Kabushiki Kaisha Toshiba

Hiroshi Sawano

Masataka Nanba

Norihide Funato

Satoshi Nakao

Yoshiaki Imaji

A semiconductor device is provided including a semiconductor element having a plurality of electrodes, a plurality of bonding portions of a lead frame, a plate-like current path material which electrically connects at least one of the plurality of electrodes and one of the plurality of bonding portions, a housing which packages the semiconductor element having the plurality of electrodes, the plurality of bonding portions of the lead frame, and the current path material, wherein the plate-like current path material is arranged to be directly bonded to one of the plurality of electrodes and one of the plurality of bonding portions, and the middle portion of the current path material is formed apart from the surface of the semiconductor element. A method of manufacturing the same is also provided.

Semiconductor device and method of manufacturing the same

In the present invention, a heat spreader, circuit boards for power semiconductor elements, and a circuit board for a control circuit are fixed on a metal plate. The heat spreader is made of an IMS. The IMS has a metal base made of Cu or Cu clad plate, and a high heat radiating insulating layer made of a resin-based material, and the metal plate and the heat spreader are adhered by the high heat radiating insulation layer and electrically insulated from each other. Only a power semiconductor element is soldered onto the heat spreader. A wiring pattern for guiding each terminal of the power semiconductor element to the outside is formed on a power circuit board. A control circuit for controlling the power semiconductor element is formed on the circuit board for the control circuit.

Growing community of inventors

Chiba, Japan

Hiroshi Sawano