Hitachi, Ltd.

Hitachi Chemical Company, Ltd.

Smk Corporation

Hitachi Power Semiconductor Device, Ltd.

Hiroshi Suzuki

Hidetaka Sato

Daisuke Makino

Akio Nishikawa

Shun-ichiro Uchimura

Yoshiaki Wakashima

Ikushi Kano

Hirokazu Takasaki

Mutsuhiro Mori

Masaki Shiraishi

Akio Mukoh

Mikio Sato

Fumio Nakano

Shunichi Numata

Shigeki Komatsuzaki

Toru Koyama

Mitsumasa Kojima

Takao Uematsu

Shunichiro Uchimura

Hisashi Kohkame

So Watanabe

Goro Tanaka

Kunihiko Nishi

Takashi Yokoyama

Yasuo Miyadera

Takayuki Saito

Makoto Kaji

Shigeki Katogi

Hideo Hagiwara

Koji Fujisaki

Shigeo Amagi

Kunio Hirasawa

Susumu Era

Tohru Koyama

Yoshio Yoshioka

Tohru Kikuchi

Junji Mukai

Masataka Nunomura

Tadanori Segawa

Yasunori Kojima

Motoo Yamaguchi

Toshiyuki Fujita

Hidetaka Satou

Shinichi Toyoda

Tatsuo Kawata

Takeshi Komaru

Masashi Shitara

Hiroki Sashima

Masao Hosokawa

Isamu Sone

Osamu Horie

Kazuhiko Miyabayashi

Chikashi Kanno

Nobuhiko Shito

Hiroyoshi Sekine

Toshiyuki Koide

Koo Honjoo

Dai Kawasaki

Toshiaki Fukushima

Masahiro Kitamura

There is provided a jack that can be easily applied to an electronic device adopting a design where an outer edge portion of a casing is formed in an arc or tapered shape.

Jack

A semiconductor device includes first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type that is formed near a surface of the first semiconductor layer; a first main electrode that is electrically connected to the second semiconductor layer; a third semiconductor layer of the second conductivity type that neighbors the first semiconductor layer; a fourth semiconductor layer of the first conductivity type that is selectively disposed in an upper portion of the third semiconductor layer; a second main electrode that is electrically connected to the third semiconductor layer and the fourth semiconductor layer; a trench whose side face is in contact with the third semiconductor layer and the fourth semiconductor layer; a gate electrode that is formed along the side face of the trench by a sidewall of polysilicon; and a polysilicon electrode.

Semiconductor devices and power conversion systems

A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type on the first semiconductor layer; trenches in the first semiconductor layer; a semiconductor protruding part on the first semiconductor layer; a third semiconductor layer on the semiconductor protruding part; a fourth semiconductor layer on the third semiconductor layer; a gate insulating layer disposed along the trench; a first interlayer insulating layer disposed along the trench; a first conductive layer facing to the fourth semiconductor layer; a second conductive layer on the first interlayer insulating layer; a second interlayer insulating layer covering the second conductive layer; a third conductive layer on the third semiconductor layer and fourth semiconductor layer; a contacting part connecting the third conductive layer and third semiconductor layer; and a fourth conductive layer formed on the second semiconductor layer.

Semiconductor device and electric power conversion system using the same

An N-aryl-.alpha.-amino acid (I), which is a novel compound, is effective as a photoinitiator. The photoinitiator composition including this photoinitiator is effective for improving photosensitive properties of photosensitive materials containing poly(amic acid) and an addition polymerizable compound used for pattern formation. Further, a photoinitiator composition (A) comprising an N-aryl-.alpha.-amino acid (I) or (I'), a 3-substituted coumarin (II) and/or an azabenzalcyclohexanone (III), or a photoinitiator composition (B) comprising an N-aryl-.alpha.-amino acid (I) or (I'), a 3-substituted coumarin (II) and a titanocene (IV), or a photoinitiator composition (C) comprising a 3-substituted coumarin (II), a titanocene (IV) and an oxime ester (V), is effective for improving photosensitive properties of photosensitive materials containing poly(amic acid) and an addition polymerizable compound used for pattern formation.

