Canon Kabushiki Kaisha

Takasago International Corporation

Kabushiki Kaisha Toshiba

Chugai Seiyaku Kabushiki Kaisha

Japan Science and Technology Corporation

Japan Science and Technology Agency

Kyoto University

Fujitsu Corporation

Nihon University

Semiconductor Energy Laboratory Co., Ltd.

Toshiba Kikai Kabushiki Kaisha

Tokyo Electric Co.

Toagosei Company, Ltd.

Kent State University

Sogang University Research Foundation

Hiroshi Sugiyama

Toshimitsu Hagiwara

Yoshimasa Matsushima

Tohru Kobayashi

Isao Saito

Makoto Takamiya

Hidejiro Kadowaki

Yasuhiko Ishida

Toshikazu Bando

Miwako Doi

Hitoshi Kondo

Mamoru Yamada

Hirokazu Iida

Yasuo Misu

Masanori Okada

Itaru Hashimoto

Kosuke Yamamoto

Yasushi Murakami

Yoshitaka Okamura

Misao Yagi

Masaki Takeuchi

Noriaki Soga

Jun Koshobu

Hiroki Nagase

Hiroko Konuma

Mika Tadokoro

Toshimitsu Kuboki

Jiro Moriyama

Takashi Imai

Ken Tsuchii

Toshiharu Inui

Akihiko Shimomura

Hiroyuki Maeda

Kazuhiro Nakajima

Hisao Yaegashi

Isao Ebisawa

Yoshiyuki Kokojima

Yuko Suga

Akira Katayama

Kenichiro Hashimoto

Tamotsu Hasegawa

Shigeru Mitsuhashi

Yoshitaka Iwane

Kousuke Yamamoto

Noboru Fukuda

Tomohiro Katsumata

Yoko Aoki

Atsushi Takatori

Keizo Hosoda

Shunpei Yamazaki

Toshimitsu Konuma

Akira Mase

Haruo Uchida

Nobuyuki Watanabe

Takashi Saito

Tetsuo Takematsu

Daisuke Yamamoto

Masafumi Wataya

Kaoru Suzuki

Takahiro Ueno

Hajime Suzuki

Toshiyuki Yanaka

Akio Yamaguchi

Shuichi Tsujimoto

Hidenori Takahashi

Haruhiko Takahashi

Jun Ashiwa

Kazuhiro Kimura

Hiroyuki Tsuboi

Kazuo Ohyama

Jun Koshoubu

Kiyoshige Ochi

Kenichi Kameyama

Toshiyuki Koga

Yoko Takahashi

Hideki Tanaka

Masuo Koizumi

Kazuhide Takahama

Kento Aizawa

Shinji Tsuchiya

Atsutomo Yoshizawa

Katsumi Kiuchi

Tetsuji Sunami

Yoko Matsuda

Kiyoshi Uchida

Masahiro Yoshimoto

Hiromi Tomioka

Hanbin Mao

Takayoshi Uchida

Seong Hyun Lee

Keisuke Itakura

Norio Shirakawa

Kyu Bong Jo

Yoshikazu Kumagai

Tsubasa Asatsuma

Minzo Sakaguchi

Yasuhiko Kamikubo

Zhi-Fu Tao

Zhi Fu Tao

Deepak P Koirala

A Fourier transform infrared spectrometer (FTIR) includes: an infrared light source; an interferometer; a semiconductor laser for position reference of a movable mirror thereof, and a computer that performs Fourier transformation to a detected signal of an infrared interference wave from a sample to calculate a spectrum based on a memorized wavelength of the semiconductor laser and a detected value of a laser interference wave by a laser detector. The computer executes a program for calculating a spectrum of a solid reference sample, interpolating the spectrum of the reference sample in a wavenumber region of a unique peak, reading out a wavenumber of the unique peak based on a data after interpolation, and updating the wavelength of the semiconductor laser used in Fourier transformation such that the read-out value of the wavenumber falls within a specific range having an original wavenumber of the unique peak as a reference.

