Shin-etsu Handotai Co., Ltd.

Denso Corporation

Hiroshi Takeno

Nobuhiko Noto

Ken Aihara

Tsuyoshi Ohtsuki

Yoshinori Hayamizu

Norihiro Kobayashi

Kazuhiko Yoshida

Makoto Iida

Masaro Tamatsuka

Tohru Ishizuka

Wei Feig Qu

Masao Matsumine

Katsuyoshi Suzuki

Masanori Kimura

Hiroji Aga

Ryoji Hoshi

Isao Yokokawa

Masahiro Sakurada

Takao Takenaka

Mitsutaka Katada

Takatoshi Nagoya

Takeshi Kobayashi

Tatsuo Enomoto

Masayuki Imai

Katsuhiko Miki

Koji Ebara

Tadashi Nakasugi

Yutaka Shiga

Hiroshi Ohtsuki

Hideki Shigeno

Satoshi Ushio

A method produces a semiconductor apparatus for a quantum computer. The apparatus includes: a semiconductor substrate; a quantum computer device formed on the semiconductor substrate; and a peripheral circuit formed on the semiconductor substrate and connected to the quantum computer device. The apparatus is to be used as a quantum computer. The method includes: a step of forming the quantum computer device and the peripheral circuit on the semiconductor substrate; and a step of deactivating a carrier in the semiconductor substrate by irradiation of a particle beam to at least a formation part for the quantum computer device and a formation part for the peripheral circuit in the semiconductor substrate. The method for producing a semiconductor apparatus for a quantum computer can produce a semiconductor apparatus for a quantum computer having excellent 3HD characteristics.

Method for producing semiconductor apparatus for quantum computer

A method for producing a semiconductor apparatus capable of producing a semiconductor apparatus with improved transmission loss characteristic using an interposer substrate in which semiconductor devices formed on a silicon single crystal substrate are connected to each other by a through electrode, the method including: a step of providing the silicon single crystal substrate containing a dopant; a step of forming the semiconductor devices and the through electrode on the silicon single crystal substrate to obtain the interposer substrate; and a step of irradiating a particle beam to at least around a formation part for the through electrode on the silicon single crystal substrate to deactivate the dopant in a region around the formation part for the through electrode.

Method for producing semiconductor apparatus and semiconductor apparatus

A method for manufacturing a semiconductor device, including forming a Fin structure on a semiconductor silicon substrate, performing ion implantation into the Fin structure, and subsequently performing recovery heat treatment on the semiconductor silicon substrate to recrystallize silicon of the Fin structure, wherein the Fin structure is processed so as not to have an end face of a {111} plane of the semiconductor silicon onto a sidewall of the Fin structure to be formed. It also includes a method for manufacturing a semiconductor device that is capable of preventing a defect from being introduced into a Fin structure when the Fin structure is subjected to ion implantation and recovery heat treatment.

Method for manufacturing semiconductor device and method for evaluating semiconductor device

A method for manufacturing a silicon wafer having a denuded zone in a surface layer by performing a heat treatment to a silicon wafer, including: a step A, performing a first rapid heat treatment of 0.01 msec or more and 100 msec or less to an upper surface layer alone of the silicon wafer to be treated at 1300&#xb0; C. or more and a silicon melting point or less by using a first heat source which heats the silicon wafer to be treated from above; and a step B, holding the silicon wafer to be treated at 1100&#xb0; C. or more and less than 1300&#xb0; C. for one second or more and 100 seconds or less by a second rapid heat treatment using a second heat source which heats the silicon wafer to be heated, and decreasing the temperature at a falling rate of 30&#xb0; C./sec or more and 150&#xb0; C./sec or less.

Method for manufacturing silicon wafer

The present invention provides a method for evaluating a semiconductor substrate subjected to a defect recovery heat treatment to recover a crystal defect in the semiconductor substrate having the crystal defect, flash lamp annealing is performed as the defect recovery heat treatment, and the method includes steps of measuring the crystal defect in the semiconductor substrate, which is being recovered, by controlling treatment conditions for the flash lamp annealing and analyzing a recovery mechanism of the crystal defect on the basis of a result of the measurement. Consequently, the method for evaluating a semiconductor substrate which enables evaluating a recovery process of the crystal defect is provided.

