Fujitsu Corporation

Hiroshi Sekiguchi

Makoto Kondo

Chikashi Anayama

Akira Furuya

Toshiyuki Tanahashi

Mami Sugano

Kay Domen

A semiconductor laser includes a patterned semiconductor substrate including a lower flat plane portion, an upper flat plane portion, and a stripe-shaped slant plane portion connecting the lower flat plane portion and the upper flat plane portion, an active layer formed on the semiconductor substrate, an upper cladding layer formed on the active layer, current blocking layers formed on portions of the cladding layer, the portions respectively corresponding to the lower flat plane portion to the upper flat plane portion; and a current channel region formed on a portion of the upper cladding layer corresponding to the slant plane portion. There are satisfied relations t1&gt;t2 and tan.sup.-1 (2t1/W).ltoreq..theta.+.phi.&lt;90.degree., where t2 is thickness of the flat plane portions of the upper cladding layer, t1 is thickness of the slant plane portion of the upper cladding layer, .theta. is an angle formed between a boundary between the lower flat plane portion and the slant plane portion and a bottom plane of the lower flat plane portion, .phi. is an angle formed between a bottom plane of the slant plane portion and extension of the bottom plane of the lower flat plane portion, and W is width of the stripe of the slant plane portion of the active layer.

Method for forming semiconductor laser emitting light from slant plane

A method for fabricating a laser diode, comprises the steps of: forming a first stripe structure defined by a plurality of crystallographically distinct surfaces on a surface of a semiconductor substrate; forming an epitaxial layer of InGaAlP on the semiconductor substrate including the first stripe structure by a decomposition of gaseous source materials of In, Ga, Al and P; wherein the InGaAlP layer is doped to the p-type by incorporating Mg while growing the InGaAlP by adding a gaseous source material of Mg into said source materials of In, Ga, Al and P such that the InGaAlP layer is doped to the p-type with a substantially uniform carrier concentration level irrespective of the crystal surfaces forming the stripe structure.

Stripe laser diode having an improved efficiency for current confinement

A crystal of a compound semiconductor is deposited on a substrate using a metal organic vapor phase epitaxy within a reaction enclosure having a vertical flow of deposition gas supplied through a gas injector within the deposition enclosure. The deposition gas is supplied in a plurality of divided flow paths in which the flow rates are individually controlled. The injector comprises a plurality of gas jet ports which receive respective, plural flow paths and which are disposed in a two-dimensional array having dimensions corresponding to the two-dimensional main surface dimensions of the substrate thereby to supply a uniform flow of deposition gas over the entire two-dimensional main surface of the substrate. The method and apparatus have special application in the deposition of quaternary III--V compound semiconductor.

Method for depositing compound semiconductor crystal

Apparatus for depositing compound semiconductor crystal

Growing community of inventors

Kawasaki, Japan

Hiroshi Sekiguchi