Agency of Industrial Science and Technology

Kogyo Gijutsuin

Ministry of International Trade & Industry

Hiroshi Tateno

Shoei Kataoka

Yasuo Komamiya

Hideo Yamada

Shigeki Sakai

Nobuo Hashizume

Mitsuo Kawashima

Hiroyuki Fujisada

Morisue Mititada

A quasiparticle control device including a Josephson junction element formed of a pair of superconductors joined to each other, with a weak link part intervening therebetween, and a third electrode provide on the weak link part. The characteristics of the Josephson junction of the Josephson junction element is controlled by injecting quasiparticles to the third electrode.

Quasiparticle injection control type superconducting device

Occurrence of high field domain in the conventional Gunn diode is prevented by covering a solid body such as a semiconductor element partially or wholly by a dielectric member or by a control element such as a metallic layer coupled reactively with the solid body through a dielectric member, whereby a solid state element having a negative differential conductivity is obtained. Such a type of negative-resistance solid state element, together with its various modes of embodimental construction disclosed herein, affords a superior solid state element which is applicable to amplifiers, oscillators, logic memories, and the like of millimeter or submillimeter bands.

Negative resistance element circuit combinations

In a high electric field domain device composed of a plurality of circuit elements each provided with a high electric field domain-generating electrode and a high electric field domain-suppressing electrode, logic operations can be performed by preparatorily applying affirmative signals and their corresponding negative signals to the suppressing electrodes of the individual circuit elements and subsequently applying pulse-coded signals of affirmations and negations to the generating electrodes of the circuit elements which have had the affirmative and corresponding negative signals applied in advance thereto.

Logic circuit system using high electric field domain

A transmission line is disclosed which comprises a conductive layer, a resistive semiconductor layer disposed on the conductive layer and a blocking electrode disposed on the resistive semiconductor layer. By applying a biasing voltage between the blocking electrode and the conductive layer, a depletion layer is produced in the resistive semiconductor layer, the depletion layer formed in the semiconductor layer being used as a medium for transmission of electromagnetic wave.

Transmission line for electromagnetic wave

An improved negative resistance element is disclosed, the element being composed of a semiconductor element and having an effective negative electroconductivity in a high electric field, the element being constructed so that the sectional area of the region near the anode is made larger than the sectional area of the other regions of the element, whereby the distribution of the high electric field in the interior of the element is made uniform along the element, that is, from the region near the anode toward the region near the cathode to thereby broaden the region having an effective negative resistance. Furthermore, and in an alternative embodiment, there is disclosed a negative resistance element in whch the region near the cathode besides the region near the anode is also made to have a larger sectional area than the other regions of the element.

Growing community of inventors

Tanashi, Japan

Hiroshi Tateno