Hitachi, Ltd.

Hitachi Displays, Ltd.

Panasonic Liquid Crystal Display Co., Ltd.

Hiroshi Saito

Yoshiaki Nakayoshi

Ken Ohara

Tsunenori Yamamoto

Jun Ooida

Yasumichi Suzuki

Shinji Sasaki

Mutsuko Hatano

Makoto Ohkura

Mikio Hongo

Naoki Mitsuishi

Akio Yazaki

Susumu Edo

Toshio Miyazawa

Shinichi Komura

Tetsuya Nagata

Hiroyuki Kobayashi

Naoyuki Tamura

Isao Shimizu

Mitsuaki Horiuchi

Susumu Aiuchi

Masatomo Terakado

Hisashi Kajiwara

Takahiro Miyazaki

Shunji Sasabe

Hideki Tateishi

Tamotsu Shimizu

Shozo Saekusa

Mitsumasa Satoh

Koichi Hashimura

Kenji Takechi

Shuuzoo Sano

Seiichi Katoh

Akira Ikuma

Kazuhiro Nakajima

Hiromasa Yamagata

A display device which can reduce easily the brightness unevenness produced by the insufficient writing of TFT, wherein, the display device having: a display panel which, over a surface of an insulating substrate, includes plural scanning signal lines; plural picture signal lines; plural TFTs; plural pixel electrodes coupled to sources of the TFTs; and a counter electrode, wherein the pixel and counter electrodes are arranged over the same surface of an insulating layer overlying the surface of the insulating substrate, and when a gate insulating film provided at one TFT among the TFTs is thinner than a gate insulating film provided at another TFT among the TFTs, a gap between a pixel electrode coupled to the source of the one TFT and the counter electrode is set to be wider than a gap between a pixel electrode coupled to the source of the another TFT and the counter electrode.

Display device wherein a value of a channel width divided by a channel length of one TFT is greater than another TFT, and a gap between a pixel electrode and a counter electrode is wider for the one TFT than the another TFT

In a display device of built-in driver circuit type including a non-rectangular image display area, the frame area surrounding the display area is reduced and the wiring delay is reduced. The image display device includes a plurality of pixels arranged in an orthogonal matrix form, a plurality of scanning wiring lines connected to the plural pixels, a plurality of signal wiring lines connected to the plural pixels, the signal wiring lines being disposed to construct an orthogonal matrix form with the plural scanning wiring lines; signal wiring internal circuits for driving the plural signal wiring lines, and an image display area including a plurality of pixels, the image display area having a non-rectangular outer contour. The signal wiring internal circuits are separated from each other in an extending direction of the signal wiring lines in a unit of length of the pixel.

Display device having particular pixels and signal wiring internal circuits

A display device comprising a plurality of scan signal lines; a plurality of picture signal lines three-dimensionally intersecting the plurality of scan signal lines; and numerous TFT elements arranged in a matrix; and having a display panel in which each of the TFT elements has a gate connected to one of the plurality of scan signal lines, and a drain or source connected to one of the plurality of picture signal lines; wherein the TFT elements respectively differ in terms of channel width, channel length, or both, depending on a distance from a signal input terminal of the scan signal line to which the gate is connected and a distance from a signal input terminal of the picture signal line to which one of the drain and the source is connected.

Display device

Display device wherein a gate insulating film provided at one TFT is thinner than a gate insulating film provided at another TFT, and a gap between a pixel electrode and a counter electrode is wider for the one TFT than the another TFT

The present invention provides a liquid crystal display device which can easily prevent the generation of longitudinal smear. The display device includes a display panel having a plurality of scanning signal lines, a plurality of video signal lines, a plurality of thin film transistors and a plurality of pixel electrodes arranged in a matrix array. In a state that a gap between two neighboring video signal lines with one pixel electrode out of the plurality of pixel electrodes sandwiched therebetween in a region where one pixel electrode is arranged is larger than a gap between two neighboring video signal lines with another pixel electrode different from one pixel electrode sandwiched therebetween in a region where another electrode is arranged, a size of one pixel electrode is set larger than a size of another pixel electrode.

Display device and manufacturing method thereof

The present invention provides a technique which can make an image quality on a screen of a TFT liquid crystal display device uniform. A liquid crystal display device includes a TFT substrate on which TFT circuits are arranged in an array, a counter substrate which is arranged to face a surface of the TFT substrate on which the TFTs are formed, and a liquid crystal material which is filled between the TFT substrate and the counter substrate, wherein in the TFT substrate, assuming a film thickness and a width of a conductive film of the gate electrode lines in a first region thereof as GLDand GLWrespectively, and a film thickness and a width of a conductive film of the gate electrode lines in a second region thereof which differs from the first region as GLDand GLWrespectively, when the relationship GLD&#x3c;GLDis established, the relationship GLW&#x3e;GLWis established.

Liquid crystal display device and display device

An amorphous silicon film on an insulating substrate portion to be formed as an individual display panel in a large-sized insulating substrate is irradiated with a continuous-wave (CW) solid-state laser beam condensed linearly, while being scanned therewith at a fixed speed in the width direction of the condensed laser beam. A pixel portion and a peripheral circuit portion in the same insulating substrate portion are irradiated with the laser beam temporally modulated to have a power density high enough to provide predetermined crystallinity. The amorphous silicon film is transformed into a silicon film having crystallinity corresponding to performance required for thin film transistors to be built in each of the pixel portion and the peripheral circuit portion. In such a manner, a thin film transistor circuit having optimum crystallinity required in the pixel or peripheral circuit portion can be obtained while high throughput is kept. Thus, a product having good display features as a display panel can be provided inexpensively.

