Kobe Steel, Ltd.

Kabushiki Kaisha Kobe Seiko Sho

Teikoku Piston Ring Co., Ltd.

Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)

Hiroshi Tamagaki

Toshimitsu Kohara

Yoshimitsu Ikari

Tadao Okimoto

Hirofumi Fujii

Hiroshi Kawaguchi

Nobuyuki Yamashita

Shoji Tanaka

Hiroto Fukutome

Koji Hanaguri

Satomichi Miyazaki

Toshiki Segawa

Katsuhiko Shimojima

Takeshi Suzuki

Naoki Ohba

Kenji Yamamoto

Toshiki Sato

Yoichi Inoue

Takeshi Sakurai

Koichiro Akari

Kunihiko Tsuji

Homare Nomura

Hideki Yutaka

Asuka Nagamine

Toshiya Kido

Ryoji Miyamoto

Junji Haga

A glass film transfer apparatus includes a wind-off section that winds off the glass film from a roll around which the glass film is wound, a long interleaf being laminated on the glass film; a glass film transfer section that transfers the glass film which is wound off from the wind-off section and is separated from the interleaf; a take-up section that takes up the glass film transferred by the glass film transfer section in the form of roll, while laminating the long interleaf on the glass film; and an interleaf transfer section that carries out the interleaf separated from the glass film which is wound off from the wind-off section, and carries in the interleaf toward the take-up section. Furthermore, the glass film transfer apparatus includes a take-up adjusting mechanism that adjusts a take-up state of the interleaf and the glass film in the take-up section.

Glass film transfer apparatus

The present invention is to provide a deposition device capable of coping with a size change of a substrate only by replacing a magnet unit and a target material. A deposition device () of the present invention is to perform deposition onto a surface of a substrate W to be conveyed by using an evaporation source () facing a front surface of the substrate (W), and the evaporation source () has a target material (), a backing plate (), a magnet unit (), a cathode body (), and a cooling water flow passage (). The cooling water flow passage () is a space formed by separating the magnet unit () and the backing plate (), and the cooling water can be distributed through this space. As the magnet unit (), a short magnet unit can be arranged in correspondence with a narrow-width substrate having narrower width than that of the substrate (W), and as the target material (), a short target material is arranged in correspondence with width of the arrange magnet unit ().

Deposition device and deposition method

In a sputter device (), power of a DC power source () is sequentially distributed and supplied in a time division pulse state to a plurality of sputter evaporation sources (). A power source () provided to each of the sputter evaporation sources () supplies continuous power to each of the sputter evaporation sources (). The sputter device () having the configuration requires no DC pulse power source to be provided to each of the sputter evaporation sources (), which reduces the device cost.

Sputter device

A plasma CVD apparatus capable of preventing unnecessary deposition on a supplying portion of a source gas so as to suppress generation of flakes, and thereby depositing a CVD coating excellent in quality is provided. This plasma CVD apparatus includes a vacuum chamber, a vacuum pump system for vacuuming an interior of the vacuum chamber, a deposition roller around which a substrate is wound, the deposition roller being provided in the vacuum chamber, a gas supplying portion for supplying the source gas to the interior of the vacuum chamber, and a plasma power supply for forming a plasma generating region in the vicinity of a surface of the deposition roller and thereby depositing a coating on the substrate. The gas supplying portion is provided in a plasma non-generating region positioned on the opposite side of the plasma generating region with respect to the deposition roller.

Plasma CVD apparatus

Provided is a substrate transport roller () capable of ensuring a broad temperature-control region on a substrate, without reducing substrate transport quality. This substrate transport roller () is provided in a film-forming device () for executing a film-forming process on the surface of a film substrate (W), transports the film substrate (W) by rotating around a center axis, and is equipped with: a center-section segment () positioned in the center section in the axial direction extending along the center axis, and having a first outer-circumferential surface; end-section segments () positioned on both sides on the outside in the axial direction of the center-section segment (), and each having a second outer-circumferential surface which contacts the substrate (W) and has a larger diameter than that of the first outer-circumferential surface; a center-section-rising-falling-temperature-medium mechanism for changing the temperature of the center-section segment (); and a both-end-section-rising-falling-temperature mechanism for changing the temperature of each of the end-section segments () independently from the center-section segment ().

Substrate transport roller

In forming alumina films on substrates by sputtering of an aluminum metal target in an oxidizing gas-containing atmosphere, film formation is carried out intermittently in a plurality of substeps while restricting a thickness of the film formed in each substep to at most 5 nm. A turntable is disposed to face a direction of sputtering of the aluminum metal target and the substrates are fixed to the turntable.

