Hitachi, Ltd.

Hitachi Chemical Company, Ltd.

Renesas Technology Corp.

Other

Suntory Limited

Hitichi, Ltd.

Hiroshi Shiraishi

Takashi Hattori

Takumi Ueno

Toshihiko Tanaka

Norio Hasegawa

Toshio Sakamizu

Nobuaki Hayashi

Yuko Tsuchiya

Hidetoshi Satoh

Fumio Murai

Hiroshi Fukuda

Michiaki Hashimoto

Asao Isobe

Tadashi Arai

Takao Iwayanagi

Yasuko Gotoh

Minoru Toriumi

Emiko Fukuma

Keiko Tadano

Akira Imai

Toshiaki Yamanaka

Yumiko Anzai

Saburo Nonogaki

Shinji Okazaki

Shinkichi Horigome

Yoshinori Miyamura

Koji Kato

Daisuke Makino

Takashi Nishida

Takashi Soga

Seiichiro Shirai

Shigeru Koibuchi

Takahiro Kohashi

Keizo Kato

Takeshi Ishikawa

Kazuya Kadota

Toshiyuki Yoshimura

Hidenori Yamaguchi

Hajime Hayakawa

Sonoko Migitaka

Ryotaro Irie

Yoshiyuki Yokoyama

Naoko Miura

Masahiro Hashimoto

Mitsuho Hirata

There is a problem in that when the demand accuracy with respect to a semiconductor pattern dimension comes close to a resist molecule size with miniaturization, the device performance is deteriorated due to edge roughness of a resist pattern to exert a bad influence on the system performance. The present invention overcomes the problem by the procedure in which super-molecules which are small in dimension as compared with the conventional polymers are used as main components, the reaction number required for the change of molecule solubility is made constant and as large as possible, and an acid generator is made clathrate or combinatory n super molecules to make an acid catalyst concentration large. As a result, it is possible to form a pattern of molecular accuracy with high productivity even with respect to the pattern dimension less than 50 nm, thereby realizing the high performance system.

Method for producing electronic device

Providing a photo mask for KrF excimer laser lithography, which can be produced with high accuracy and low defects in a smaller number of steps. A photo mask for KrF excimer laser lithography according to the present invention is one in which a resist patternefficiently absorbing a KrF excimer laser light (wavelength: about 248 nm) is formed directly on a quartz substrate. The resist patterncomprises: an aqueous alkali-soluble resin having a high light shielding property, which incorporates a naphthol structure having at least one hydroxyl group bound to a naphthalene nucleus; or a radiation sensitive resist having, as a main component, an aqueous alkali-soluble resin containing a derivative of the above-mentioned aqueous alkali-soluble resin as a resin matrix.

Photo mask

To develop a small quantity of various kinds of semiconductor devices in a short time and to realize a photomask suitable to be manufactured at a low cost. A shade pattern of a photomask is constituted by containing nanoparticles such as carbon in an organic film such as a photoresist film. A pattern is transferred to a photoresist on a semiconductor wafer by means of the reduction projection exposure using the photomask. At the time of the above exposure, it is possible to select exposure light within a range of wide wavelengths including i-line, KrF excimer laser beam, ArF excimer laser beam, or the like.

Photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method

A negative pattern is formed to be transparent in the far ultraviolet region including the wavelength 193 nm of an ArF excimer laser and, despite its chemical structure having high dry etching, does not swell and has excellent resolution. An acid-catalyzed reaction is utilized wherein a &#x3b3;-hydroxy or &#x3b4;-hydroxy carboxylic acid structure is partially or entirely converted to a &#x3b3;-lactone or &#x3b4;-lactone structure. The negative pattern is developed with an aqueous alkali solution without swelling.

