Matsushita Electric Industrial Co., Ltd.

Mitsubishi Denki Kabushiki Kaisha

Ryoden Semiconductor System Engineering Corporation

Other

Renesas Technology Corp.

Hitachi, Ltd.

Harima Chemicals, Incorporated

Hiroshi Tanaka

Seiji Muranaka

Toshihiko Nagai

Eiji Yamauchi

Tetsuo Ishiwata

Yasuhiro Asaoka

Nobuaki Doi

Naoki Yokoi

Susumu Yamaguchi

Tadashi Yoshino

Hitoshi Komae

Masashi Takada

Hiroaki Ishikawa

Toshiaki Ohmori

Itaru Kanno

Takanobu Tsunoda

Masashi Omori

Ken Henmi

Manabu Kawabe

Keigo Obata

Takao Takeuchi

Bryan Atwood

Kazuki Ikeda

Hisao Irie

Tetsuroo Honmura

Shuzo Hitotsumachi

Naoya Inoue

There is provided at least one processor block including a plurality of load store interfaces (), a plurality of memory banks (), an input/output port having at least one of an input port () and an output port (), and a crossbar switch (), and the crossbar switch connects the load store interface, the memory bank and the input/output port to each other and the load store interface constitutes a data processor in order to control a data transfer to the memory bank. Consequently, there is implemented a data processor having a high transfer throughput and a flexibility and efficiently treating stream data.

Data processor with internal memory structure for processing stream data

To realize a software radio processing with a reduced circuit area by hardware and software which can process transmission and reception, or synchronization and demodulation in time division. There are provided a circuit DRC that can dynamically change a configuration with a structure that can change the configuration at a high speed, a general processor, and an interface for connection with an external device such as an AD converter or a DA converter. Software radio is realized by using a software radio chip that conducts plural different processing such as transmission and reception, or synchronization and demodulation in time division. The different processing during the radio signal processing can be conducted in time division. As a result, the software radio can be realized with a circuit of a reduced area in a software radio system that allocates regions of an FPGA to the respective processing.

Semiconductor integrated circuit and a software radio device

A semiconductor device includes a transfer channel for transferring charge generated by photoelectric conversion, an insulating film formed on the transfer channel, and a transfer electrode for applying a transfer voltage to the transfer channel via the insulating film. The insulating film has a first thickness and a second thickness that is thinner than the first thickness. The insulating film has the first thickness below both ends of the transfer electrode in a width direction of the transfer channel that is orthogonal to a charge transfer direction through the transfer channel, and the insulating film has the second thickness on a part including a center of the transfer channel in the width direction.

Semiconductor device, a manufacturing method thereof, and a camera

A charge coupled device of the present invention includes a charge transfer region layer and a gate insulation film that are formed in the stated order on a semiconductor substrate, first gate electrodes formed at predetermined spaces on the gate insulation film, and second gate electrodes arranged between the first gate electrodes with at least silicon oxide films being interposed there between. Each silicon oxide film has constricted portions where the silicon oxide film is in contact with the gate insulation film, and electric insulation films are formed on the constricted portions so as to form sidewalls. This configuration decreases the charge transfer efficiency and increases a dielectric breakdown voltage between gate electrodes. Thus, a charge coupled device having high performance and high dielectric strength is provided.

Charge coupled device producing method

A semiconductor device includes a transfer channel for transferring charge generated by photoelectric conversion, an insulating film formed on the transfer channel, and a transfer electrode for applying a transfer voltage to the transfer channel via the insulating film. The insulating film has the first thickness and a second thickness that is thinner than the first thickness. The insulating film has the first thickness below both ends of the transfer electrode in a width direction of the transfer channel that is orthogonal to a charge transfer direction through the transfer channel, and the insulating film has the second thickness on a part including a center of the transfer channel in the width direction.

According to present invention, there is provided a lead-free solder precipitating composition comprising a tin powder, and a complex of silver ions and/or copper ions and aryl phosphines, alkyl phosphine, phosphines or azoles. The solder precipitating composition can form proper lead-free solder on lands of a circuit board, without forming silver and/or copper film on the circuit board.

