Jx Nippon Mining & Metals Corporation

Jx Metals Corporation

Nikko Materials Company, Limited

Jx Advanced Metals Corporation

Hiroshi Takamura

Ryo Suzuki

Ryosuke Sakashita

Atsushi Nara

Shuhei Murata

Satoyasu Narita

Yosuke Endo

Naoki Ise

Daisuke Takagaki

A potassium sodium niobate sputtering target having a relative density of 95% or higher. A method of producing a potassium sodium niobate sputtering target, including the steps of mixing a NbOpowder, a KCopowder, and a NaCopowder, pulverizing the mixed powder to achieve a grain size dof 100 μm or less, and performing hot press sintering to the obtained pulverized powder in an inert gas or vacuum atmosphere under conditions of a temperature of 900° C. or higher and less than 1150° C., and a load of 150 to 400 kgf/cm. A high density potassium sodium niobate sputtering target capable of industrially depositing potassium sodium niobate films via the sputtering method is provided.

Potassium sodium niobate sputtering target and production method thereof

A potassium sodium niobate sputtering target having a relative density of 95% or higher. A method of producing a potassium sodium niobate sputtering target, including the steps of mixing a NbOpowder, a KCopowder, and a NaCopowder, pulverizing the mixed powder to achieve a grain size dof 100 μm or less, and performing hot press sintering to the obtained pulverized powder in an inert gas or vacuum atmosphere under conditions of a temperature of 900° C. or higher and less than 1150° C., and a load of 150 to 400 kgf/cm. The present invention aims to provide a high density potassium sodium niobate sputtering target capable of industrially depositing potassium sodium niobate films via the sputtering method.

Provided is a multi-shank heater to be mounted on a support substrate, wherein, with a normal direction relative to the support substrate, which is a direction from the heater side toward the support substrate side, as a basis, the multi-shank heater has U-shaped pieces in which an angle &#x3b8; of a planar direction of the U-shaped pieces, which is a direction from the heater side toward the support substrate side, is &#xb1;10&#xb0; or more and &#xb1;60&#xb0; or less. An object of the present invention is to provide a multi-shank heater capable of considerably improving the energy output even when the U-shaped pieces are arranged in a high density and have the same pitch.

Multi-shank heater

A sputtering target-backing plate assembly obtained by bonding a sputtering target and a backing plate using a brazing material, wherein a braze bonding layer which bonds the sputtering target and the backing plate contains a material having thermal conductivity that is higher than that of the brazing material in an amount of 5 vol % or more and 50 vol % or less, and a thickness of the braze bonding layer is 100 &#x3bc;m or more and 700 &#x3bc;m or less. An object is to prevent the seepage of the brazing material while maintaining the thickness of the braze bonding layer.

Sputtering target-backing plate assembly

A sputtering target-backing plate assembly in which a Si sputtering target is bonded to a backing plate by way of a brazing material, wherein the brazing material has a melting point of 200&#xb0; C. or higher and a bonding strength of 0.16 kgf/cmor higher. An object is to provide a sputtering target-backing plate assembly in which a Si sputtering target is bonded to a backing plate by way of a brazing material, wherein the sputtering target-backing plate assembly has a high bonding strength and is free from separation even under high temperature sputtering conditions such as during high power sputtering.

Sputtering target-backing plate assembly and production method thereof

A sputtering target formed from monocrystalline silicon is provided, wherein a sputter surface of the sputtering target is a plane inclined at an angle that exceeds 1&#xb0; and is less than 10&#xb0; from a {100} plane. The sputtering target formed from monocrystalline silicon provides a sputtering target which yields superior mechanical strength as well as exhibiting a sputter performance which is equivalent to that of a {100} plane. From a different perspective, in addition to superior mechanical strength, the monocrystalline silicon sputtering target yields superior particle characteristics, sputtering rate, crack resistance, surface shape uniformity and other characteristics.

Monocrystalline silicon sputtering target

Provided is a backing plate obtaining by bonding an anticorrosive metal and Mo or a Mo alloy, wherein the backing plate comprises, on a surface of the Mo or Mo alloy backing plate to be cooled (cooling surface side), a layer having a thickness corresponding to 1/40 to &#x215b; of a total thickness of the backing plate and formed from an anticorrosive metal obtained by bonding one or more types of metals selected from among Cu, Al and Ti, or an alloy thereof. Additionally provided is a sputtering target-backing plate assembly obtained by bonding the foregoing Mo or Mo alloy backing plate and a target formed from a low thermal expansion material. Particularly in semiconductor applications, reductions in size have progressed and control of particles during sputtering has become stricter. The present invention aims to resolve the problem of warpage of sputtering targets formed from low thermal expansion materials and problems occurring with respect to the anticorrosive properties of Mo or Mo alloy backing plates.

Backing plate obtained by diffusion-bonding anticorrosive metal and Mo or Mo alloy, and sputtering target-backing plate assembly provided with said backing plate

Provided is a polycrystalline silicon target produced by a melting method. In the polycrystalline silicon sputtering target, the average amount of nitride or carbide grains having a size of 100 &#x3bc;m or more for samples of 100&#xd7;100 mm taken from an arbitrary plane of the target is less than three. Also provided is a method of producing a polycrystalline silicon sputtering target. The method is characterized in that a silicon ingot is produced by melting silicon as a raw material with an electron beam and pouring the molten silicon into a crucible heated at 90&#xb0; C. or more, and the resulting ingot is machined into a target. The present invention has focused on polycrystalline silicon produced by a melting method, and an object of the present invention is to provide a polycrystalline silicon sputtering target having high quality by reducing the presence of silicon nitride and silicon carbide and to provide a polycrystalline silicon sputtering target having a high bending strength by devising the production process.

