Canon Kabushiki Kaisha

Fuji Xerox Co., Ltd.

Fuji Xerox Corporation

Hiroshi Sekine

Yusuke Onuki

Masahiro Kobayashi

Kazunari Kawabata

Kazuman Taniuchi

Kazuhiro Morimoto

Hiroyuki Kawano

Mahito Shinohara

Yoshihiro Terada

Katuyuki Kouno

Takeshi Ichikawa

Takeshi Kunimasa

Takanobu Otsubo

Kiyomasa Endoh

Junji Iwata

Hajime Ikeda

Masaaki Minowa

Takafumi Miki

Kazuyasu Sasuga

Masami Kurata

Masao Morita

Kunihiko Kobayashi

Toshiya Koyama

Yasuhiko Iwamoto

Toru Hada

Yozo Yamaguchi

Mikihiro Mori

Isao Kuwahara

Kenichi Ishida

Fumihiko Shibata

Toru Koizumi

Osamu Nakamura

Akira Ishii

Hiroaki Sano

Taro Kato

Yu Maehashi

Hideki Moriya

Hisashi Takado

Kenji Ogi

Kunikazu Ueno

Takahiro Yamasaki

Masahiro Ishiwata

Noriyuki Kurabayashi

Noboru Akita

Hiroyuki Kaneko

Yumi Sekiguchi

Toshio Kurogane

Sadao Furuoya

Shigeru Tsukimura

Masato Fukuda

Yoshio Ichiyanagi

Hideki Baba

Hiroyuki Tsuchiya

Nagaoka Daiji

Yoichi Nagasato

Kiyomasa Endo

Aymantarek Abdelghafar

A photoelectric conversion apparatus includes a semiconductor layer having an avalanche photodiode, and a wiring structure electrically connected to the semiconductor layer. In a plan view, the photoelectric conversion apparatus comprises a pixel region including the avalanche photodiode, and a peripheral region located between the pixel region and an outer edge of the photoelectric conversion apparatus. A third wiring layer is located between a first wiring layer and a second wiring layer. The first wiring layer includes, in the peripheral region, a first conductive part for transmitting an anode potential of the avalanche photodiode. The second wiring layer includes, in the peripheral region, a second conductive part for transmitting a second potential different from the anode potential. The first conductive part and the second conductive part overlap in the plan view.

Photoelectric conversion apparatus and photoelectric conversion system

A photoelectric conversion apparatus includes a first semiconductor layer having a photoelectric conversion element, a second semiconductor layer including circuitry for processing a signal based on a charge obtained by the photoelectric conversion element, a first wiring structure electrically connected to the first semiconductor layer, a second wiring structure electrically connected to the second semiconductor layer, and a coupling part that couples the first wiring structure to the second wiring structure. In a plan view, the apparatus includes a pixel region having the photoelectric conversion element, and a peripheral region located between the pixel region and an outer edge of the photoelectric conversion apparatus. The first wiring structure includes, in the peripheral region, a first conductive part having a mesh-shaped part. The first conductive part is connected to a pad facing outside the photoelectric conversion apparatus.

A photoelectric conversion device includes a connecting portion that electrically connects a contact plug of anode wiring and the second semiconductor region of the isolation portion. The connecting portion includes a third semiconductor region of the second conducting type that is connected to the contact plug of the anode wiring, and a fourth semiconductor region of the second conducting type that is disposed between the third semiconductor region and the second semiconductor region. The impurity concentration of the third semiconductor region is higher than the impurity concentration of the second semiconductor region and the impurity concentration of the fourth semiconductor region is lower than the impurity concentration of the third semiconductor region. With respect to a direction in which the APDs are arrayed, the width of the isolation portion is smaller than the width of the connecting portion.

Photoelectric conversion device, photoelectric conversion system, and equipment

An apparatus includes a plurality, of avalanche diodes disposed in a layer having a first surface and a second surface opposite the first surface, wherein the plurality of avalanche diodes each includes a first region of first conductivity type located at a first depth, a second region of second conductivity type located at a second depth greater than the first depth with respect to the second surface, and a third region of the second conductivity type located at a third depth greater than the second depth with respect to the second surface, wherein the layer includes a plurality of structures disposed in the first surface, and wherein the plurality of structures has an effective period less than hc/E(h: Planck's constant [J·s], c: speed of light [m/s], and E: a band gap of a substrate [J].

Photoelectric conversion apparatus

A photoelectric conversion element provided in a semiconductor layer having first and second surfaces includes a first region of a first conductivity type, a second region of a second conductivity type closer to the second surface than the first region and forming a p-n junction with the first region, a third region of the first conductivity type closer to the second surface than the second region, a fourth region of the second conductivity type closer to the second surface than the third region, a fifth region of the second conductivity type between the third fourth regions, and a sixth region of the second conductivity type surrounding a region where the first, second, third, and fifth regions are disposed in a plan view. The fifth region has an area smaller than that of the third region in the plan view, and overlaps with the first region in the plan view.

