difference detection pixel; and a second imaging pixel which is a pixel for imaging other than the first imaging pixel. An area of a color filter of the first imaging pixel is smaller than an area of a color filter of the second imaging pixel.

Solid state imaging device, manufacturing method of the same, and electronic equipment

The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.

Methods and apparatus for image processing. The method comprises generating a first image having a first resolution, searching, by processing circuitry, the first image to determine whether a target object can be identified in the first image, specifying, when it is determined that the target object can be identified in the first image, a region-of-interest in the first image, generating, when it is determined that the target object cannot be identified in the first image, a second image having a second resolution higher than the first resolution, searching, by the processing circuitry, the second image to determine whether the target object can be identified in the second image, and specifying, when it is determined that the target object can be identified in the second image, a region-of-interest in the second image.

Image processing device, image processing method, and image processing system

Only a necessary region is imaged on the basis of a result of interleaving imaging. An imaging apparatus includes an imaging element, an analog-to-digital converter, and a conversion control unit. The imaging element generates analog signals of a plurality of pixels for a plurality of pixel blocks each including a plurality of pixels. The analog-to-digital converter performs analog-to-digital conversion processing for converting an analog signal into a digital signal. The conversion control unit controls the analog-to-digital conversion processing of a plurality of pixels included in a predetermined pixel block according to a difference between a digital signal of a representative pixel in the predetermined pixel block in the plurality of pixel blocks and a predetermined reference value.

Imaging apparatus and imaging control method

The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit.

Provided is an imaging apparatus that includes a pixel array portion, a plurality of unit pixels in the pixel array portion, and a driving unit that controls an operation of the unit pixel. The unit pixel includes a photoelectric converter, a charge retention unit that retains a charge, a charge-voltage converter that converts the charge into a voltage, a first transmitting unit that transmits the charge from the photoelectric converter to the charge retention unit, a second transmitting unit that transmits the charge from the photoelectric converter to the charge-voltage converter, and a third transmitting unit that transmits the charge from the charge retention unit to the charge-voltage converter.

The present technology relates to a solid-state image sensing device and an electronic device capable of reducing noises. The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part. The first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type.

The present technology relates to a solid-state imaging apparatus, a manufacturing method therefor, and an electronic apparatus by which fine pixel signals can be suitably generated. A charge accumulation section that is formed on a first semiconductor substrate and accumulates photoelectrically converted charges, a charge-retaining section that is formed on a second semiconductor substrate and retains charges accumulated in the charge accumulation section, and a transfer transistor that is formed on the first semiconductor substrate and the second semiconductor substrate and transfers charges accumulated in the charge accumulation section to the charge-retaining section are provided. A bonding interface between the first semiconductor substrate and the second semiconductor substrate is formed in a channel of the transfer transistor.

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Kanagawa, Japan

Hiroshi Tayanaka