Sanken Electric Co., Ltd.

Shin-Etsu Handotai Co., Ltd.

Hiroshi Shikauchi

Ken Sato

Masaru Shinomiya

Kazunori Hagimoto

Keitaro Tsuchiya

Hirokazu Goto

Tomonori Hotate

Hiromichi Kumakura

Yuki Tanaka

Satoru Washiya

Ryohei Baba

Hiroko Kawaguchi

Youhei Ohno

Shinji Kudoh

Hirotaka Kurimoto

Shoichi Kobayashi

Ning Wei

A semiconductor device substrate including: a substrate; a buffer layer which is provided on the substrate and made of a nitride semiconductor; and a device active layer which is formed of a nitride semiconductor layer provided on the buffer layer, the semiconductor device substrate in that the buffer layer includes: a first region which contains carbon and iron; a second region which is provided on the first region and has average concentration of iron lower than that in the first region and average concentration of carbon higher than that in the first region, and the average concentration of the carbon in the second region is lower than the average concentration of the iron in the first region. The semiconductor device substrate which can suppress a transverse leak current in a high-temperature operation of a device while suppressing a longitudinal leak current and can inhibit a current collapse phenomenon is provided.

Semiconductor device substrate, semiconductor device, and method for manufacturing semiconductor device substrate

A semiconductor device and a method for forming the semiconductor device. The semiconductor device includes: a unipolar component at least including an epitaxial layer; a transition layer connected to the epitaxial layer; and a bypass component connected to the transition layer; the unipolar component and the bypass component are connected in parallel and the transition layer is configured between the unipolar component and the bypass component.

Semiconductor device and method for forming the semiconductor device

Semiconductor base including: silicon-based substrate; buffer layer including first and second layers alternately on silicon-based substrate, first layer made of nitride-based compound semiconductor containing first material, second layer made of nitride-based compound semiconductor containing second material having larger lattice constant than first material; channel layer on buffer layer and made of nitride-based compound semiconductor containing second material, buffer layer has: first composition graded layer between at least one of first layers and second layer immediately thereabove, made of nitride-based compound semiconductor whose composition ratio of second material is increased gradually upward, whose composition ratio of first material is decreased gradually upward; second composition graded layer between at least one of second layers and first layer immediately thereabove, made of nitride-based compound semiconductor whose first material is increased gradually upward, whose composition ratio of second material is decreased gradually upward, first composition graded layer is thicker than second composition graded layer.

Semiconductor base having a composition graded buffer layer stack

A substrate for semiconductor device includes a substrate, a buffer layer which is provided on the substrate and made of a nitride semiconductor, and a device active layer which is provided on the buffer layer and composed of a nitride semiconductor layer, wherein the buffer layer contains carbon and iron, a carbon concentration of an upper surface of the buffer layer is higher than a carbon concentration of a lower surface of the buffer layer, and an iron concentration of the upper surface of the buffer layer is lower than an iron concentration of the lower surface of the buffer layer. As a result, the substrate for semiconductor device can reduce a leak current in a lateral direction at the time of a high-temperature operation while suppressing a leak current in a longitudinal direction.

Substrate for semiconductor device, semiconductor device, and method for manufacturing semiconductor device

A semiconductor base substance includes: a substrate; a buffer layer which is made of a nitride semiconductor and provided on the substrate; and a channel layer which is made of a nitride semiconductor and provided on the buffer layer, wherein the buffer layer includes: a first region which is provided on the substrate side and has boron concentration higher than acceptor element concentration; and a second region which is provided on the first region, and has boron concentration lower than that in the first region and acceptor element concentration higher than that in the first region. As a result, the semiconductor base substance which can obtain a high pit suppression effect while maintaining a high longitudinal breakdown voltage is provided.

Semiconductor base substance having a boron containing buffer layer, semiconductor device including the same, and methods for manufacturing the semiconductor base substance and the semiconductor device

A semiconductor wafer and a method for forming a semiconductor. The semiconductor wafer includes: a first semiconductor component having a first device; a second semiconductor component having a second device; an insulation layer laterally extending to the first semiconductor component and the second semiconductor component; and a grind layer configured on or adjacent to a backside of the semiconductor wafer. Therefore, chipping or cracking can be decreased or avoided when the grind layer is exposed during the thinning process (such as backside grinding).

Semiconductor wafer and method for forming semiconductor

A method of manufacturing an epitaxial wafer having an epitaxial layer on a silicon-based substrate, the method of manufacturing the epitaxial wafer including epitaxially growing a semiconductor layer on the silicon-based substrate after applying terrace processing to an outer peripheral portion of the silicon-based substrate. As a result, the method of manufacturing the epitaxial wafer having the epitaxial layer on the silicon-based substrate in which an epitaxial wafer which is completely free from cracks can be obtained, is provided.

