Fujifilm Corporation

Fuji Photo Film Company, Limited

Mitsubishi Materials Corporation

Honda Giken Kogyo Kabushiki Kaisha

Mitsubishi Kinzoku Kabushiki Kaisha

Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

Honda Motor Co., Ltd.

Other

Pioneer Electronic Corporation

Dainippon Ink and Chemicals, Incorporated

Mitsubishi Metal Corporation

Honda Giken Kabushiki Kaisha

Diamet Corporation

Honda Giken Kogyo Kabushiki

Hiroshi Tanaka

Kentaro Tokiwa

Takehiko Senba

Noriaki Nagatomo

Mikio Watanabe

Toshiaki Fujita

Hisayoshi Tsubaki

Sugio Makishima

Hitoshi Inaba

Yoshihiro Ito

Kazuo Shimura

Eiji Ishiyama

Takeshi Ohkubo

Tadao Yato

Nobuyoshi Nakajima

Kazuo Shiota

Shuichi Ohtsuka

Norihisa Haneda

Yasuhiro Shinkai

Yasuhisa Ohtake

Tatsunori Kobayashi

Masahiko Sugimoto

Koji Ichikawa

Koichi Sakamoto

Manabu Hyodo

Chiaki Kumagai

Kazutaka Fujiwara

Akio Kobayashi

Koichi Hikichi

Shoji Yamashita

Yasumasa Fujita

Akio Umemura

Kazuta Takeshima

Akira Yoda

Keiichiro Takahashi

Takeshi Konno

Masanori Yoshida

Yoshiki Kawaoka

Makoto Nakazawa

Atsuhiko Ishihara

Koichi Yahagi

Jiro Kajiwara

Makoto Harigae

Toshiaki Kikuchi

Yukihiro Kawada

Seiji Sagou

Iwao Kawashima

Yasushi Magaki

Mitsuaki Yamazaki

Makoto Kudou

Kazuhiko Sakaguchi

Asa Namiki

Takeshi Onoue

Fusao Sakata

Kazuhiro Itoh

Mutuo Sugisaki

Koichiro Oka

Atsushi Misawa

Izumi Miyake

Kinya Mizuno

Kenji Kawaguchi

Masaki Kobayashi

Minoru Ueda

Eiji Kittaka

Seiji Hamaoka

Masahiro Terada

Yusuke Funayose

Yoshiaki Hirakata

Satoshi Nakamura

Masayuki Toriyama

Yorihisa Yamamoto

Yoshihiro Takada

Tatsuo Hayashi

Kiyotaka Hayashi

Kenji Hattori

Kazukiyo Tamada

Daisuke Ito

Kazuhiro Tokuda

Yukio Tsuchiya

Hiroshi Takamatsu

Kazunori Igarashi

Sadaaki Hagino

Yuji Tsushima

Atsushi Ito

Shunichi Takahashi

Masahide Yokoo

Hiroshi Yamashita

Yasuyuki Ogata

Kanji Hosoki

Shunji Akamatsu

Katsumi Ichikawa

Tomomitsu Muta

Kikuo Otsuka

Etsumi Handa

Hiroaki Ikeda

Kazumi Eto

Naoki S Rikita

Seiji Harada

Eturo Morita

Toshio Onoshita

A metal nitride material for a thermistor consists of a metal nitride represented by the general formula: M(AlSi)(NO)(where 'M' represents at least one of Ti, V, Cr, Mn, Fe, and Co, 0.0&#x3c;v&#x3c;0.3, 0.70&#x2264;y/(x+y)&#x2264;0.98, 0.45&#x2264;z&#x2264;0.55, 0&#x3c;w&#x2264;0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. A method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using an M-Al&#x2014;Si alloy sputtering target (where 'M' represents at least one of Ti, V, Cr, Mn, Fe, and Co).

Metal nitride material for thermistor, method for producing same, and film type thermistor sensor

Provided are a temperature sensor that is hard to increase resistance in the electrode structure with respect to a Ti&#x2014;Al&#x2014;N thermistor material layer even under a high-temperature environment, and has a high reliability with a high heat resistance as well as a method for producing the same. The temperature sensor includes an insulation substrate; a thin film thermistor portion formed on the insulation substrate; and a pair of pattern electrodes formed on the insulation substrate with a pair of opposed electrode portions being arranged so as to be opposed to each other on the thin film thermistor portion, wherein the thin film thermistor portion is made of a Ti&#x2014;Al&#x2014;N thermistor material, and the pair of pattern electrodes has a Ti&#x2014;N bonding layer formed on the thin film thermistor portion and an electrode layer made of a noble metal formed on the bonding layer.

Temperature sensor and method for producing same

A metal nitride material for a thermistor consists of a metal nitride represented by the general formula: MAl(NO)(where 'M' represents at least one of Fe, Co, Mn, Cu, and Ni, 0.70&#x2264;y/(x+y)&#x2264;0.98, 0.45&#x2264;z&#x2264;0.55, 0&#x3c;w&#x2264;0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. A method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using an M-Al alloy sputtering target (where 'M' represents at least one of Fe, Co, Mn, Cu, and Ni).