Method for pattern formation and process for preparing semiconductor device

A method of manufacturing an electron device provided with minute structure such as a semiconductor integrated circuit using projection exposure technique and phase shift mask technique, maintaining a high yield is disclosed. In an electron device manufacturing method according to the invention, a desired electron device is manufactured by printing a light shielding film pattern on a photosensitive film provided on the surface of a workpiece by a projection tool using a mask where a phase shifter having predetermined thickness is partially formed on the flat surface of a transparent plate and a light shielding film having a predetermined pattern and made of non-metal is partially provided with the film covering the end of the shifter and developing the photosensitive film. Further, concretely, the above pattern is printed using a mask where the light shielding film made of non-metal is partially extended on the surface of the shifter and the transparent plate including the end of the shifter by the projection tool. According to the electron device manufacturing method according to the invention, an electron device provided with minute structure can be precisely manufactured maintaining a high yield.

Electron device manufacturing method, a pattern forming method, and a photomask used for those methods

A negative pattern is formed to be transparent in the far ultraviolet region including the wavelength 193 nm of an ArF excimer laser and, despite its chemical structure having high dry etching, does not swell and has excellent resolution. An acid-catalyzed reaction is utilized wherein a &ggr;-hydroxy or &dgr;-hydroxy carboxylic acid structure is partially or entirely converted to a &ggr;-lactone or &dgr;-lactone structure. The negative pattern is developed with an aqueous alkali solution without swelling.

A chemically amplified photosensitive resin composition containing a first compound forming an acid by irradiation of actinic ray and a second compound that changes the solubility to an aqueous alkali solution with acid-catalyzed reaction wherein an ion dissociative compound having the composition represented by the general formula (1) or (2), as well a method of forming a resist pattern using the composition are disclosed, the formulae being expressed by:

Photosensitive resin composition and method of forming resist images

A negative pattern is formed to be transparent in the far ultraviolet region including the wavelength 193 nm of an ArF excimer laser and, despite its chemical structure having high dry etching, does not swell and has excellent resolution. An acid-catalyzed reaction is utilized wherein a .gamma.-hydroxy or .delta.-hydroxy carboxylic acid structure is partially or entirely converted to a .gamma.-lactone or .delta.-lactone structure. The negative pattern is developed with an aqueous alkali solution without swelling.

Method for pattern formation and process for preparing semiconductor

In forming a thin film pattern, first a seed material film is formed on a substrate and then exposed using electron beam lithography, for example, in the shape of the pattern. The latent image is then removed and an oriented material is deposited on one of the seed material and the substrtate, which have different hydrophilicity properties, to form the pattern. The oriented film is formed by an LB film forming method, in one example, and in another example the LB film material is a cresol novolak resin having a proportion of p-cresol novolak to m-cresol novolak of at least 20%.

Method for forming a pattern and forming a thin film used in pattern

A pattern can be formed on a substrated using a pattern forming material comprising (a) a medium, e.g. a polymer or compound, having reactivity for changing solubility in an alkali aqueous solution by a reaction using an acid as a catalyst, and (b) as an acid precursor an alkylsulfonic acid ester obtained from a compound having at least two phenolic hydroxyl groups.

Pattern forming material and process for forming pattern using the same

Electrical charge accumulation caused by exposure to a charged particle beam during the formation of latent image pattern can be reduced and thus the positional deviation of the pattern by using a bottom-resist layer comprising a radiation-induced conductive composition. Highly integrated semiconductor device can be made easily and in high yields. The positional deviation can further be reduced by exposing a charge particle beam patterning apparatus substantially simultaneously with an actinic radiation such as ultraviolet light, X-ray, and infrared light.

Method of forming pattern and making semiconductor device using

A lithographic method for forming a mask pattern is useful for etching wiring or insulator layers on a substrate. A catalyst generation layer and a latent image formation layer are formed on the target layer prior to application of actinic radiation to activate a catalyst in the catalyst generation layer in accordance with a predetermined pattern. The activated catalyst diffuses into the latent image formation layer to form a latent image, which then serves as a mask pattern for etching the catalyst generation layer, latent image formation layer and target layer. The catalyst generation layer may be formed prior to the latent image formation layer, or vice versa. In another embodiment, the catalyst generation layer is formed prior to the radiation step, but the latent image formation layer is formed after application of the actinic radiation.

High-resolution lithography and semiconductor device manufacturing method

Growing community of inventors

Hachioji, Japan

Hiroshi Shiraishi