Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Hiroshi Seki

Masaru Odagiri

Hideyuki Ueda

Mikio Murai

Kenji Kuwahara

Kiyosi Takahasi

Kiyoshi Takahashi

Sadayuki Okazaki

Shunsaku Muraoka

Kenji Hasegawa

Masafumi Shimotashiro

Satoru Mitani

Koichi Osano

Masaru Higashionji

Yukikazu Ohchi

A radio-type transmitting device capable of transmitting information other than information in an internal memory is provided. A RFID tag includes a encoding circuit for digitalizing receiving sensitivity of a radio wave sent from an external transmitting/receiving apparatus and then sending the digitalized receiving sensitivity to the external transmitting/receiving apparatus. Thus, the external transmitting/receiving apparatus can obtain a distance between the external transmitting/receiving apparatus and the RFID tag based on received sensitivity information.

Radio-type transmitting device, container, transmitting/receiving system and transmitting/receiving method

An electric element includes: a first electrode (); a second electrode (); and a layer () connected between the first electrode and the second electrode and having a diode characteristic and a variable resistance characteristic. The layer () conducts a substantial electric current in a forward direction extending from one of the first electrode () and the second electrode () to the other electrode as compared to a reverse direction opposite of the forward direction. The resistance value of the layer () for the forward direction increases or decreases according to a predetermined pulse voltage applied between the first electrode () and the second electrode ().

Electric element, memory device, and semiconductor integrated circuit formed using a state-variable material whose resistance value varies according to an applied pulse voltage

First electrode layer includes a plurality of first electrode lines (W, W) extending parallel to each other. State-variable layer lying on the first electrode layer includes a plurality of state-variable portions (----) which exhibits a diode characteristic and a variable-resistance characteristic. Second electrode layer lying on the state-variable layer includes a plurality of second electrode lines (B, B) extending parallel to each other. The plurality of first electrode lines and the plurality of second electrode lines are crossing each other when seen in a layer-stacking direction with the state-variable layer interposed therebetween. State-variable portion (-) is provided at an intersection of the first electrode line (W) and the second electrode line (B) between the first electrode line and the second electrode line.

Memory device and semiconductor integrated circuit

A ferromagnetic metal thin film recording medium having a nonmagnetic substrate, a ferromagnetic metal thin film formed on the nonmagnetic substrate, a dry etched layer which is formed in a surface layer of the ferromagnetic metal thin film and contains oxygen atoms in a higher concentration than the remaining part of the ferromagnetic metal thin film, a hard carbonaceous film formed on the dry etched layer of the ferromagnetic metal thin film, a lubricant layer formed on said hard carbonaceous film, and optionally a modified layer which is formed on the hard carbonaceous film and has a thickness of less than 3 nm, and comprises carbon, nitrogen and oxygen atoms with an atomic ratio of nitrogen to carbon being at least 0.8%, which recording medium has improved running stability, durability and weatherability while maintaining electromagnetic conversion characteristics.

Method for producing a magnetic recording medium having a carbon

A magnetic recording medium of the present invention includes: a non-magnetic substrate; a ferromagnetic thin metal layer formed on the non-magnetic substrate; and a carbon layer and a lubricant layer in contact with the carbon layer, which is formed above the ferromagnetic thin metal layer so that the lubricant layer is an outermost layer, wherein the carbon layer contains nitrogen atoms, a Raman spectrum of the carbon layer has a peak A in the range of about 1310 to about 1410 cm.sup.-1 and a peak B in the range of about 1520 to about 1570 cm.sup.-1, and a ratio of integrated intensities of the peak A to the peak B is in the range of about 1.2 to about 2.0.

Magnetic recording medium having a carbon protective film containing

A magnetic recording medium comprising a non-magnetic substrate, a ferromagnetic thin film on the non-magnetic substrate, a hard carbon film on the ferromagnetic thin film, a modified layer of which atomic ratio of nitrogen/carbon is 0.8% or more, and of which thickness is less than 3 nm on the hard carbon film, and a lubricant layer on the modified layer, has excellent electromagnetic conversion characteristic, running stability, durability, and weatherability.

Magnetic recording medium and its manufacturing method

Magnetic recording medium having a ferromagnetic metal thin film, a dry

A magnetic recording media comprising a non-magnetic substrate, a ferromagnetic thin film on the non-magnetic substrate, a hard carbon film on the ferromagnetic thin film, a modified layer of which atomic ratio of nitrogen/carbon is 0.8% or more, and of which thickness is less than 3 nm on the hard carbon film, and a lubricant layer on the modified layer, has excellent electromagnetic conversion characteristic, running stability, durability, and weatherability.

Method of manufacturing a magnetic recording medium

A magnetic recording medium comprising a back coating layer formed on a surface reverse to a magnetic layer and a carbonaceous film which is formed on the back coating layer and contains fluorine atoms and silicon atoms and/or nitrogen atoms and in which a concentration of fluorine atoms decreases in a depth direction from a surface of the carbonaceous film, while a concentration of the silicon and/or nitrogen atoms increases in the depth direction from the surface of the carbonaceous film, which recording medium has improved running stability, durability and weatherability while electromagnetic conversion characteristics are maintained.

Method for forming film by plasma CVD

A magnetic recording medium comprising a non-magnetic substrate, a ferromagnetic metal film formed on said non-magnetic substrate, a carbon film which is formed on said ferromagnetic metal film and in which a concentration of at least one element selected from the group consisting of silicon, phosphorus, sulfur, tin and indium is or concentrations of boron and at least one element selected from the group consisting of tin and indium are decreased in a depth direction from the surface of said carbon film, and a lubricant layer formed on said carbon film, which medium has improved running durability and corrosion resistance.

Growing community of inventors

Katano, Japan

Hiroshi Seki