Metal nitride material for thermistor, method for producing same, and film-type thermistor sensor

Provided are a metal nitride film for a thermistor, which has an excellent bending resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride film for a thermistor, which consists of a metal nitride represented by the general formula: TiAlN(where 0.70&#x2264;y/(x+y)&#x2264;0.95, 0.4&#x2264;z&#x2264;0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase, and the peak ratio of the diffraction peak intensity of a-axis orientation (100) relative to the diffraction peak intensity of c-axis orientation (002) (i.e., the diffraction peak intensity of a-axis orientation (100)/the diffraction peak intensity of c-axis orientation (002)) is 0.1 or lower in X-ray diffraction.

Metal nitride film for thermistor, process for producing same, and thermistor sensor of film type

Provided is a temperature sensor which does not easily cause a crack in a Ti&#x2014;Al&#x2014;N-based thermistor material layer when the film is bent, can be directly deposited on a film or the like without firing, and has a high reliability with a high heat resistance. The temperature sensor includes an insulating film, a thin film thermistor portionmade of a Ti&#x2014;Al&#x2014;N-based thermistor material formed on the insulating film, a pair of pattern electrodesformed on the insulating film with a pair of opposed electrode portionsbeing arranged so as to be opposed to each other on the thin film thermistor portion, wherein the pair of opposed electrode portions covers the entire surface of thin film thermistor portion excluding the region between the opposed electrode portions.

Temperature sensor

Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TiAlN(where 0.70&#x2266;y/(x+y)&#x2266;0.95, 0.4&#x2266;z&#x2266;0.5, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.

Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (TiCr)AlN(where 0.0&#x3c;w&#x3c;1.0, 0.70&#x2266;y/(x+y)&#x2266;0.95, 0.4&#x2266;z&#x2266;0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

Thermistor made of metal nitride material, method for producing same, and film type thermistor sensor

Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: CrAlN(0.70&#x2266;y/(x+y)&#x2266;0.95, 0.4&#x2266;z&#x2266;0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. The method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen-containing atmosphere using a Cr&#x2014;Al alloy sputtering target.

Thermistor method made of metal nitride material, method for producing same, and film type thermistor sensor

Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (TiCr)Al(NO)(where 0.0&#x3c;v&#x3c;1.0, 0.70&#x2266;y/(x+y)&#x2266;0.95, 0.45&#x2266;z&#x2266;0.55, 0&#x3c;w&#x2266;0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TiAl(NO)(where 0.70&#x2266;y/(x+y)&#x2266;0.95, 0.45&#x2266;z&#x2266;0.55, 0&#x3c;w&#x2266;0.35, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.

Metal nitride material for thermistor, method for producing same, and film thermistor sensor

The temperature sensor is provided with a pair of lead frames, a sensor portion connected to the pair of lead frames, and an insulating holding portion which is fixed to the pair of lead frames and holds the lead frames. The sensor portion is provided with an insulating film; a thin film thermistor portion formed as a pattern on the surface of the insulating film with a thermistor material; a pair of interdigitated electrodes formed as patterns having multiple comb portions and facing each other on the thin film thermistor portion; and a pair of pattern electrodes connected to the pair of interdigitated electrodes and formed as patterns on the surface of the insulating film. The pair of lead frames is extended and adhered to the surface of the insulating film disposing the thin film thermistor portion therebetween and is connected to the pair of pattern electrodes.

Provided are a metal nitride material for a thermistor, which has a high heat resistance and a high reliability and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: VAl(NO)(where 0.70&#x2266;y/(x+y)&#x2266;0.98, 0.45&#x2266;z&#x2266;0.55, 0&#x3c;w&#x2266;0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. The method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using a V&#x2014;Al alloy sputtering target.

Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: CrAl(NO)(where 0.70&#x2266;y/(x+y)&#x2266;0.95, 0.45&#x2266;z&#x2266;0.55, 0&#x3c;w&#x2266;0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

A composite soft magnetic material having low magnetostriction and high magnetic flux density contains: pure iron-based composite soft magnetic powder particles that are subjected to an insulating treatment by a Mg-containing insulating film or a phosphate film; and Fe&#x2014;Si alloy powder particles including 11%-16% by mass of Si. A ratio of an amount of the Fe&#x2014;Si alloy powder particles to a total amount is in a range of 10%-60% by mass. A method for producing the composite soft magnetic material comprises the steps of: mixing a pure iron-based composite soft magnetic powder, and the Fe&#x2014;Si alloy powder in such a manner that a ratio of the Fe&#x2014;Si alloy powder to a total amount is in a range of 10%-60%; subjecting a resultant mixture to compression molding; and subjecting a resultant molded body to a baking treatment in a non-oxidizing atmosphere.

Composite soft magnetic material having low magnetic strain and high magnetic flux density, method for producing same, and electromagnetic circuit component

Provided are a metal nitride material for a thermistor, which has a high heat resistance and a high reliability and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (MV)Al(NO)(where 0.0&#x3c;v&#x3c;1.0, 0.70&#x2266;y/(x+y)&#x2266;0.98, 0.45&#x2266;z&#x2266;0.55, 0&#x3c;w&#x2266;0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase, and 'M' is one or two elements selected from Ti and Cr. The method includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using an M-V&#x2014;Al alloy sputtering target, wherein 'M' is one or two elements selected from Ti and Cr.

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Asaka, Japan

Hiroshi Tanaka