Matsushita Electric Industrial Co., Ltd.

Toyo Seikan Group Holdings, Ltd.

Panasonic Corporation

Matsushita Electric Works, Ltd.

Nippon Closures Co., Ltd.

Matsushita Electric Ind., Ltd.

Tokan Material Technology Co., Ltd.

Hiroshi Shimomura

Mizuki Segawa

Atsushi Hori

Shuichi Kameyama

Takehiro Hirai

Kouji Nanbu

Hirohisa Masuda

Toshihiko Miyazaki

Kazuaki Ohashi

Yasuhiro Kosaka

Akira Ishiko

Mitsuo Tanaka

Kazuya Kikuchi

Akiko Ogata

Yoshihiko Horikawa

Kenji Hayashi

Takashi Nakamura

Hiroaki Kikuchi

Hiroshi Kimura

Kiyoyuki Morita

Takashi Nakabayashi

Takashi Uehara

Koji Yamada

Katsumi Hashimoto

Mitsuo Yasuhira

Joji Hayashi

Yoshio Imamura

Sei Nakagawa

Yukiko Saito

Kazushige Morisue

Akiko Koganei

Kiyoshi Yamada

Jyoji Hayashi

A substrate for flexible device, including a stainless steel sheet, an oxide layer formed on a surface of the stainless steel sheet, and a glass layer of electrically-insulating bismuth-based glass formed in a form of layer on the surface of the oxide layer. Also disclosed is a sheet for flexible device, including a stainless steel sheet, and an oxide layer on a surface of the stainless steel sheet, the oxide layer having a thickness of not less than 30 nm.

Substrate for flexible device

A substrate for flexible device. The substrate has a nickel-plated metal sheet having a nickel-plating layer formed on at least one surface of a metal sheet or a nickel-based sheet, and a glass layer of an electrically-insulating layered bismuth-based glass on a surface of the nickel-plating layer or the nickel-based sheet. An oxide layer having a roughened surface is formed on the surface of the nickel-plating layer or the surface of the nickel-based sheet, and the bismuth-based glass contains 70 to 84% by weight of BiO, 10 to 12% by weight of ZnO, and 6 to 12% by weight of BO. Also disclosed is a method for producing the substrate for flexible device, a substrate for an organic EL device, a sheet used as a substrate for flexible device, a method for producing the sheet and a bismuth-based lead-free glass composition.

Substrate for flexible device and method for producing the same

A substrate for a flexible device which includes a stainless steel sheet, a nickel plating layer formed on a surface of the stainless steel sheet, and a glass layer of electrical insulating bismuth-based glass formed in the form of layer on a surface of the nickel plating layer.

Fine metal particles of any one of Ag, Cu or Zn having a dispersing agent that is coordinated on the surfaces thereof, the dispersing agent having an acid value and an amine value which are both in a range of 0 to 20 mgKOH/g (wherein when either the acid value or the amine value is 0, the other one is not 0), and a dispersion solution in which the fine metal particles are dispersed. The fine metal particles and the dispersion solution containing the fine metal particles can be diluted with various kinds of solvents of either the water type or the organic type, and feature excellent dispersion property even after having been diluted.

Fine metal particles, dispersion solution containing fine metal particles, and process for the production thereof

A dispersion solution containing ultrafine metal particles, comprising a low-boiling solvent and, contained therein, ultrafine metal particles of any one of Ag, Cu or Zn having a fatty acid and a glyceride coordinated on the surfaces thereof. The dispersion solution contains, dispersed therein, ultrafine metal particles that have excellent antibacterial power at a high concentration without being aggregated. The dispersion solution maintains excellent dispersion property even after the passage of long periods of time and also exhibits very high degree of transparency even when it is mixed into a resin composition.

Dispersion solution containing antibacterial ultrafine metal particles and method of producing the same

A curable resin composition including a curable resin in which ultrafine metal particles modified with a fatty acid are dispersed. The ultrafine metal particles are fatty acid-modified ultrafine metal particles having a fatty acid coordinated on the surfaces of the ultrafine metal particles and a glyceride coordinated around the fatty acid or on the surfaces of the ultrafine metal particles.

Curable resin composition having antibacterial power

A solvent type curable ink for ink-jet printing obtained by dissolving or dispersing, in a volatile organic solvent, polyesterpolyol having a molecular weight of not more than 8000, a hydroxyl value (KOH mg/g) of 17 to 50 and a glass transition point (Tg) of not higher than 70&#xb0; C., and blocked polyisocyanate. The ink is capable of forming ink-jet-printed image on the surfaces of various kinds of formed articles without burring and maintaining close adhesion upon being heated at a low temperature for a short period of time.