Fourier transform infrared spectrometer

An infrared spectrometer includes: an openable sealed housing that houses optical components; an infrared light source that irradiates an infrared light into the housing; a dehumidifying agent that dehumidifies an inside of the housing; a thermos-hygro sensor that detects a humidity inside the housing; and a light source control apparatus that controls power supply to the infrared light source. The light source control apparatus: starts the infrared light source while limiting power supply to the infrared light source; determines presence/absence of a risk of condensation inside the sealed housing based on detected value of humidity detected while power is supplied to the infrared light source; if the risk of condensation is present, balances a rate of increase of the detected value of humidity and a rate of decrease of humidity, and at the same time, increases power supply to the infrared light source gradually.

Infrared spectrometer

The present invention provides a high alumina fused cast refractory that is easily produced and has low porosity and high corrosion resistance, and a method of producing the same. The high alumina fused cast refractory of the present invention has the following chemical composition: 95.0 mass % to 99.5 mass % AlO, 0.20 mass % to 1.50 mass % SiO, 0.05 mass % to 1.50 mass % BO, 0.05 mass % to 1.20 mass % MgO and balance. The method of producing the high alumina fused cast refractory of the present invention includes obtaining a mixture by mixing an AlOsource material, a SiOsource material, a BOsource material and an MgO source material, and fusing the mixture.

High alumina fused cast refractory and method of producing same

The present disclosure relates to a composition for analysis of DNA sequences and a method for analysis of DNA sequences by using the same and, more particularly, to a composition comprising the compound represented by Chemical Formula 1 and a method for analysis of DNA sequences, the method comprising a step of treating a sample with the same. The compound represented by Chemical Formula 1 in which TAMRA is linked to polypyrrole specifically binds an A/T base pair (W) to fluoresce alone without causing DNA photocleavage. Therefore, the compound is useful for DNA analysis particularly at the single DNA molecule level.

Chemical and method for analyzing DNA sequence by visualizing single-molecule DNA and use thereof

Provided are a RUNX inhibitor which binds to a RUNX-binding sequence on DNA and thus inhibits the binding of a RUNX family member to the sequence; an antitumor agent comprising the RUNX inhibitor; and an antiallergic agent comprising the RUNX inhibitor.

RUNX inhibitor

The present invention provides a novel alkylating agent specifically binding to the genetic mutation site of a driver oncogene. There are provided are a complex formed by binding an alkylating agent to a pyrrole imidazole polyamide specifically binding to the genetic mutation site of a driver oncogene, a driver oncogene mutation-specific alkylating agent comprising the aforementioned complex, and a pharmaceutical composition comprising the aforementioned complex.

Alkylating agent for alkylating target with driver oncogene mutation

The present invention provides: a histone modification control agent for activating expression of a specific gene, i.e., a complex including a histone acetylation enzyme activator useful as an agent for activating a specific gene, and a polyamide for recognizing a regulatory region of a target gene; and a method for manufacturing the same. This complex specifically activates a group of genes relating to maintenance and/or differentiation of stem cells or precursor cells.

CTB-PI polyamide conjugate for activating expression of specific gene

A biosensing platform capable of high throughput mechanochemical biosensing comprising a DNA origami nanostructure having a plurality of slots into which recognition elements are strategically placed and apparatus that senses a change in the origami nanostructure in response to the introduction of a target where the apparatus includes a signal transduction unit and signal sensor which exploits mechanical signals in a recognition element which signal includes one or more mechanical tension or mechanochemical rearrangement event. The nanostructure is preferably a 2-dimensional or 3-dimensional arrangement of tiles linked by locking elements, such as aptamers that will open in response to an event such as exposure to a drug molecule, DNA, RNA or protein target.

Mechanochemical platform and sensing methods using DNA origami nanostructures

To provide a total reflection measurement device that can improve a light utilization rate more than a Cassegrain type objective mirror, is capable of total reflection measurement at low magnification, and can maintain compatibility with a conventional objective mirror. The device () includes: a pair of plane mirrors () disposed on a central axis (P); a pair of intermediate mirrors () opposing to the plane mirrors (), respectively; a pair of ellipsoidal mirrors () opposing to the intermediate mirrors (), respectively; and an ATR crystal () provided at a position nearer to the sample side than the pair of plane mirrors () on the central axis (P). The ellipsoidal mirrors () are provided so that each one focal position (C) formed by the intermediate mirror () and the plane mirror () are at same position on the central axis (P), and each another focal position (C) formed by only the intermediate mirror () are also at same position on the central axis (P). Further, the another focal position (C) coincides with a boundary surface between the ATR crystal () and the sample.

