Showa Denko K.k.

Showa Denko Kabushiki Kaisha

Toyoda Gosei Co., Ltd.

Hiroshi Osawa

Hironao Shinohara

Naoki Fukunaga

Takashi Hodota

Kenzo Hanawa

Noritaka Muraki

Daizo Endo

Shun Matsumoto

The present invention provides a semiconductor light-emitting device capable of effectively emitting ultraviolet light and a method of manufacturing the same. A semiconductor light-emitting deviceincludes: a p-type semiconductor layer; a semiconductor layer that has an emission wavelength in at least an ultraviolet range; and a transparent electrodethat is formed on the p-type semiconductor layer. The transparent electrodeincludes a crystallized IZO film.

Semiconductor light-emitting device, method of manufacturing semiconductor light-emitting device, and lamp

Provided are a method of manufacturing a gallium nitride-based compound semiconductor light-emitting device with a low driving voltage (Vf) and high light outcoupling efficiency, a gallium nitride-based compound semiconductor light-emitting device, and a lamp. In the method of manufacturing the gallium nitride-based compound semiconductor light-emitting device, a transparent conductive oxide filmincluding a dopant is laminated on a p-type semiconductor layerof a gallium nitride-based compound semiconductor device. The transparent conductive oxide filmis subjected to a laser annealing process using a laser after the lamination of the transparent conductive oxide film

Method of manufacturing gallium nitride-based compound semiconductor light-emitting device, gallium nitride-based compound semiconductor light-emitting device, and lamp

The present invention provides a gallium nitride compound semiconductor light-emitting device that prevents an increase in the specific resistance of a p-type semiconductor layer due to hydrogen annealing and reduces the specific resistance of a translucent conductive oxide film to lower a driving voltage Vf, a method of manufacturing the same, and a lamp including the same. The method of manufacturing the gallium nitride compound semiconductor light-emitting device includes: forming a positive electrodecomposed of a translucent conductive oxide film on a p-type GaN layerof a gallium nitride compound semiconductor device; and a hydrogen annealing process of annealing the positive electrodein a gas atmosphere including hydrogen (H).

Gallium nitride compound semiconductor light-emitting device, method of manufacturing the same, and lamp including the same

The present invention provides a light-emitting device comprising an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer and a titanium oxide-based conductive film layer laminated in this order, wherein the titanium oxide-based conductive film layer comprises a first layer as a light extraction layer and a second layer as a current diffusion layer, the second layer being arranged on the p-type semiconductor layer side of the first layer, a method of manufacturing a light-emitting device, and a lamp.

Light-emitting device, manufacturing method thereof, and lamp

The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a method of manufacturing the same. The gallium nitride based compound semiconductor light-emitting device includes: a substrate; an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layerthat are composed of gallium nitride based compound semiconductors and formed on the substratein this order; a transparent positive electrodethat is formed on the p-type semiconductor layer; a positive electrode bonding padthat is formed on the transparent positive electrode; a negative electrode bonding padthat is formed on the n-type semiconductor layer; and an uneven surface that has random convex portions formed thereon and is provided on at least a portion of the surfaceof the transparent positive electrode

Gallium nitride based compound semiconductor light-emitting device and method for manufacturing same

There is provided a semiconductor light-emitting device having excellent light extraction efficiency and low wavelength unevenness, a manufacturing method thereof, and a lamp. A semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, and a titanium oxide-based conductive film layerlaminated in this order, wherein a random concavo-convex surfaceis formed on at least a part of the surface of the titanium oxide-based conductive film layer.

Semiconductor light-emitting device, manufacturing method thereof, and lamp

A method for producing a gallium nitride based compound semiconductor light emitting device which is excellent in terms of the light emitting properties and the light emission efficiency and a lamp is provided. In such a method for producing a gallium nitride based compound semiconductor light emitting device, which is a method for producing a GaN based semiconductor light emitting device having at least a buffer layer, an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on a translucent substrate, on which an uneven pattern composed of a convex shape and a concave shape is formed, the buffer layer is formed by a sputtering method conducted in an apparatus having a pivoted magnetron magnetic circuit and the buffer layer contains AlN, ZnO, Mg, or Hf.