Photoelectric conversion element and photoelectric conversion device

A processing apparatus includes a first storage unit for storing first array data that is based on output values of a plurality of pixels arranged in an array, a second storage unit having second array data stored therein to be used for correction of the output values from the plurality of pixels, and a correction unit including a calculation unit that corrects an output value of at least one pixel of the plurality of pixels based on the first array data and the second array data.

Processing apparatus and photoelectric conversion system

A photoelectric conversion device includes a substrate provided with pixels each including a photoelectric converter that accumulates charge generated by an incidence of light, a charge holding portion that holds charge transferred from the photoelectric converter, and an amplifier unit that includes an input node that receives charge transferred from the charge holding portion, a metal film disposed over a side of a first surface of the substrate so as to cover at least the charge holding portion, and a trench structure provided in the substrate on the side of the first surface of the substrate. The photoelectric conversion device is configured such that the light is incident from the side of the first surface of the substrate. The trench structure is disposed between the photoelectric converter and the charge holding portion of a first pixel.

Photoelectric conversion device having a substrate with pixels each including a photoelectric converter, a charge holding portion, and an amplifier unit

When a handover is performed, Wi-Fi setting is automatically changed from an inactive state to an active state. In a case where no user operation is performed within a prescribed time period, the Wi-Fi setting is returned from the active state to the inactive state.

Information processing apparatus, method of controlling information processing apparatus, and storage medium

A photoelectric conversion apparatus includes a photoelectric conversion portion, an amplification transistor having an input node, a first transfer transistor, a second transfer transistor arranged between the first transfer transistor and the input node, and a reset transistor connected to the input node. When electric charges are transferred from the photoelectric conversion portion to the input node, the photoelectric conversion apparatus switches a capacity value of the input node by controlling the second transfer transistor to be on or off.

Photoelectric conversion apparatus, photoelectric conversion system, and moving body

A photoelectric conversion apparatus comprises a semiconductor layer including a first surface and a second surface, a first semiconductor region of a first conductivity type arranged in the semiconductor layer and configured to accumulate a signal charge generated by incident light, a second semiconductor region of the first conductivity type arranged in the semiconductor layer, a first transfer electrode configured to transfer the signal charge accumulated in the first semiconductor region to the second semiconductor region, a third semiconductor region of a second conductivity type arranged between the second semiconductor region and the second surface, and a fourth semiconductor region of the second conductivity type arranged between the third semiconductor region and the second surface. The third semiconductor region at least partially overlaps, in orthographic projection to the first surface, the second semiconductor region and the fourth semiconductor region.

Photoelectric conversion apparatus, image sensor, semiconductor apparatus, photoelectric conversion system, and equipment

A system that can acquire a larger amount of information is provided. In the disclosure, calculation processing is performed on a data set including a plurality of pieces of data each including light amount distribution information on a two-dimensional plane that is acquired by a detection unit and time information indicating a time at which the light amount distribution information is acquired. In the calculation processing, among vectors in traveling directions of observation target light, a vector component in a direction orthogonal to the two-dimensional plane is estimated from the data set.

Light detection system

An information processing system that is configured such that a plurality of speakers are coordinated with one information processing apparatus and is capable of coping with a state of competition between instructions to the speakers. An information processing system includes an image forming apparatus, a first voice control device that receives a voice instruction to the image forming apparatus, and a second voice control device that receives a voice instruction to the image forming apparatus. The image forming apparatus is controlled to execute a job based on information on which of the first voice control device and the second voice control device is a device which is to be preferentially used.

Information processing system capable of connecting a plurality of voice control devices, method of controlling information processing system, and storage medium

A photoelectric conversion apparatus comprises a first semiconductor region of a first conductivity type arranged between a first surface and a second surface, a second semiconductor region of the first conductivity type arranged between the first surface and the second surface and configured to accumulate a signal charge generated by incident light, a third semiconductor region of the first conductivity type arranged between the first surface and the second surface, a fourth semiconductor region of the first conductivity type arranged between the first surface and the second surface and in contact with the third semiconductor region, a first transfer electrode arranged on the first surface, a semiconductor region of the second conductivity type arranged between the third semiconductor region and the second surface, and a semiconductor region of the second conductivity type arranged between the fourth semiconductor region and the second surface.

Photoelectric conversion apparatus, solid-state image sensor and device

In an imaging device, a photoelectric converter of a first pixel and a photoelectric converter of a second pixel are arranged along a first direction. At least part of a charge accumulation portion of the first pixel is disposed between the photoelectric converter of the first pixel and the photoelectric converter of the second pixel. An exit surface of a light guiding path of the first pixel is longer in a second direction orthogonal to the first direction in plan view than in the first direction.

Imaging device and imaging system

Growing community of inventors

Kawagoe, Japan

Hiroshi Sekine