Fujitsu Microelectronics Limited

Fujitsu Corporation

Fujitsu Semiconductor Limited

Hiroshi Takita

Hiromi Hoshino

Takashi Maruyama

Kozo Ogino

Masaaki Miyajima

A method for preparing data for exposure includes forming a first plurality of rectangular patterns from a reticle preparing rule; lining an object pattern for performing reticle exposure with the first rectangular patterns, and extracting a second plurality of rectangular patterns, disposed in an N&#xd7;N matrix, from the first plurality of rectangular patterns in the object pattern; and performing a violation detecting treatment and a correcting treatment of the pattern width and the pattern distance of the reticle exposure pattern on the basis of the distance between the second plurality of rectangular patterns.

Preparing data for hybrid exposure using both electron beam exposure and reticle exposure in lithographic process

A layout determination method determines a layout of semiconductor devices that are to be created on a substrate by carrying out an exposure process. The layout determination method determines a number of semiconductor devices to be created on one substrate, based on exposure data of the semiconductor devices, a time limit of delivery of the semiconductor devices and a number of substrates to be used for production of the semiconductor devices, obtains coordinates of semiconductor devices arrangeable on the substrate, based on the exposure data, and determines the layout of the semiconductor devices to be created on the substrate, based on the exposure data, the number of semiconductor devices and the coordinates of the semiconductor devices.

Layout determination method, method of manufacturing semiconductor devices, and computer readable program

First, electron beam exposure data identifiable for each type of pattern of a semiconductor device is inputted (S). Then, electron beam exposure data on a first type of pattern is not corrected, while electron beam exposure data on a second type of pattern is corrected (S). The first type of pattern is, for example, a dummy pattern having no influence on the function of the semiconductor device. The second type of pattern is for example, a normal pattern having an influence on the function of the semiconductor device.

Method for correcting electron beam exposure data

A block mask making method is provided that can improve throughput of a process for exposing a semiconductor device having a plurality of layers. Steps S -S respectively extract blocks including basic figures included in layers of IC data. For example, step S extracts a block from a wiring layer, and step S extracts a block from a gate layer, step S extracting a block from a hole layer. In step S , if the number of blocks extracted by steps S -S is larger than the number of blocks that can be arranged on the block mask, blocks that are used frequently are selected preferentially. Step S determines arrangement of a block having a smaller exposure pattern closer to a center of the block mask. Data in which arrangement is fixed is output as block mask making data.

Growing community of inventors

Kawasaki, Japan

Hiroshi Takita