GaN based semiconductor light emitting device and lamp

Disclosed is a semiconductor device which is improved in output power efficiency since reflection by the substrate is reduced. This semiconductor device is also excellent in strength characteristics of a supporting substrate. Also disclosed is a method for producing such a semiconductor device. Specifically disclosed is a nitride semiconductor device wherein at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer and a plated metal plate are sequentially stacked in this order on a substrate. This nitride semiconductor device is characterized in that the metal film layer and the plated metal plate are partially formed on the p-type semiconductor layer. Also disclosed is a nitride semiconductor device having a structure wherein at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer and a plated metal plate are sequentially stacked in this order, the device characterized in that the metal film layer and the plated metal plate are partially formed on the p-type semiconductor layer and a light-transmitting material layer is formed on the p-type semiconductor layer in a region where the metal film layer and the plated metal plate are not formed.

Nitride semiconductor light-emitting device and production method thereof

The present invention provides a production method for a nitride semiconductor light emitting device, which warps less after removing the substrate, and which can emit light from the side thereof; specifically, the present invention provides a production method for a nitride semiconductor light emitting device comprising: forming stacked layers by stacking at least an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on a substrate in this order; forming grooves which divide the stacked layers so as to correspond to nitride semiconductor light emitting devices to be produced; filling the grooves with a sacrifice layer; and forming a plate layer on the p-type semiconductor layer and the sacrifice layer by plating.

Production method for nitride semiconductor light emitting device

The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a low driving voltage Vf. The gallium nitride based compound semiconductor light-emitting device includes a p-type semiconductor layer, and a transparent conductive oxide film that includes dopants and is formed on the p-type semiconductor layer. A dopant concentration at an interface between the p-type semiconductor layer and the transparent conductive oxide film is higher than the bulk dopant concentration of the transparent conductive oxide film. Therefore, the contact resistance between the p-type semiconductor layer and the transparent conductive oxide film is reduced.

Gallium nitride based compound semiconductor light-emitting device having high emission efficiency and method of manufacturing the same

The invention provides a gallium nitride based compound semiconductor light emitting device with excellent light extracting efficiency and its production method. A light emitting device, obtained from a gallium nitride based compound semiconductor, includes a substrate; a n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer, sequentially stacked on a substrate; a light-permeable positive electrodestacked on the p-type semiconductor layer; a positive electrode bonding padprovided on the light-permeable positive electrode; and a negative electrode bonding pad providedon the n-type semiconductor layer, wherein a disordered uneven surface formed at least on a part of the surfaceof the p-type semiconductor layer

Gallium nitride-based compound semiconductor light-emitting device and production method thereof

A GaN-based semiconductor light-emitting deviceincludes a stacked bodyA having the component layersthat include an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer each formed of a GaN-based semiconductor, sequentially stacked and provided as an uppermost layer with a first bonding layermade of metal and a second bonding layerformed on an electroconductive substrate, adapted to have bonded to the first bonding layerthe surface thereof lying opposite the side on which the electroconductive substrateis formed, made of a metal of the same crystal structure as the first bonding layer, and allowed to exhibit an identical crystal orientation in the perpendicular direction of the bonding surface and the in-plane direction of the bonding surface.

GaN-based semiconductor light-emitting device and method for the fabrication thereof

The present invention provides a nitride semiconductor light emitting device, which comprises positive and negative electrodes with high adhesion, can output high power, and does not generate heat; specifically, the present invention provides a nitride semiconductor light emitting device comprising at least an ohmic contact layer, a p-type nitride semiconductor layer, a nitride semiconductor light emitting layer, and an n-type nitride semiconductor layer, which are laminated on a plate layer, wherein a plate adhesion layer is formed between the ohmic contact layer and the plate layer, and the plate adhesion layer is made of an alloy comprising 50% by mass or greater of a same component as a main component of an alloy contained in the plate layer.

Nitride semiconductor light emitting device and production method thereof

A magnetic recording medium includes an orientation adjusting layer, a nonmagnetic under layer, a nonmagnetic intermediate layer, a magnetic layer and a protective layer sequentially stacked on a nonmagnetic substrate provided on a first surface thereof with a texture streak and used for a magnetic disc. The nonmagnetic under layer contains at least a layer formed of a Cr&#x2014;Mn-based alloy and possesses magnetic anisotropy having an axis of easy magnetization in a circumferential direction thereof. A magnetic recording and reproducing device includes the magnetic recording medium and a magnetic head for enabling information to be recorded in and reproduced from the magnetic recording medium.

Magnetic recording medium and magnetic recording and reproducing device

A magnetic recording medium comprising a glass substrate having grooves on the surface thereof, an orientation-determining layer, a non-magnetic undercoat layer, a magnetic layer, and a protective film, the layers and film being successively formed on the substrate. The orientation-determining layer contains at least one element selected from the group consisting of Co, Ni, and Fe and at least one element selected from the group consisting of W, Mo, Ta, and Nb.

Growing community of inventors

Chiba, Japan

Hiroshi Osawa