Total reflection measurement device

An ATR optical instrument condensing an infrared light to a sample-side surface of a ATR crystal to measure a total reflection absorption spectrum includes: an incident-side ellipsoidal mirror condensing the infrared light to the sample-side surface at an incident angle equal to or larger than a critical angle &#x3b8;c inside; an exiting-side ellipsoidal mirror condensing a total reflection light from the sample-side surface; dichroic mirrors guiding an illumination light coaxially to the ellipsoidal mirrors; and a ZnS lens condensing a visible light from the sample-side surface to observe a contact state of the sample. The dichroic mirrors are configured to guide the illumination light to the ellipsoidal mirrors such that the illumination light is condensed to the sample-side surface at an angle less that a critical angle &#x3b8;c' of the visible light. Accordingly, the ATR optical instrument becomes compact, and can visually observe the contact state of the sample surface.

Optical instrument for measuring total reflection absorption spectrum and measuring device

The problem to be solved by the present invention is to provide an infrared microscope with good measuring accuracy and less crosstalk. The infrared microscopecomprises a light source, an irradiating unitfor irradiating the infrared light from the light source to a sample, a focusing unitfor focusing the infrared light transmitted through or reflected by the sample, and a detectorfor detecting the focused infrared light. The irradiating unitcomprises a first aperture, and the first aperture is disposed at a position where the infrared light from the light source passes therethrough. The focusing unitcomprises a second aperture, and the second aperture is disposed at an imaging position of the infrared light at the first aperture. The first aperture has a plurality of holes, and the holes are disposed at intervals corresponding to the arrangement of the light-receiving elements provided in the detectorto detect the infrared light as a detecting light. The second aperturehas holes that have the same size and arrangement as the first aperture

Infrared microscope

A high zirconia electrically fused cast refractory having long time durability with less cracking during production and in the course of temperature rising, excellent in productivity, less forming zircon crystals in the refractory itself and even in contact with molten glass, excellent in bubble foamability to molten glass, less generating cracks even undergoing heat cycles during operation of a glass melting furnace. A high zirconia electrically fused cast refractory comprises, as chemical component, 85 to 95% by weight of ZrO, 0.4 to 2.5% by weight of AlO, 3.5 to 10.0% by weight of SiO, 0.05% by weight or more of NaO, 0.05 to 0.7% by weight of NaO and KO in total, 0.01 to 0.04% by weight of BO, 0.1 to 3.0% by weight of SrO or BaO when one of BaO and SrO is contained, 0.1% by weight or more of SrO and 0.1 to 3.0% by weight of SrO and BaO in total when both of BaO and SrO are contained, 0.01 to 0.2% by weight of CaO, 0.1% by weight or less of MgO, 0.01 to 0.7% by weight of SnO, 0.3% by weight or less of FeOand TiOin total, less than 0.01% by weight of PO, and less than 0.01% by weight of CuO.

High zirconia electrically fused cast refractory

A high zirconia electrically fused cast refractory of high electric resistance having long time durability, less suffering from cracking during production and upon temperature rising, excellent in productivity, less forming zircon crystals even upon heating the refractory in itself and when the refractory is in contact with molten glass, generating less cracks even when undergoing heat cycles during operation of a glass melting furnace is provided. A high zirconia electrically fused cast refractory has, as chemical components, 85 to 95% by weight of ZrO, 0.1 to less than 0.8% by weight of AlO, 3.5 to 10.0% by weight of SiO, less than 0.05% by weight of NaO and KO in total, 0.1 to 1.5% by weight of BO, 0.1% by weight or less of MgO, 0.01 to 0.2% by weight of CaO, in the case where any one of BaO and SrO is contained, from 0.05 to 3.0% by weight of BaO or 0.01 to 3.0% by weight of SrO, or in the case where both of them are contained, 0.01% by weight or more of SrO and from 0.01% to 3.0% by weight in total of SrO and BaO, 0.1 to 0.7% by weight of SnO, 0.3% by weight or less of FeOand TiOin total, less than 0.01% by weight of PO, and less than 0.01% by weight of CuO.

Growing community of inventors

Tokyo, Japan

Hiroshi Sugiyama