Matsushita Electric Industrial Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Hiroshi Tanabe

Tomohiro Okumura

Ichiro Nakayama

Yuichiro Yamada

Hiroshi Imai

Mitsuo Saitoh

Yasushi Taniguchi

Motoi Hatanaka

Shigeyuki Yamamoto

Naoshi Yamaguchi

Tsuyoshi Nomura

Toshimichi Ishida

Michirou Yoshino

Takahiro Takisawa

Yukiya Usui

Ryuzoh Hohchin

Shigeru Sankawa, Sr

Kouji Arai

A coating apparatus includes a transport roll for transporting a base material, a slit die facing a lower surface of the base material, a coating liquid supply controller for switching on and/or off in supply of a coating liquid to the slit die, and a base material height changing device for ejecting compressed gas onto the lower surface of the base material during a specific period from a termination of the supply of the coating liquid to the slit die to a restart of the supply of the coating liquid to the slit die.

Coating apparatus with base material height changing device configured to selectively eject compressed gas

The present invention addresses the problem of providing a novel silicon substrate having a textured surface by dry-etching the surface of a silicon substrate having (111) orientation and thereby forming a texture thereon. The present invention provides a silicon substrate having (111) orientation, said silicon substrate having a textured surface that includes multiple protrusions which each comprise three slant faces and have heights of 100 to 8000 nm. This process for producing a silicon substrate includes: a step of preparing a silicon substrate having (111) orientation; and a step of blowing an etching gas onto the surface of the silicon substrate, said etching gas containing one or more gases selected from the group consisting of ClF3, XeF2, BrF3, BrF5 and NF3.

Silicon substrate having textured surface, and process for producing same

The purpose of the present invention is to obtain a finer texture for a silicon substrate having a textured surface and thereby obtain a thinner silicon substrate for a solar cell. The invention provides a silicon substrate that has a thickness of 50 [mu]m or less and substrate surface orientation (111), and that has a textured surface on which a texture has been formed. Such a silicon substrate is produced by a process comprising a step (A) for preparing a silicon substrate that preferably has a thickness of 50 [mu]m or less and substrate surface orientation (111), and a step (B) for texturing by blowing etching as comprising a fluorine-containing gas onto the surface of the prepared silicon substrate.

Silicon substrate having textured surface, solar cell having same, and method for producing same

A dry etching method and apparatus are provided which are capable of performing deep etching fabrication rapidly on a substrate of an InP-based compound semiconductor. Etching gas is fed into and exhausted from a reaction chamber so that an interior of the chamber is controlled to be under a predetermined pressure. Plasma is then generated in the reaction chamber by application of at least 13.56 MHz high-frequency power to a flat spiral discharge coil or a flat antenna that is provided so as to face an InP-based compound semiconductor substrate placed on a substrate electrode in the reaction chamber, and the substrate is etched while a density of the plasma and ion energy that reaches the substrate are controlled.

Dry etching method and apparatus

Generated heat is effectively dissipated to prevent thermal deformation of a gas ejector plate in a plasma processing apparatus which is capable of processing a substrate of large scale. A temperature controlling plate 106 and heat conductor 109 are fixedly disposed on the upper electrode-cum-gas ejector plate 105 which is provided with a multiplicity of gas ejecting apertures 105a disposed at regular intervals. The heat conductor 109 is constructed to be a latticed member for effectively conducting heat from the gas ejector plate 105 to the temperature controlling plate 106, and has a plurality of gas pressure equalizing spaces 109a defined between crossing bars of the lattice for pressuring process gas to be evenly ejected through the gas ejecting apertures 105a.

Plasma processing apparatus

A plasma CVD system has a processing chamber having a thin film forming section, and a transfer section communicating with the thin film forming section through a connecting opening. The system includes a thin film forming device, located in the thin film forming section, for producing plasma to form a thin film on a substrate at the connecting opening, a transfer device, located in the transfer section, for bringing a substrate holding member into and out of the processing chamber, and a heat transfer plate which does not project beyond the edge of the substrate when moved into abutment against a rear face of the substrate held by the substrate holding member to move the substrate from the substrate holding member towards the thin film forming section. The heat transfer plate also conducts heat to the substrate.

Plasma CVD system

Growing community of inventors

Nara, Japan

Hiroshi Tanabe