Solder precipitating composition

A semiconductor device producing method that can clean an edge part of a semiconductor substrate with certainty is provided. The method of producing a semiconductor device includes a step of generating ions and a step of accelerating the ions by means of an electric field and radiating an ion flow onto an edge part of a semiconductor substrate to clean the edge part of the semiconductor substrate. The semiconductor substrate is moved relative to the ion flow while maintaining a state in which the ion flow is being radiated onto the edge part. The step of generating ions includes applying a high-frequency voltage between a pair of electrodes to generate the ions between the electrodes.

Semiconductor device, method of producing a semiconductor device, and semiconductor substrate cleaning apparatus used for the production method

A charge coupled device of the present invention includes a charge transfer region layer and a gate insulation film that are formed in the stated order on a semiconductor substrate, first gate electrodes formed at predetermined spaces on the gate insulation film, and second gate electrodes arranged between the first gate electrodes with at least silicon oxide films being interposed therebetween. Each silicon oxide film has constricted portions where the silicon oxide film is in contact with the gate insulation film, and electric insulation films are formed on the constricted portions so as to form sidewalls. This configuration increases the charge transfer efficiency and increases a dielectric breakdown voltage between gate electrodes. Thus a charge coupled device having high performance and high dielectric strength is provided.

Charge coupled device and production thereof

In a water rinsing process performed after the surface of a substrate has been cleaned using a cleaning solution, a first spinning process, in which water is supplied to the surface of the substrate while the substrate is rotated at a first rotation speed, and a second spinning process, in which the substrate is rotated at a second rotation speed that is higher than the first rotation speed, are repeatedly performed alternately.

Substrate cleaning method and method for producing an electronic device

A method of fabricating a semiconductor device causing no pattern shifting of a peripheral oxide film etc. in removal of both of an antireflection film and a mask pattern and having a fine structure not implementable solely by photolithography and the semiconductor device are obtained. The method of fabricating a semiconductor device comprises steps of forming a base film of either a silicon film or a silicon compound film on a semiconductor substrate, forming a hard film of either a metal film or a metal compound film on the base film, forming a resist pattern on the hard film, dryly etching the hard film through the resist pattern serving as a mask for forming a hard pattern, dryly etching the base film through the hard pattern serving as a mask and removing the hard pattern by wet etching with a chemical solution not etching at least the base film.

Method of fabricating semiconductor device and semiconductor device

Disclosed is a method for removing Pt (or Pt&mdash;Ir) and BST contaminants on the surface edge, back, and bevel of a semiconductor wafer. A wafer on which a stacked film selected from the group of a Pt film, a Pt&mdash;Ir film, and a Ba&mdash;Sr&mdash;Ti film is formed is prepared. A chemical containing hydrochloric acid is applied only to the surface edge, back, and bevel of the wafer. The surface edge, back, and bevel of the wafer are rinsed with pure water. Further, a chemical containing hydrogen fluoride is applied. The surface edge, back, and bevel of the wafer are rinsed again with pure water.

Method and apparatus for cleaning semiconductor device and method of fabricating semiconductor device

The present invention is directed to providing an apparatus which is improved so as to remove a contamination on a substrate efficiently. This apparatus includes a jet nozzle jetting out droplets toward a substrate. A liquid supply device and a gas supply device are connected to the jet nozzle. A mixing device mixing a liquid and a gas supplied to the jet nozzle and changing the liquid into the droplets is provided in the jet nozzle.

Washing apparatus and washing method

A material to be dried, such as a semiconductor substrate during manufacturing a semiconductor device, is loaded into a process chamber fitted at a loading opening with a lid which is closed from above. The inner side wall surface of the process chamber has a first surface formed in the lower part thereof and is substantially in parallel with the inner wall surface of the lid, and a second surface extending from the upper end part of the first surface and bent outwards to face the inner wall surface of the lid. A processing solution vapor is fed through a steam supply port in the second surface into the process chamber and flowed downwardly over the material to be dried. The processing solution vapor is condensed and recovered below the material to be dried.

Stream drying process

A steam drying apparatus in which a process chamber is fitted at a loading opening with a lid which is closed from above. The inner side wall surface of the process chamber has a first surface formed in the lower part thereof and is substantially in parallel with the inner wall surface of the lid, and a second surface extending from the upper end part of the first surface and bent outwards to face the inner wall surface of the lid. The second surface is provided with a steam supply port for supplying the processing solution vapor into the process chamber. To the steam supply port is connected a steam supply means for supplying the processing solution vapor into the process chamber.

Growing community of inventors

Hyogo, Japan

Hiroshi Tanaka