Matsushita Electric Industrial Co., Ltd.

Hiroshi Satani

Tsuyoshi Uemura

Naomi Kaneko

Kazuo Inoue

Mikihiko Nishitani

Naohide Wakita

Katsuhiko Kumagawa

Hiroyuki Yamakita

Masashi Goto

Ichiro Sato

Masanori Kimura

Masumi Izuchi

Akinori Shiota

Hideaki Mochizuki

Hiroshi Tsutsu

Keizaburo Kuramasu

Yoshinao Taketomi

Satoshi Asada

Hikaru Nishitani

Yoshiko Mino

Shoichi Ishihara

Takaiki Nomura

Hirofumi Kubota

Masakazu Uekita

Hirofumi Wakemoto

Katsuji Hattori

Tooru Tamura

Keisuke Tsuda

Makoto Murata

Kazuhiro Johten

Hiroyuki Onishi

The present invention provides a method of forming a transparent conductive film at a low temperature that is suitable for use with a synthetic resin substrate. According to the production method of a substrate with an electrode of the present invention, an oxide conductive film composed of an amorphous material or mainly composed of an amorphous material is formed on a substrate at a temperature equal to or less than the crystallization temperature of the film, and subsequently, the formed oxide conductive film is crystallized by heating. The oxide conductive film is processed into the shape of an electrode either before or after crystallization, according to necessity.

Substrate with an electrode and method of producing the same

A liquid crystal display panel comprises a liquid crystal layer sandwiched between a first resin substrate and a second resin substrate, a first electrode and a second electrode provided over respective opposed surfaces of the first and second resin substrates, and a first insulating film provided between the first electrode and the liquid crystal layer. The product of the film stress of the first electrode multiplied by the film thickness thereof is smaller than the product of the film stress of the second electrode multiplied by the film thickness thereof.

Liquid crystal display panel and method of fabricating the same

In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate . In the insulation layer, a lower insulation layer , which is in contact with the transparent insulating substrate , is made to have a higher thermal conductivity than an upper insulation layer . Thereafter, the upper insulation layer is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer . Thus, the amorphous silicon thin film is formed into a polycrystalline silicon thin film

Semiconductor thin film, method and apparatus for producing the same, and semiconductor device and method of producing the same

A method for manufacturing an image display element having a resin substrate that holds a display functional portion on which images are displayed, having: an inorganic film forming step of forming inorganic films on both surfaces of the resin substrate, and a dehydration step of dehydrating the resin substrate before or after the inorganic film forming step, wherein the resin substrate subjected to the inorganic film forming step and the dehydration step and an other substrate are bonded to each other by a sealing material, and then the sealing material is cured by heating at least the resin substrate.

Method and apparatus for manufacturing optical resin substrate, method and apparatus for manufacturing liquid crystal display element using it, and liquid crystal display device using it

A liquid crystal display comprises an array substrate in which a common electrode, a pixel electrode, a scanning signal line, a video signal line and a semiconductor switching element are provided, an opposed substrate, and a liquid crystal layer interposed between the array substrate and opposed substrate. The line width of at least either the common electrode or the pixel electrode is larger than the distance between the common electrode and the pixel electrode. The film thickness of at least one of the common electrode and the pixel electrode is larger than the thickness of at least either the scanning signal line or the video signal line. As a result, an inplane electric field liquid crystal display having a wide viewing angle, high-speed response, and high image quality such as high luminance is provided.

Liquid crystal display with special electrode configurations and compositions and method for producing the same

A liquid crystal display comprises an array substrate in which a common electrode, a pixel electrode, a scanning signal line, a video signal line and a semiconductor switching element are provided, an opposed substrate, and a liquid crystal layer interposed between the array substrate and opposed substrate. The line width of at least either the common electrode or the pixel electrode is larger than the distance between the common electrode and the pixel electrode. The film thickness of at least one of the common electrode and the pixel electrode is larger than the thickness of at least either the scanning signal line or the video signal line. As a result, an in-plane electric field liquid crystal display having a wide viewing angle, high-speed response, and high image quality such as high luminance is provided.

Liquid crystal display with opaque common electrodes over the video signal lines and fabrication method thereof

Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same

An active matrix type of twisted nematic liquid crystal display is provided with a lower alignment layer rubbed in rubbing directions RD3, RD4 opposite to each other, an upper alignment layer rubbed in rubbing directions RD5, RD6 opposite to each other, a liquid crystal layer arranged between the lower and upper alignment layers and filled with liquid crystal molecules set in a nematic liquid crystal phase, a pixel electrode and a common electrode for inducing a vertical electric field in the liquid crystal layer, and a source line and gate line driving a switching device for applying an electric potential to the pixel electrode. The rubbing direction on the substrate with the switching device is at an angle of 1.degree.-44.degree. to either the source or gate line. In this case, major axes of a group of liquid crystal molecules arranged above the pixel electrode are twisted in a clockwise direction, and major axes of other group of liquid crystal molecules are twisted in a counterclockwise direction.

Active matrix twisted nematic liquid crystal display with rubbing

This invention prevents a time-course deterioration of characteristics of a liquid crystal panel and dramatically increases the life of the panel by using a ferroelectric liquid crystal composition in which a proper amount of aliphatic amine or epoxy compound is added to a ferroelectric liquid crystal material.

Ferroelectric liquid crystal composition and liquid crystal display

A liquid crystal device is disclosed wherein a pair of liquid crystal supporting plates each having a molecular alignment controlling film formed thereon through the Langmuir-Blodgett method singly orlaminatedly a monomolecular film having as a main component a polyamide compound having a long-chain alkyl substituent in its side chain and a property to overspread a surface of water to form a monomolecular film is oppositely held via a spacer which is adhered on the side on which the molecular alignment controlling film is formed, and a liquid crystal material is injected and held into the space produced between the films thus oppositely held to each other thereby to align the molecules of liquid crystal to the azimuth parallel to the dipping direction of the substrate. A liquid crystal device thus manufactured exhibits a uniform and indefective molecular alignment condition.

Liquid crystal device

Growing community of inventors

Yawata, Japan

Hiroshi Satani