National Institute of Advanced Industrial Science and Technology

Fuji Electric Co., Ltd.

Agency of Industrial Science and Technology

Japan Science and Technology Agency

Ministry of International Trade & Industry

Hiroshi Sato

Hiroshi Akoh

Masashi Kawasaki

Yoshinori Tokura

Yoshinori Murakami

Yoshio Kaneko

Shinji Sato

Fumiki Kato

Hiroyuki Yamada

Hidekazu Tanisawa

Hiroki Takahashi

Yuji Ishii

Yoshiro Shimojo

Kenichi Koui

Tadashi Sekiya

An object of the present invention is to stabilize and strengthen the strength of a bonding part between a metal electrode on a semiconductor chip and metal wiring connected thereto using a simple structure. Provided is a semiconductor device including a metal layeron a surface of a metal electrodeformed on a semiconductor chip, the metal layerconsisting of a metal or an alloy different from a constituent metal of the metal electrode, metal wiringis connected to the metal layervia a bonding part, wherein the constituent metal of the metal layeris a metal or an alloy different from the constituent metal of the metal electrode, and the bonding parthas an alloy region harder than the metal wiring

Bonding pad structure of a semiconductor device

A tunnel junction device capable of controlling its spin retention is provided. The tunnel junction device includes a LaSrMnOelectrode (), a LaSrMnRuOelectrode (), both as ferromagnetic (including ferrimagnetic) metal materials, and a LaAlO(electrically insulating layer) () arranged between the two electrodes () and ().

Tunnel junction device

A PZT fiber is formed by using a titanium wire or a heat-resistant metal wire made of platinum or the like, as a core wire, and overlaying PZT crystals on a surface of the wire. A smart board utilizing the PZT fiber is formed by embedding the PZT fiber into a conductive composite material layer made of carbon fiber reinforced plastic or the like. An actuator utilizing the smart board is constituted by applying a voltage between the PZT fiber and the conductive composite layer of the smart board.

Lead zirconate titanate fiber, smart board using lead zirconate titanate fiber, actuator utilizing smart board, and sensor utilizing smart board

An anisotropic superconductor junction device consisting of a lower superconducting layer and an upper superconducting layer separated by a barrier layer, in which the upper and lower superconducting layers and the barrier layer each have a (103) crystal orientation in which the c axis is arranged in the same direction at an angle of 45 degrees relative to the plane of the junction.

Anisotropic superconducting device and fluxon device

Growing community of inventors

Tsukuba, Japan

Hiroshi Sato