Polycrystalline silicon sputtering target

A polycrystalline silicon wafer produced based on a melting method and having an outer diameter of 450 mm or more, wherein a depth of scratches on the polycrystalline silicon wafer is 10 &#x3bc;m or less. A polycrystalline silicon wafer produced based on a melting method and having an outer diameter of 450 mm or more, wherein a maximum number of scratches having a width of 40 &#x3bc;m or more and 100 &#x3bc;m or less and a depth of more than 10 &#x3bc;m and 40 &#x3bc;m or less formed on the polycrystalline silicon wafer is one or less per section when the overall polycrystalline silicon wafer is divided into 100 mm-square sections, and a depth of remaining scratches is 10 &#x3bc;m or less. Provided is a large polycrystalline silicon wafer, particularly a silicon wafer having a wafer size in which the outer diameter is 450 mm or more, in which a small number of scratches are generated on the wafer surface and which has mechanical properties similar to those of a monocrystalline silicon wafer.

Polycrystalline silicon wafer

Provided is a polycrystalline silicon wafer produced by a melting and unidirectional solidification method, where the polycrystalline silicon wafer has a diameter of 450 mm or more, a thickness of 900 &#x3bc;m or more, and an average crystal grain size of 5 to 50 mm, and is made up of one piece. The present invention provides a large-sized polycrystalline silicon wafer having a wafer size of 450 mm or more, of which: mechanical properties are similar to those of monocrystalline silicon wafers; the crystal size is large; the surface roughness is low; the surface has a high cleanliness; the polished surface has less unevenness by having a definite crystal orientation; and the sag value is similar to that of monocrystalline silicon wafers.

A hybrid silicon wafer which is a silicon wafer having a structure wherein monocrystalline silicon is embedded in polycrystalline silicon that is prepared by the unidirectional solidification/melting method. The longitudinal plane of crystal grains of the polycrystalline portion prepared by the unidirectional solidification/melting method is used as the wafer plane, and the monocrystalline silicon is embedded so that the longitudinal direction of the crystal grains of the polycrystalline portion forms an angle of 120&#xb0; to 150&#xb0; relative to the cleaved surface of the monocrystalline silicon. Thus provided is a hybrid silicon wafer comprising the functions of both a polycrystalline silicon wafer and a monocrystalline wafer.

Hybrid silicon wafer

Provided is a hybrid silicon wafer in which molten state polycrystalline silicon and solid state single-crystal silicon are mutually integrated, comprising fine crystals having an average crystal grain size of 8 mm or less at a polycrystalline portion within 10 mm from a boundary with a single-crystal portion. Additionally provided is a method of manufacturing a hybrid silicon wafer, wherein a columnar single-crystal silicon ingot is sent in a mold in advance, molten silicon is cast around and integrated with the single-crystal ingot to prepare an ingot complex of single-crystal silicon and polycrystalline silicon, and a wafer shape is cut out therefrom. The provided hybrid silicon wafer comprises the functions of both a polycrystalline silicon wafer and a single-crystal wafer.

Hybrid silicon wafer and method of producing the same

A hybrid silicon wafer which is a silicon wafer having a structure wherein the main plane orientation of polycrystalline silicon that is prepared by a unidirectional solidification/melting method is (311), and monocrystalline silicon is embedded in the polycrystalline silicon. The hybrid silicon wafer according to any one of claimsto, wherein the purity of the polycrystalline silicon portion excluding gas components is 6N or higher, the total amount of metal impurities is 1 wtppm or less, and, among the metal impurities, Cu, Fe, Ni, and Al are respectively 0.1 wtppm or less. Thus, a hybrid silicon wafer having the functions of both a polycrystalline silicon wafer and a monocrystalline silicon wafer is provided and the occurrence of polish bumps and macro-sized unevenness between the polycrystalline silicon and the monocrystalline silicon are prevented.

Provided is a hybrid silicon wafer made of a wafer comprised primarily of two or more types of concentric single-crystal silicon or polycrystalline silicon prepared by mutually integrating one in a molten state and another in a solid state, and having specific resistances that differ by two orders of magnitude or more. Additionally provided is a method of manufacturing a hybrid silicon wafer, wherein high specific resistance silicon or an ingot comprised primarily of silicon is disposed at a central portion or a decentered position in a crucible, a nugget or powdered silicon having a specific resistance that is lower by two orders of magnitude or more than the ingot is filled in a void part around the ingot in the crucible, the nugget or powdered silicon is selectively melted and integrated with the ingot to form a complex, and a wafer shape is cut out therefrom. The provided hybrid silicon wafer comprises the functions of both a polycrystalline silicon wafer and a single-crystal wafer, or two or more polycrystalline silicon wafers having different functions.

A MoSiarc-shaped heater formed in a continuous waveform, characterized in that U-shaped heater members having parallel parts are connected alternately to each other at the end parts, and the parallel faces of the U-shaped heater members have an angle relative to each other and an arc-shaped face with a specified curvature in a connecting direction, wherein a large number of parallel U-shaped heater members having heating parts are connected to each other and welded so that the heater can have a generally arc-shaped curved surface to install the heater onto the inner wall of a heating furnace, whereby the arc heater having an excellent joining strength and capable of being manufactured stably, and a method and a device for manufactured the heater can be provided.

Growing community of inventors

Ibaraki, Japan

Hiroshi Takamura