Method for evaluating semiconductor substrate

Provided is a method of measuring a recombination lifetime of a silicon substrate, which is capable of evaluating metal contamination and crystal defects in a silicon substrate manufacturing process and a device manufacturing process with high accuracy. The method includes: measuring a recombination lifetime of a silicon substrate after subjecting a surface of the silicon substrate to chemical passivation processing; and performing ultraviolet protection processing of protecting at least the silicon substrate from ultraviolet rays during a period from the chemical passivation processing to a time when the measurement of the recombination lifetime is completed.

Method for measuring recombination lifetime of silicon substrate

The present invention includes a method for manufacturing a silicon epitaxial wafer having a silicon homoepitaxial layer formed on a surface of a silicon single crystal wafer, including the steps of: preparing the silicon single crystal wafer such that a plane orientation of the silicon single crystal wafer is tilted at an angle in the range from 0.1&#xb0; to 8&#xb0; in a &#x3c;112&#x3e; direction from a {110} plane; and growing the silicon homoepitaxial layer on the prepared silicon single crystal wafer. According to the present invention, a silicon epitaxial wafer using the {110} substrate with improved surface quality, such as Haze and surface roughness and a method for manufacturing the silicon epitaxial wafer are provided.

Silicon epitaxial wafer and method for manufacturing the same

In a SOI structure semiconductor device using a SOI substrate, a lattice distortion layer is formed by implanting Ar ions into a silicon substrate as an active layer. The lattice distortion layer is capable of serving as a gettering site. The dose amount of Ar ions is adjusted in such a manner that tensile stress in the lattice distortion layer is equal to or greater than 11 MPa and equal to or less than 27 MPa. Thus, the lattice distortion layer can prevent occurrence of a leakage current while serving as the gettering site.

SOI (silicon on insulator) structure semiconductor device and method of manufacturing the same

The present invention provides a method for manufacturing an SOI substrate including at least: an oxygen ion implantation step of ion-implanting oxygen ions from one main surface of a single-crystal silicon substrate to form an oxygen ion implanted layer; and a heat treatment step of performing a heat treatment with respect to the single-crystal silicon substrate having the oxygen ion implanted layer formed therein to change the oxygen ion implanted layer into a buried oxide film layer, wherein acceleration energy for the oxygen ion implantation is previously determined from a thickness of the buried oxide film layer to be obtained, and the oxygen ion implantation step is carried out with the determined acceleration energy to manufacture the SOI substrate. Thereby, it is possible to provide an SOI substrate manufacturing method that enables efficiently manufacturing an SOI substrate having a continuous and uniform thin buried oxide film layer.

Method for manufacturing SOI substrate

The present invention is a method for producing an SOI wafer comprising at least a step of forming an ion-implanted damaged layer by ion-implanting a neutral element electrically inactive in silicon from one surface of the base wafer or the bond wafer, in which ion-implanting in the step of forming the ion-implanted damaged layer is performed at a dosage of 1&#xd7;10atoms/cmor more and less than 1&#xd7;10atoms/cm. As a result, there may be provided a method for producing an SOI wafer having sufficient gettering ability while the suppression of leak failure, degradation of oxide dielectric breakdown voltage or the like is provided.

Method for producing SOI wafer

The present invention provides a method for manufacturing an SOI wafer, including: a step of preparing a base wafer consisting of a psilicon single crystal wafer and a bond wafer consisting of a silicon single crystal wafer containing a dopant at a lower concentration than that in the base wafer; a step of forming a silicon oxide film on an entire surface of the base wafer based on thermal oxidation; a step of bonding the bond wafer to the base wafer through the silicon oxide film; and a step of reducing a thickness of the bond wafer to form an SOI layer, wherein a step of forming a CVD insulator film on a surface on an opposite side of a bonding surface of the base wafer is provided before the thermal oxidation step for the base wafer. As a result, it is possible to provide the method for manufacturing an SOI wafer which can easily prevent the p-type dopant contained in the base wafer from outwardly diffusing from the surface on the opposite side of the bonding surface of the base wafer due to a high-temperature heat treatment, suppress this dopant from being mixed into the SOI layer, and reduce warpage.

