Kabushiki Kaisha Toshiba

Hokuriku Seikei Industrial Co., Ltd.

Hiroshi Sanda

Makoto Saito

Michito Miyahara

Hideo Eto

Masahiro Okesaku

Shinya Ito

Yukio Okudo

Eiichi Nagumo

A silicon carbide member for a plasma processing apparatus is obtained by mixing an &#x3b1;-silicon carbide powder having an average particle size of 0.3 to 3 &#x3bc;m, with an amount of metal impurities in the &#x3b1;-silicon carbide powder reduced to 20 ppm or less, and a sintering aid comprising BC in amount of 0.5 to 5 weight parts or AlOand YOin total amount of 3 to 15 weight parts; sintering a mixture of the &#x3b1;-silicon carbide powder and the sintering aid in an argon atmosphere furnace or a high-frequency dielectric heating furnace; and then processing the resulting sintered body. The resulting silicon carbide member for a plasma processing apparatus is low cost and durable.

Silicon carbide member for plasma processing apparatus

An electrostatic chuck includes a first electrode provided in a first plane, a second electrode provided in a second plane parallel to the first plane, and an insulator. The second electrode includes a plurality of portions which intersect with an intersection line between a region in which the first electrode is orthogonally projected to the second plane and a third plane vertical to the second plane. The insulator is provided between the first and second electrodes.

Electrostatic chuck and semiconductor manufacturing apparatus

Growing community of inventors

Ishikawa, Japan

Hiroshi Sanda