Display panel and method for manufacturing the same

The whole surface of an insulating substrate having an amorphous silicon film formed thereon is scanned/irradiated with a solid-state pulsed laser beam shaped linearly or rectangularly, to form a uniform fine poly-crystalline silicon film for forming a pixel region. The periphery of the pixel region is scanned/irradiated with a time-modulated continuous-wave solid-state laser beam formed linearly. Thus, a peripheral circuit region including a drive circuit is formed as a poly-crystalline silicon film with crystals growing up in the scanning direction. Pixel portion thin film transistors are produced in the uniform fine poly-crystalline silicon film, while a drive circuit or an interface circuit is produced in the peripheral circuit region. One of substrates of a display panel is formed thus. A display panel including transistors with uniform properties in the pixel portion and transistors with excellent properties in the peripheral circuit portion including the drive circuit is obtained.

Method and apparatus for manufacturing display panel

A liquid crystal display device has on each pixel region at a liquid-crystal side of one of a pair substrates, a thin film transistor driven by scanning signals from a gate signal line, a pixel electrode to which video signals from a drain signal line are supplied through the thin film transistor, and a capacity element formed between the pixel electrode and a holding capacity electrode. The capacity element is formed such that a semiconductor layer forming the same layer as a semiconductor layer of the thin film transistor, a first insulation film forming the same layer as a gate insulation film of the thin film transistor, the holding capacity electrode, a second insulation film and a metal layer are sequentially. The semiconductor layers and the metal layer are connected to each other. The metal layer is formed as a reflector which occupies a portion of the pixel region.

Liquid crystal display device with reflector forming part of capacity element

Two up-counters and two down-counters having a time difference corresponding to a dead time are provided to realize an up-down symmetric count, such that the up-counters and the down-counters are made to count the lower limit and the upper limit (a 1/2 period+the dead time), the up-counter for counting a relatively large value and the down-counter for counting a relatively large value are made to contact at the upper limit, the up-counter for counting a relatively small value and the down-counter for counting a relatively small value are made to intersect at a count value corresponding to the 1/2 period, the up-counter for counting the relatively large value and the down-counter for counting the relatively large value are made to intersect at the count value corresponding to the dead time, and the up-counter for counting the relatively small value and the down-counter for counting the relatively small value are made to contact at the lower limit.

Microprocessor having timer circuit generating complementary

In a semiconductor integrated circuit device having an A/D converter incorporated therein, a plurality of input channels are provided and input analog signals supplied therefrom are respectively held by a plurality of sample-to-hold circuits. The analog signals are simultaneously sampled by using such a pipeline operation that a first sampling is performed so that an analog signal held by the first sampling is A/D-converted and a second sampling is performed so that an analog signal held by the second sampling is A/D-converted, and the plurality of sample-to-hold circuits.

Semiconductor integrated circuit device and control system

A plasma processing method for processing a thin film formed on a substrate or forming a thin film on a substrate within a vacuum vessel provides for supplying a gas into the vacuum vessel, producing a plasma in the vacuum vessel by applying a microwave to the gas, and creating a static magnetic field represented by magnetic lines of force parallel to the direction of propagation of the microwave in the vacuum vessel by a magnetic circuit. The field intensity of the static magnetic field is determined taking into consideration the frequency of the microwave so that the same is lower than the field intensity at which electron cyclotron resonance occurs. The magnetic flux density of the static magnetic field is determined, taking into consideration the frequency of the high-frequency wave or the microwave, so that the same is not lower than the magnetic flux density at which electron cyclotron resonance occurs, and the density of the plasma is determined so that the left-hand circularly polarized wave is cut off.

Plasma processing method and an apparatus for carrying out the same

A method of forming a thin film by a bias sputtering method using a first target made of a refractory metal mainly composed of W and a second target made of a conductive material mainly composed of a low-melting-point metal which comprises, upon sputtering the first target made of the refractory metal mainly composed of W, decreasing high energy particles incident to a substrate in a state where a desired bias voltage is applied to a substrate thereby forming a thin film of the refractory metal mainly composed of W with low resistivity and less stress and, subsequently, upon sputtering the second target made of the conductive material mainly composed of the low-melting-point metal, accelerating the growth of crystals in a state where a desired voltage is applied to a substrate thereby forming in lamination a thin film of the conductive material mainly composed of the low-melting-point metal with a large crystal grain size on the thin film made of the refractory metal mainly composed of W.

Thin film forming method

An objective lens driving apparatus has a base provided with focusing permanent magnets and tracking permanent magnets, a supporting shaft mounted on the base, a lens holder for holding an objective lens at an extension thereof, with the lens holder being rotatably and slidably fitted onto the supporting shaft at a position of the center of gravity of the lens holder and being provided with focusing coils and tracking coils. A plurality of substantially identical elastic members are stretched between the base and the lens holder in a plane substantially perpendicular to the supporting shaft and in axisymmetrical relation with respect to Y-axis line joining the supporting shaft and the objective lens and X-axis line substantially perpendicular to the Y-axis. Each of the elastic members is a spring formed by a lead wire extending to the focusing and tracking coils. The springs are secured to the base through a fiscous elastic material.

Objective lens driving apparatus

Growing community of inventors

Fujisawa, Japan

Hiroshi Saito