Method for manufacturing soi wafer

The present invention relates to a method for producing an SOI wafer, having at least a step of a bonding heat treatment for increasing bonding strength by heat-treating a bonded wafer obtained by bonding a base wafer and a bond wafer, in which argon is ion-implanted from a surface of either the base wafer or the bond wafer at a dosage of 1&#xd7;10atoms/cmor more at least before the bonding step, the surface ion-implanted with argon is used as a bonding surface in the bonding step, and an increase rate of temperature to a treatment temperature of the bonding heat treatment is 5&#xb0; C./minute or higher. Thus the present invention provides a method for producing an SOI wafer facilitating the efficient production of an SOI wafer having in the neighborhood of a buried insulator layer thereof a polycrystalline silicon layer uniform in thickness introduced and having high gettering ability toward metal contaminations in the SOI layer by a simple and low-cost method.

A method of manufacturing an SOI wafer includes a bonding step, a thinning and a bonding annealing step. Assuming refractive index nof SiOas 1.5, refractive index nof Si as 3.5, and optical thickness tof the silicon oxide filmand the SOI layerin the infrared wavelength region as t=n&#xd7;t+n&#xd7;t, the thickness tof the silicon oxide filmand thickness tof the SOI layer so as to satisfy a relation of 0.1&#x3bb;&#x3c;t&#x3c;2&#x3bb;, and so as to make (tn)/(t&#xd7;n) fall within 0.2 to 3. By nuclei killer annealing carried out before the bonding annealing, density of formation of oxygen precipitate in the base wafer after the bonding annealing is adjusted to less than 1&#xd7;10/cm. This configuration successfully provides a method of manufacturing the SOI wafer having the thin silicon oxide film and the SOI layer, and being less likely to cause warping.

Method of manufacturing SOI wafer and thus-manufactured SOI wafer

The present invention provides a method for manufacturing an SOI substrate by which an oxygen ion is implanted from at least one of main surfaces of a single-crystal silicon substrate to form an oxygen-ion-implanted layer and then an oxide film-forming heat treatment that changes the formed oxygen-ion-implanted layer into a buried oxide film layer is performed with respect to the single-crystal silicon substrate to manufacture the SOI substrate, the method comprising: implanting a neutral element ion having a dose amount of 1&#xd7;10atoms/cmor above and less than 1&#xd7;10atoms/cminto a back surface to form an ion-implanted damage layer after performing the oxide film-forming heat treatment; and gettering a metal impurity in the ion-implanted damage layer by a subsequent heat treatment to enable reducing a metal impurity concentration on a front surface side. Thereby, there is provided a method for manufacturing an SOI substrate having a gettering layer on a back surface thereof in a simple process at a low cost.

According to the present invention, there is provided a method for manufacturing an SOI substrate based on a bonding method, comprising at least: forming a silicon oxide film on a surface of at least one of a single-crystal silicon substrate that becomes an SOI layer and a single-crystal silicon substrate that becomes a support substrate; bonding the single-crystal silicon substrate that becomes the SOI layer to the single-crystal silicon substrate that becomes the support substrate through the silicon oxide film; and performing a heat treatment for holding at a temperature falling within the range of at least 950&#xb0; C. to 1100&#xb0; C. and then carrying out a heat treatment at a temperature higher than 1100&#xb0; C. when effecting a bonding heat treatment for increasing bonding strength. As a result, there are provided the method for manufacturing an SOI substrate that can efficiently manufacture an SOI substrate having an excellent gettering ability with respect to metal contamination in an SOI layer, and the SOI substrate.

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Annaka, Japan

Hiroshi Takeno