Method of producing &#x3b1; crystal structure-based alumina films

The disclosed plasma CVD apparatus () is provided with a vacuum chamber (); a pair of deposition rollers () disposed within the vacuum chamber () that are connected to both poles of an AC power supply and around which a substrate (W) is wound; a gas-supplying device () that supplies process gas containing a source gas to a deposition zone (D) which is a portion of or all of the region that is on one side of a line linking the centers of rotation of the pair of deposition rollers (); and a magnetic-field-generating device () that, by means of the AC power supply being applied to each of the deposition rollers (), forms a magnetic field that causes the source gas in a predetermined region to become plasma. The magnetic-field-generating device () causes the source gas in the region adjacent to the surface of the portion of the pair of deposition rollers () located within the deposition zone (D) to become plasma, forming a plasma region (P). The substrate (W) is wound around the pair of deposition rollers () so as to pass through the plasma region (P).

Provided is a continuous deposition apparatus wherein replacement operations of a feeding unit and a take-up unit are easily performed. The continuous deposition apparatus is provided with: a vacuum chamber (); a deposition roller (); evaporation sources (LLR) which supply a deposition material to a film substrate from the side of the film substrate which is wound on the deposition roller and on which a coating is to be deposited; a feeding unit () which supplies the film substrate to the deposition roller (); and a take-up unit () which takes up the film substrate after the coating is deposited thereon. The vacuum chamber () is provided with: an evaporation source opening for carrying out and carrying in the evaporation sources; evaporation source door sections (L,R) which open and close the evaporation source opening; another opening provided for the substrate on which the coating is to be deposited, besides the evaporation source opening, for the purpose of carrying out and carrying in the feeding unit () and the take-up unit (); and door sections (L,R) which are provided for the substrate and open and close the opening provided for the substrate.

Continuous deposition apparatus

The present invention provides a process for producing an alumina coating comprised mainly of &#x3b1; crystal structure on a base material.

Process for producing alumina coating composed mainly of &#x3b1;-type crystal structure

Provided is a protective alumina film mainly containing alumina in the &#x3b1;-crystal structure and fine crystal grains in which one or more regions containing additionally an element other than aluminum formed along the planes in the direction almost perpendicular to the thickness direction of the protective film are present intermittently in the thickness direction inside the protective film.

Protective alumina film and production method thereof

The plasma CVD apparatus of the present invention comprises a pair of deposition rollsanddisposed oppositely in parallel so that a substrate S wound thereon faces each other; a magnetic field generating memberandprovided inside each of the deposition rollsand, which generates a magnetic field so as to converge plasma to the vicinity of a roll surface thereof facing a spacebetween the deposition rolls; a plasma power sourcewith polarity alternately reversing between one electrode and the other electrode; a gas supply pipefor supplying a film-forming gas to the space; and evacuation means for evacuating the space. One electrode of the plasma power sourceis connected to one deposition roll, and the other electrode thereof to the other deposition roll

Continuous film forming apparatus

An arc ion plating apparatus comprises a vacuum chamber, a rotary table for moving a substrate within the vacuum chamber vertically relative to its height direction, an arc evaporation source for bombardment for cleaning the surface of the substrate with metal ions, and an arc evaporation source for deposition group for depositing metal ions on the surface of the substrate. The arc evaporation source for deposition group is composed of a plurality of evaporation sources arranged so as to be opposite to the substrate set on the rotary table, and the arc evaporation source for bombardment is arranged so as to be opposite to the substrate, and formed so that its length in the height direction of the vacuum chamber is equal to the length between the upper and lower ends of the arc evaporation source for deposition group. According to such a structure, over temperature rise or abnormal discharge is hardly caused in the substrate at the time of bombardment, and process controllability is consequently enhanced.

Arc ion plating apparatus

The present invention provides a method for reactive sputtering in which a reactive sputtering apparatus including a sputtering vaporization sourceprovided with a metal target disposed in a vacuum chamber, a sputtering power sourceto drive the sputtering vaporization source, and an introduction mechanismto introduce an inert gas for sputtering and a reaction gas for forming a compound with sputtered metal into the vacuum chamberis used, and reactive sputtering film formation is performed on a substratedisposed in the above-described vacuum chamber, wherein the method includes the steps of performing constant-voltage control to control the voltage of the above-described sputtering power sourceat a target voltage Vs and, in addition, performing target voltage control at a control speed lower than the speed of the above-described constant-voltage control, the target voltage control operating the above-described target voltage Vs in order that the spectrum of plasma emission generated forward of the above-described sputtering vaporization sourcebecomes a target value.

Reactive sputtering method and device

For forming alumina films on substrates by sputtering of an aluminum metal target in an oxidizing gas-containing atmosphere, a method of producing &#x3b1; crystal structure-based alumina films efficiently includes as an early film formation, forming films under conditions suited for formation of &#x3b1; crystal structure alumina. For example the forming forms films of &#x3b1;crystal structure alumina in a poisoning mode discharge condition only in an early stage of film formation.

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Takasago, Japan

Hiroshi Tamagaki