Tokyo Electron Limited

Hiroshi Suzuki

Michishige Saito

Toshihiko Iijima

Ryoichi Yoshida

Akira Obi

Tetsuo Yoshida

Tetsuji Watanabe

Hideo Sakagawa

Shinji Niwa

Toshikatsu Wakaki

Kazuo Mitsui

Toshihiro Hosoda

Hayato Aoyama

Tetsuo Sato

A plasma etching method by using a plasma etching apparatus having a depressurizable processing chamber; a lower electrode for mounting thereon a substrate to be processed in the processing chamber; an upper electrode facing the lower electrode in the processing chamber with a plasma generation region formed therebetween; a radio frequency power supply unit for applying a radio frequency power between the upper electrode and the lower electrode to thereby form a radio frequency electric field in the plasma generation region, the method comprising: supplying a first gas including etchant gas to an upper gas inlet to introduce the first gas through the upper electrode into the plasma generation region; and feeding a second gas including dilution gas to a side gas inlet to introduce the second gas through a sidewall of the processing chamber into the plasma generation region.

Plasma etching method

A probe device having a loader unit and two measuring units is disclosed. Each of the loader and measuring units is an independent unit supported by an independent casing. Each of the loader and measuring units has its exclusive slave CPU and integrated circuit members are under the control of this slave CPU to manage operations of members at the unit. The slave CPUs are connected to a master CPU, which controls the slave CPUs and which is also an independent unit, and they are connected to one another only through the master CPU. Program language is common to the master and slave CPUs and the units can be electrically connected to form an integral control system in which signals are exchanged among the units.

Probe device and method of controlling the same

Growing community of inventors

Nirasaki, Japan

Hiroshi Suzuki