Ink for ink-jet printing and method of ink-jet printing

An ink for ink-jet printing used for ink-jet printing images onto the ink non-absorptive surfaces of cylindrical containers, and comprising at least a water-soluble solvent, a coloring material, a surfactant, a thickener and/or a binder resin, the coloring material being contained in an amount of 5 to 20% by weight, the surfactant in an amount of 0.1 to 5% by weight, the thickener in an amount of not more than 10% by weight, and the binder resin being contained in an amount of not more than 30% by weight. Owing to its ink-jet printability, the ink for ink-jet printing of the invention can be favorably used for printing images on the non-absorptive cylindrical containers such as seamless cans that are used for containing beverages and foods.

Ink for ink-jet printing, printed cylindrical containers and method for producing the same

In a semiconductor device, such as a MOSFET or the like, which is a high-frequency LSI achieving a low noise figure and a high maximum oscillation frequency and which has unit cells with a ring-shaped gate electrode arranged in an array, gate drawing wires connecting together the gate electrode and gate contact pad portions are arranged on a region excluding a drain region and a source region, that is, on an isolation region. Bending portions of the ring-shaped gate electrode are all formed on the isolation region. This therefore permits an improvement in high frequency characteristics such as noise, the maximum oscillation frequency, and the like while eliminating unnecessary gate capacity addition, and also permits small characteristic variation even if a machining shape of the bending portions of the gate electrode is unstable.

Semiconductor device

A semiconductor integrated circuit includes a semiconductor substrate , an insulating layer formed on the semiconductor substrate , and a bonding pad formed on the insulating layer . The semiconductor substrate has a region facing the bonding pad and a region substantially surrounding at least a part of the region . The region of the semiconductor substrate is set substantially at an equipotential.

Semiconductor integrated circuit and system

An evaluation pattern and an evaluation method of devices capable of measuring with precision the unit capacitance and specific precision of passive devices necessary in analog circuits on a single semiconductor substrate, unit capacitors in such a quantity to overcome the measuring error of measuring instruments, arranged in an array by nx pieces in the X direction (nx being a natural number) and ny pieces in the Y direction (ny being a natural number), are connected by wiring to be capable of measuring the sum of capacitances in each column at least in one of the array directions in the X and Y directions of the unit capacitors.

Semiconductor device evaluation pattern and evaluation method

In an active area surrounded with an isolation formed on a silicon substrate, a large number of unit cells are disposed in a matrix, and the unit cell together form one MOSFET. Each of the unit includes a ring gate electrode in the shape of a regular octagon, a drain region and a source region formed at the inside and outside of the gate electrode, respectively, two gate withdrawn wires extending from the gate electrode to area above the isolation, a substrate contact portion in which the surface of the substrate is exposed, and contacts for electrically connecting these elements with wires. These elements such as the ring gate electrode and the gate withdrawn wires are formed so as to attain a high frequency characteristic as good as possible. Thus a MOSFET for use in a high frequency signal device, the high frequency characteristic such as the minimum noise figure and the maximum oscillation frequency in particular can be totally improved.

High frequency ring gate MOSFET

In a semiconductor apparatus having a PNP bipolar transistor and high voltage resistance, there is formed an oxide insulating layer in the surface region of a P-type semiconductor substrate. In the above semiconductor substrate is formed a P-type collector layer so that at least a part of the P-type collector layer is in contact with said oxide insulating layer. In the surface region of said P-type collector layer is formed a P-type collector contact layer. An N-type base layer is formed in that region on the surface side of said P-type collector layer in which said P-type collector contact layer does not exist. A P-type emitter layer is formed on the surface side of said N-type base layer. A P-type collector-contact/base leakage prevention layer, which has a higher impurity concentration than said P-type collector layer, is formed at least in that region of said P-type collector layer which is in contact with said oxide insulating layer, so as to prevent the generation of a leakage current between said P-type collector contact layer and said N-type base layer.

Method of manufacturing a semiconductor apparatus

Mounted on a single semiconductor substrate are a DRAM, MOS transistor, resistor, and capacitor. The gate electrode of the DRAM and the gate electrode of the MOS transistor are formed by a common layer (i.e., a first-level poly-Si layer). The storage electrode of the DRAM. the resistor, and the lower electrode of the capacitor are formed by a common layer (i.e., a third-level poly-Si layer). The plate electrode of the DRAM and the upper electrode of the capacitor are formed by a common layer (i.e., a fourth-level poly-Si layer).

Growing community of inventors

Osaka, Japan

Hiroshi Shimomura