Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Nuvoton Technology Corporation Japan

Panasonic Semiconductor Solutions Co., Ltd.

Hiroshi Sugiyama

Kaname Motoyoshi

Masao Nakayama

Kouki Yamamoto

Masatoshi Kamitani

Masahiko Inamori

Shingo Matsuda

Kazuhiko Ohhashi

Kazuhiko Oohashi

Masahiro Maeda

Katsuhiko Kawashima

Yukihiro Onoda

Yasuhiko Uchida

Muneyoshi Noda

A high-frequency transistor includes a source electrode, a drain electrode, a gate electrode, and a gate drive line that applies a voltage to the gate electrode. An impedance adjustment circuit is connected between the gate electrode and the gate drive line. A characteristic impedance of the gate electrode is Z1, when a connecting point between the impedance adjustment circuit and the gate electrode is viewed from the impedance adjustment circuit. A characteristic impedance of the gate drive line is Z2, when a connecting point between the impedance adjustment circuit and the gate drive line is viewed from the impedance adjustment circuit. X that denotes a characteristic impedance of the impedance adjustment circuit is a value between Z1 and Z2.

High-frequency transistor

A high-frequency power amplifier that amplifies a high-frequency input signal and outputs a signal having one power selected from a plurality of powers includes a high output route that is a circuit, which amplifies the input signal and outputs a signal of a high power, and a medium output route that is a circuit, which amplifies the input signal and outputs a signal of a medium power. The high output route includes a high-output amplifier that amplifies the input signal, an output matching circuit that is connected to an output node of the high-output amplifier, and a switch element that is connected to an output node of the output matching circuit. The medium output route includes a medium-output amplifier that amplifies the input signal and a switch element that is connected between an output node of the medium-output amplifier and an output node of the output matching circuit.

High-frequency power amplifier

A bias circuitincludes: a transistor Qoperable to supply, to an amplifier, a bias current in accordance with a base current supplied thereto; a transistor Qoperable to pass a current in accordance with a reference voltage Vref; a transistor Qoperable to correct, in accordance with the current passed by the transistor Q, the base current to be supplied to the transistor Q, so as to compensate a temperature characteristic represented by the transistor Q; and a bias changing section (of a transistor Q, and resistances R, R, and R), connected to a base of the transistor Q, operable to change, in accordance with a control voltage VSW, an amount of the base current to be supplied to the transistor Q. The amplifieramplifies, by using the bias current supplied by the bias circuit, a radio frequency signal having been inputted thereto.

Radio frequency amplifier circuit and mobile communication terminal using the same

A bias voltage is applied via a first resistance to the base of a first transistor, and a radio frequency signal is input via a first capacitor to the base of the first transistor. The bias voltage is applied via a second resistance to the base of a second transistor. The bias voltage is applied via a third resistance to the base of a third transistor, and the radio frequency signal RF is input via a third capacitor to the base of the third transistor. A first band rejection filter is provided between the base of the first transistor and the base of the second transistor. A second band rejection filter is provided between the base of the second transistor and the base of the third transistor. The collectors of the first to third transistors are connected in common and the emitters thereof are all grounded.

Radio frequency power amplifier

A bias current to be supplied to an amplification circuitis drawn out of a collector of a transistor Qof a bias circuit. The drawn-out bias current is input to a base of a transistor Qvia an attenuation filter Fand is output from an emitter of the transistor Qin the state where the voltage thereof is reduced by a level corresponding to Vbe. The attenuation filter Fis conducted in a DC manner, and attenuates a component of a frequency fH(=2ft&#x2212;fr) defined by a transmission frequency ft and a receiving frequency fr of a radio frequency signal. The bias current output from the emitter of the transistor Qis supplied to the amplification circuitvia an attenuation filter F. The attenuation filter Fis conducted in a DC manner, and attenuates a component of a frequency fL(=|fr&#x2212;ft|).

RF power amplifier

A sealed lead acid storage battery includes a monoblock container, a cover, plural assembly elements, each assembly element comprising a plurality of positive and negative electrode plates that are stacked via separators in a predetermined direction, a positive and negative electrode strap, and a positive and negative electrode terminal. The positive and negative electrode terminals protrude above the cover. The container further comprises ribs formed inside a bottom surface thereof for enabling the electrode plates to rest on the ribs. Each positive electrode plate has a pair of feet that are formed on a lower end thereof in a substantially symmetrical arrangement and further comprises a lug connected to the positive electrode strap that is disposed at a position shifting either to the left or to the right. One of the feet correspond to the position having the lug not resting on any rib, while the other foot rests on a rib. The storage battery further comprises a projection formed on an end face of the opening of one of the container and the cover and a recess formed in an end face of the opening of the other. The projection is fitted in the recess and bonded thereto via an adhesive. At least either an inner face of the recess or a surface of the projection has a plurality of vertical ribs for defining a space between the surface of the projection and the inner face of the recess.

Sealed storage battery having electrode plate foot which rests on a rib

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Osaka, Japan

Hiroshi Sugiyama