Method of manufacturing epitaxial wafer and silicon-based substrate for epitaxial growth

A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a silicon carbide substrate and a protective film covering at least partly a main surface of the silicon carbide substrate and one or more side surfaces of the silicon carbide substrate. Therefore, contact of the side surface of the silicon carbide substrate with the moisture gathering material may be avoided, and the breakdown behavior and the long-term reliability of the semiconductor device may be further improved.

Semiconductor device and method for manufacturing the semiconductor device

A semiconductor device and a method for forming the semiconductor device. The semiconductor device includes a first semiconductor region having a first conductivity type; and a second semiconductor region having a second conductivity type. The first semiconductor region is configured within the second semiconductor region and a plurality of crystal defects are formed in the second semiconductor region and at least part of the first semiconductor region is surrounded by the plurality of crystal defects. Therefore, recombination of charge carriers (electrons and holes) on a lateral direction and a longitudinal direction could be taken into account, and the switching time of the semiconductor device could be adequately decreased.

A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a silicon carbide drift layer, a buried silicon carbide layer and an oxide semiconductor layer; the buried silicon carbide layer is located within the silicon carbide drift layer and the buried silicon carbide layer is covered by the oxide semiconductor layer. Therefore, breakdown behavior and/or long-time reliability of the semiconductor device may be further improved.

An epitaxial substrate for electronic devices, including: a Si-based substrate; an AlN initial layer provided on the Si-based substrate; and a buffer layer provided on the AlN initial layer, wherein the roughness Sa of the surface of the AlN initial layer on the side where the buffer layer is located is 4 nm or more. As a result, an epitaxial substrate for electronic devices, in which V pits in a buffer layer structure can be suppressed and longitudinal leakage current characteristics can be improved when an electronic device is fabricated therewith, is provided.

Epitaxial substrate for electronic devices, electronic device, method for producing the epitaxial substrate for electronic devices, and method for producing the electronic device

A method for manufacturing a semiconductor substrate, the semiconductor substrate including: a substrate; an initial layer provided on the substrate; a high-resistance layer provided on the initial layer which is composed of a nitride-based semiconductor and contains carbon; and a channel layer provided on the high-resistance layer which is composed of a nitride-based semiconductor, and at a step of forming the high-resistance layer, a gradient is given to a preset temperature at which the semiconductor substrate is heated, and the high-resistance layer is formed such that the preset temperature at the start of formation of the high-resistance layer is different from the preset temperature at the end of formation of the high-resistance layer. It is possible to provide the method for manufacturing a semiconductor substrate, which can reduce a concentration gradient of carbon concentration in the high-resistance layer and also provide a desired value for the carbon concentration.

Method for manufacturing semiconductor substrate, method for manufacturing semiconductor device, semiconductor substrate, and semiconductor device

Provided is a highly reliable semiconductor device that uses a thick passivation layer. The protective film is formed so as to cover mostly the entire surface of a semiconductor substrate, and is open only in an area of part that is above a metal wiring layer (connection area). The passivation layer includes starting from the bottom side, a first silicon nitride film that includes silicon nitride (SiN), a silicon oxide film that includes silicon oxide (SiO), and an organic film (organic layer) that includes a polyimide. The silicon oxide film and organic film are formed so as to cover the electrode layer (metal wiring layer) except the top of the insulation layer and the connection area, however, the first silicon nitride film is formed only on the insulation layer and not formed on the electrode layer.

Semiconductor device

A semiconductor device includes a semiconductor substrate, which includes: a drift region that has a first conductivity type; a body region that has a second conductivity type and is formed on the drift region; and an impurity region that has the first conductivity type and is formed inward from a surface of the body region. The semiconductor device further includes a trench, which is formed on a front surface of the semiconductor substrate and reaches the drift region; a control electrode, which is formed in the trench; an oxide film, which is formed between an inner wall of the trench and the control electrode; an electrode, which is connected to the impurity region; and a transistor, which includes a nitride film formed on the front surface of the semiconductor substrate excluding an upper side of the control electrode and a formation position of the electrode, in the semiconductor substrate.

Semiconductor device with a gate insulating film formed on an inner wall of a trench, and method of manufacturing the same

A silicon-based substrate on which a nitride compound semiconductor layer is formed on a front surface thereof, including a first portion provided on the front surface side which has a first impurity concentration and a second portion provided on an inner side of the first portion which has a second impurity concentration higher than the first impurity concentration, wherein the first impurity concentration being 1&#xd7;10atoms/cmor more and less than 1&#xd7;10atoms/cm. Consequently, there is provided the silicon-based substrate in which the crystallinity of the nitride compound semiconductor layer formed on an upper side thereof can be maintained excellently while improving a warpage of the substrate.

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Niiza, Japan

Hiroshi Shikauchi