Photoinitiator compositions including amino acids, coumarin and

A thermosetting resin composition comprising: [A] a polyfunctional epoxy resin produced from a reaction between a mixture of at least two polyhydric phenols selected from (a) bis(4-hydroxyphenyl)methane, (b) bis(4-hydroxyphenyl)ethane, (c) bis(4-hydroxyphenyl)-propane, (d) tris(4-hydroxyphenyl)alkane and (e) tetra(4-hydroxyphenyl)alkane, and epichlorohydrin, and [B] an acid anhydride curing agent; and a coil and a panel formed of said composition.

Coil impregnant of epoxy resin from polyhydric phenol mixture

A resin-encapsulated semiconductor which is free from the occurrence of blisters or cracks during soldering, suits for continuous production and has excellent moisture resistance reliability is obtained by using an epoxy resin encapsulating material which comprises

Resin-encapsulated semiconductor device

An epoxy resin composition for insulating a coil which comprises at least one polyfunctional epoxy resin, at least one latent curing catalyst, at least one filler and at least one surfactant, wherein the ceiling is set to the acid anhydride content in the composition at 10% by weight based on the weight of the epoxy resin; and a coil molded out of said resin composition.

Epoxy resin composition for insulating a coil, and a coil molded from

A thermoplastic resin composition for casting high-voltage coils containing two kinds of fillers (A) and (B), and products as molded coils and panels obtained by casting and curing the composition. The composition of the present invention contains 60%-85% by weight, based on the total weight of the composition, of a silica type filler which is an admixture (A) a spherical silica having an average particle diameter of 0.1-0.9 .mu.m and (B) a ground silica having an average particle diameter of 3-9 .mu., the ratio A/(A+B) being 1%-7% by weight. Products as molded coils and panels prepared by using the composition have good resistance to cracking and resistance to moisture.

Thermosetting resin composition for casting high-voltage coil, and

A multilayer wiring structure produced by using a special poly(amic acid) ester oligomer for making an interlayer insulating film has an almost flattened surface without suffering from level differences of underlying wiring patterns.

Process for producing multilayer wiring structure

Insulating resin composition for a semiconductor device having a multilevel interconnection layers formed by the resin and having a superior planarizing capability relative to a lower interconnection layer is provided, which resin being a cured product of a polyamic acid ester oligomer obtained by reacting an aromatic diamine and/or a diaminosiloxane with an aromatic tetracarboxylic acid ester obtained by reacting an aromatic tetracarboxylic acid dianhydride with an alcohol or alcohol derivative.

Insulating resin composition and semiconductor device using the same

A polyimide obtained from a polyamide-acid or polyamide-acid ester prepared by reacting dicyclohexyl-3,4,3', 4'-tetracarboxylic acid or dinanhydride with a diamine is excellent in transparency, heat resistance and mechanical properties, said polyimide being able to be obtained at a lower temperature, and particularly suitable for an orientation film used in a liquid crystal display device.

Dicyclohexyl-3,4,3',4'-tetracarboxylic acid or dianhydride thereof and

Resin encapsulated electronic devices are provided by encapsulating so-called flat-shaped, plate-like, or angular-shaped electronic devices with a resin composition containing rubber-like particles preferably having an average particle size of 150 .mu.m or less. In the course of production of said resin encapsulated electronic devices, no crack is produced in the electronic devices by the stress from the outside, and after production, said resin encapsulated electronic devices are amazingly lessened in formation of cracks by thermal stress and have high reliability.

Resin encapsulated electronic devices

A lubricating composition comprising (A) at least one member selected from (a) a polyoxyalkylene alkyl ether phosphate diester, (b) a polyoxyalkylene alkylphenyl ether phosphate diester and (c) a phosphonate ester, in an amount of 3% by weight or more, (B) an N,N'-ethylenebis acid amide having an average particle size of 1 .mu.m or more in an amount of 2 to 15% by weight, and if necessary (C) a lubricating oil having a viscosity of 5 mm.sup.2 /s or more ('.degree. C.) is suitable for cold plastic working of aluminum alloys, particularly age-hardening type aluminum alloys, at the reduction of area of 35% or more.

Lubricant for cold plastic working of aluminum alloys

A polyimide precursor resin composition comprising (a) a poly(amic acid) containing siloxane linkages, (b) an aminosilane, and (c) a solvent for both the components (a) and (b), can form a polyimide film excellent in adhesiveness and heat resistance and is suitable for producing a semiconductor device having high reliability.

Polyimide precursor resin composition and semiconductor device using the

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Hitachi, Japan

Hiroshi Suzuki