Canon Kabushiki Kaisha

Hiroshi Takakusagi

Toshiyuki Ogawa

Toshihiro Shoyama

Yasuo Yamazaki

Hideaki Ishino

Nobutaka Ukigaya

Takeshi Aoki

Yukinobu Suzuki

Akihiro Kawano

Tasuku Kaneda

Takayasu Kanesada

A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2&#xd7;10atoms/cmand not greater than 4&#xd7;10atoms/cm, the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2&#xd7;10atoms/cmand not greater than 4&#xd7;10atoms/cm; and forming a photoelectric conversion element in the second semiconductor region after the annealing.

Imaging apparatus, method of manufacturing the same, and camera

A photoelectric conversion device has a silicon substrate which includes a first portion configured to perform photoelectric conversion, and a second portion which is arranged farther apart from a light receiving surface of the silicon substrate than the first portion and contains carbon. A first peak concentration as a carbon peak concentration in the second portion is not less than 1&#xd7;10[atoms/cm] and not more than 1&#xd7;10[atoms/cm], and a second peak concentration as an oxygen peak concentration in the second portion is not less than 1/1000 and not more than 1/10 of the first peak concentration.

Photoelectric conversion device, method of manufacturing the same, and camera

A photoelectric conversion device has an insulator film disposed on a silicon layer having a photoelectric conversion region, the insulator film having a portion overlapped with the photoelectric conversion region, a silicon oxide film disposed on the insulator film, the silicon oxide film having a portion overlapped with the photoelectric conversion region, an electroconductive member disposed between the insulator film and the silicon oxide film, and a silicon oxide layer disposed between the electroconductive member and the silicon oxide film, in which the portion overlapped with the photoelectric conversion region of the silicon oxide film is in contact with the portion overlapped with the photoelectric conversion region of the insulator film and the hydrogen concentration of the silicon oxide film is greater than the hydrogen concentration of the silicon oxide layer.

Photoelectric conversion device, image pickup system, and method for manufacturing photoelectric conversion device

A solid-state imaging apparatus, comprising a plurality of pixels respectively including photoelectric conversion portions arranged on a semiconductor substrate, wherein the plurality of pixels include pixels for imaging arranged according to a Bayer array and pixels for focus detection each having a light-shielding portion with an opening, and the opening of the light-shielding portion of a first pixel for focus detection arranged in a position where a red pixel of the Bayer array is to be arranged is made larger than that of a second pixel for focus detection arranged in a position where a blue pixel of the Bayer array is to be arranged.

Solid-state imaging apparatus and camera

A solid-state imaging apparatus, comprising a plurality of pixels arrayed on a substrate, and element isolation regions formed between the plurality of pixels on the substrate, wherein the plurality of pixels include a first pixel including a first color filter for passing light having a first wavelength, a second pixel including a second color filter for passing light having a second wavelength longer than the first wavelength, and a pixel for focus detection including a light-shielding pattern arranged on the photoelectric conversion portion to limit light entering the photoelectric conversion portion, and among the element isolation regions, a first region between the pixel for focus detection and the first pixel has a potential barrier against a signal charge, which is lower than that of a second region between the first pixel and the second pixel.

Solid-state imaging apparatus and imaging system

A solid-state imaging apparatus, comprising a plurality of pixels arranged on a substrate, and element isolation regions formed between the plurality of pixels on the substrate, wherein the plurality of pixels include a first pixel including a first color filter for passing light having a first wavelength, a second pixel including a second color filter for passing light having a second wavelength shorter than the first wavelength, and a pixel for focus detection into which light longer than at least the second wavelength enters, and of the element isolation regions, a first region between the pixel for focus detection and the first pixel has a potential barrier against a signal charge, which is higher than that of a second region between the first pixel and the second pixel.

Growing community of inventors

Atsugi, Japan

Hiroshi Takakusagi