Mitsubishi Denki Kabushiki Kaisha

Hiroshi Sawano

Hitoshi Toda

Yasuhiro Murasawa

Hideya Yagoura

Osamu Ishihara

Tetsurou Mori

A semiconductor device mounted on a substrate. Outer leads, partially resin-molded, have a greater height above the mounting surface than that of a conventional device. Specifically, each lead projecting from the molded resin has a bent portion which is convex in the direction opposite to the mounting surface, and the length of the lead beyond the bent portion is greater than the distance from the lead portion adjacent to the resin portion of the lead to the mounting surface. The long leads improve reliability during, e.g., heat cycle, tests. In another embodiment, outer leads, partially resin-molded, have reverse J-shaped bent portions, each with a distal end positioned away from the resin. When the bent portions serve as soldering portions, the soldering condition can be easily checked.

Semiconductor device

A microwave oscillator including a GaAs field effect transistor having a gate electrode, a drain electrode and a source electrode and disposed on a planar substrate. An elongated gate transmission line is connected to the gate electrode of the field effect transistor and disposed on the substrate and terminated by a matching impedance. An elongated drain transmission line is connected to the drain electrode of the field effect transistor and disposed on the substrate at a predetermined angle to the gate transmission line while an elongated source transmission line is connected to the source electrode and disposed on the substrate for providing the oscillating output. A dielectric resonator is disposed within an angle formed between the gate transmission line and the drain transmission line.

Growing community of inventors

Itami, Japan

Hiroshi Sawano