Tdk Corporation

Hiroshi Takasaki

Hitoshi Saita

Hideki Hirata

Masahiro Hiraoka

Tatsuya Kato

Masanori Kosuda

Hideki Ishizaki

Hiroshi Shingai

Hiroyasu Inoue

Kenichi Yoshida

Hajime Utsunomiya

Mamoru Usami

Isamu Kuribayashi

Masanori Shibahara

Yukio Kawaguchi

Masaki Sobu

Yasuhiro Takagi

Suguru Andoh

Hiroshi Shinngai

Tsutomu Tsutsumi

Jajime Utsunomiya

Disclosed herein is a thin film capacitor that includes a capacitive insulating film having first and second surfaces opposite to each other, a first capacitive electrode covering the first surface of the capacitive insulating film, and a second capacitive electrode covering the second surface of the capacitive insulating film and including a plurality of capacitor areas divided by a slit and a plurality of fuse areas connecting two of adjacent capacitor areas. The second capacitive electrode has a structure in which a plurality of conductor films including a first conductor film and a second conductor film lower in electrical resistivity than the first conductor film are laminated.

Thin film capacitor

A thin film capacitor comprises a first electrode, a second electrode, and a dielectric substance disposed between the first electrodeand the second electrode. The second electrode has a first metallic layer, an intermediate layer, and a second metallic layer in sequence in this order from the side of the dielectric substance. The first metallic layer contains a metal element Mas a main component, and the second metallic layer contains a metal element Mdifferent from the metal element Mas a main component. The intermediate layer has one or more laminate structures each having a second metal sublayer containing the metal element Mas a main component and a first metal sublayer containing the metal element Mas a main component in sequence from the side of the first metallic layer toward the side of the second metallic layer.

Thin film capacitor, and method of producing thin film capacitor

A thin film capacitor includes a first electrode layer (), a dielectric layer () stacked on the first electrode layer (), and a second electrode layer () stacked on the dielectric layer (), wherein the dielectric layer () includes a layered void aggregation region () which extends in a direction orthogonal to a stacking direction.

A thin-film capacitor includes a capacitor section in which electrode layers and dielectric layers are alternately stacked and which includes a hole portion that extends to the electrode layer. In a cross-section which is perpendicular to a stacking surface of the capacitor section and which passes through the hole portion, a side surface of the hole portion extends along a reference line extending in a direction intersecting the stacking surface, the dielectric layer extends up to the reference line toward the hole portion, and a gap is formed between the side surface of the pair electrode layer and the reference line.

Thin-film capacitor

The present invention aims at providing a sputtering target for making an optical medium whose reflective layer is mainly composed of Ag and capable of attaining an optical medium which is excellent in surface smoothness and can sufficiently suppress noise and jitter, a method of making the same, an optical medium, and a method of making the same. The present invention provides a sputtering target for making an optical medium comprising 0.1 to 2 at % of one or two elements selected from the group consisting of Ta and Nb, 0.1 to 1 at % of Al, and the balance constituted by Ag and unavoidable impurities; and an optical medium comprising a reflective layer having this composition on a substrate.

Sputtering target for making optical medium, method of making same, optical medium, and method of making same

A next-generation optical recording medium has two or more information layers which include a translucent information layer. The translucent information layer has a recording film and an interface layer, provided adjacent to the recording film on the side of the light incident surface. The recording film is made of a phase change material having SbTeGeelements and elemental ratios. Y satisfies 5&#x2266;y&#x2266;15 and z satisfies 5&#x2266;z&#x2266;15. When In having an elemental ratio of a is further added and x+y+z+a=100 holds, a satisfies 4&#x2266;a&#x2266;15. The interface layer comprises of ZrO&#x2014;CrOfilm thickness of which is in a range of from 2 nm to 10 nm. When ZrO:CrO&#x2550;C:D (mol %), the compositional ratios ZrOand CrOin the ZrO&#x2014;CrOfilm, holds, the C satisfies 20&#x2266;C&#x2266;90, and the D satisfies 10&#x2266;D&#x2266;80, and the C and the D satisfy C+D=100. The ZrOis stabilized ZrOwhich contains YO, when ZrO:YO=(100&#x2212;X):X (mol %), the compositional ratios ZrOand YOin the stabilized ZrO, holds, the X satisfies 2&#x2266;X&#x2266;10.

Optical recording medium and recording film material

An optical recording medium is provided which includes two or more information layers in which an Sb-based eutectic material is used as the material for a recording film of a translucent information layer. There is also provided a recording film material for the optical recording medium. The translucent information layer is configured to include a recording film formed of a phase change material SbGeIncontaining Sb, Ge, and In in an atomic ratio of x:y:z, where 5&#x2266;y&#x2266;15 and 4&#x2266;z&#x2266;15 are satisfied. The recording film further includes Te in an atomic ratio of a, provided that x+y+z+a=100 and 4&#x2266;a&#x2266;15 are satisfied. An interface layer formed of a ZrO&#x2014;CrOfilm having a thickness of 2 nm or more and 10 nm or less is provided on the laser beam incident side of the recording film. When the compositional ratio of the ZrO&#x2014;CrOfilm is given by ZrO:CrO=B:C (mol %), 20&#x2266;B&#x2266;90, 10&#x2266;C&#x2266;80, and B+C=100 are satisfied.

A rewritable phase-change optical recording medium is provided, which includes a substrate, a first information layer, a spacer layer, a second information layer, and a cover layer. The second information layer includes a recording film containing Sb as a main component and V or V and In as second components. When an amorphous mark formed in the recording film is irradiated with a reproduction beam, crystallization of the amorphous mark occurs only in a central portion in the width direction of the amorphous mark. The width direction is orthogonal to the scanning direction of the laser beam. The recording film is formed of a material that exhibits a change in degree of modulation of 5% or less when recorded information is repeatedly reproduced. The change in degree of modulation is a change from when the number of times of reproduction is 100,000 to when it is 400,000.

Rewritable phase-change optical recording medium

An optical recording medium includes a support substrate, a light transmission layer whose one surface constitutes a light incidence plane through which a laser beam is projected, an information recording layer formed between the support substrate and the light transmission layer, a reflective layer formed between the information recording layer and the support substrate, a water proof layer formed between the reflective layer and the support substrate and containing a mixture of ZnS and SiOas a primary component, and a corrosion resistant layer formed between the water proof layer and the reflective layer. According to the thus constituted optical recording medium, it is possible to effectively prevent a reflective layer from being corroded and has excellent storage reliability.

Optical recording medium

The optical recording medium of the invention comprises a recording layer and at least one mixed dielectric layer. The mixed dielectric layer contains cerium oxide and an additive compound. The additive compound is at least one compound selected from among aluminum oxide, chromium oxide, iron oxide, manganese oxide, niobium oxide, magnesium oxide, zinc oxide, titanium oxide, yttrium oxide, tantalum oxide, antimony oxide, zirconium oxide, bismuth oxide and magnesium fluoride. The optical recording medium has a high storage reliability and satisfactory recording/reading characteristics.

A disc-shaped substrate for a disc-shaped optical recording medium is accurately and stably positioned and held during a sputtering process. A non-sputtering surface of the disc-shaped substrate opposite to a sputtering surface has a circular recess formed at a center thereof. A carrier, on which the disc-shaped substrate is supported during the sputtering process, has a projective member for fitting into the circular recess to accurately position and hold the disc-shaped substrate during the sputtering process.

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Tokyo, Japan

Hiroshi Takasaki