Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Hiroshi Sakoh

Nobukazu Teranishi

Masato Kobayashi

Yasuo Takeuchi

Yoshiaki Nishi

Hiroshi Okamoto

Kazuhiro Yamashita

Mitsuo Yasuhira

Ryoichi Nagayoshi

Yuichi Hirofuji

Haruhisa Yokoyama

A solid-state imaging device according to the present invention is of a MOS type and includes a plurality of pixels arranged in rows and columns, and includes: a semiconductor substrate; a photodiode which is formed in the semiconductor substrate and converts, into a signal charge, light that is incident from a first main surface of the semiconductor substrate; a transfer transistor which is formed in a second main surface of the semiconductor substrate and transfers the signal charge converted by the photodiode; a light shielding film which is conductive and formed on a boundary between the pixels, above the first main surface of the semiconductor substrate; an overflow drain region electrically connected to the light shielding film and formed in the first main surface of the semiconductor substrate; and an overflow barrier region formed between the overflow drain region and the photodiode.

Solid-state imaging device

Provided is a solid-state imaging device that realizes sensitivity improvement while maintaining flare prevention effect even when miniaturization of cell is advanced. The solid-state imaging device according to the present invention includes: light receiving units formed on a semiconductor substrate; an antireflection film arranged above the semiconductor substrate, except above the light receiving units; and microlenses arranged above the light receiving units, in which the antireflection film is formed at a position equal to or higher than a position of the microlenses.

Method for manufacturing solid-state imaging device having improved sensitivity and reduced flare

Solid-state imaging device having improved sensitivity and reduced flare

A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.

Solid-state image sensor, manufacturing method for solid-state image sensor, and camera

A solid-state image sensor having unit pixel cells arranged in a matrix form, each unit pixel cell having a photoelectric conversion element formed on a semiconductor substrate, a color filter formed on the photoelectric conversion element and a micro-lens formed on the color filter, where a thickness of the color filter is greater in the center than in the periphery. Further, the color filters adjoin in vertical and horizontal directions in the arrangement of the unit pixel cells. A cross-sectional shape of the color filter is, for example, triangular, trapezoidal, convex, lens-shaped or semielliptic.

Solid-state image sensor and method of manufacturing thereof

A solid-state image sensor of the present invention is a solid-state image sensor in which pixel cells are arranged on a semiconductor substrate, wherein each of the pixel cells includes: a photoelectric conversion unit that performs photoelectric conversion of incident light; and a microlens formed above the photoelectric conversion unit, the microlens corresponding to the photoelectric conversion unit, wherein the microlens includes a transparent layer and a color filter layer.

Solid-state image sensor, method of manufacturing the same, and camera

Solid-state image sensor having micro-lenses arranged to collect light of which the incidence angle has been moderated by a transparent film disposed thereon

In a manufacturing method of an image sensor, a lightproof film (an antireflective film for avoiding flares) is formed over a wiring area; a transparent film is formed over an imaging area using a material capable of patterning; a transparent film, for forming micro lenses on top, is formed on the transparent film, wherein a height of the top surfaces of the transparent film and the lightproof film are evenly formed.

Image sensor and manufacturing method of image sensor

Solid-state image sensor with transparent film on micro-lenses by which oblique light is refracted towards light receiving elements

Solid-state image sensor, manufacturing method for solid-state image sensor, and camera having an offsetting arrangement between light receiving elements and micro-lenses

Solid-state image sensor, manufacturing method for solid-state image sensor, and camera having plural color filters and dual transparent film

Solid state image sensor with transparent film on micro-lenses and offsetting positions of micro-lenses and color filters from a central portion of a corresponding light receiving area

Growing community of inventors

Kyotanabe, Japan

Hiroshi Sakoh