Toyota Jidosha Kabushiki Kaisha

Kabushiki Kaisha Toyota Chuo Kenkyusho

Hiroshi Osada

Tadafumi Yoshida

Yutaka Yokoi

Yasushi Yamada

Masanori Usui

Norifumi Furuta

Yuji Yagi

Gentaro Yamanaka

Takahide Sugiyama

Makoto Imai

Satoshi Hirose

Hiromichi Kuno

Hiroshi Hohjo

Norimune Orimoto

Kiyofumi Nakajima

Akio Kitami

Yuka Yamada

Atsushi Kawamoto

Naoto Kikuchi

Yukio Miyachi

Tomoyuki Shoji

Hidehiko Kimura

Tadayoshi Matsumori

Takashi Ueno

Tsuguo Kondoh

A thermal conductive stress relaxation structure is interposed between a high-temperature substance and a low-temperature substance to conduct heat in a heat-transfer direction from the high-temperature substance to the low-temperature substance. The structure includes an assembly configured such that a thermal conductive material gathers in a non-bonded state having stress relaxation effect. Such an assembly is a rolled-up body configured such that a carbon-based sheet material and a metal-based sheet material are alternately rolled up, for example. This structure has one or more interfaces at which adjacent parts can slide, thereby dividing a deformable region to relax the thermal stress. It has a low rigidity and can thus deform to release the thermal stress. The structure can suppress the thermal stresses and the shape changes that would be generated in the high-temperature substance and the low-temperature substance, and each physical body located there between.

Thermal conductive stress relaxation structure

A cooling type switching element module includes an outer conductor pipe, an inner conductor pipe that transmits electric power in conjunction with the outer conductor pipe, and first and second switching elements. The first switching elements are provided on outer surfaces of the outer conductor pipe, and the second switching elements are provided on outer surfaces of a projecting portion of the inner conductor pipe. A coolant flows within the inner conductor pipe, and outside the outer conductor pipe. The first and second switching elements are cooled from both sides by the coolant flowing within the inner conductor pipe, and by the coolant flowing outside the outer conductor pipe. By employing the above-described structure, it is possible to provide a switching element module having a cooling function, in which improved cooling performance, improved electrical performance, and downsizing are achieved.

Cooling-type switching element module

A semiconductor element cooling structure includes a semiconductor element, a heat sink on which the semiconductor element is mounted, and a heat storage member attached to the semiconductor element in a manner to be located opposite to the heat sink with respect to the semiconductor element and having a case and a latent heat storage material.

Semiconductor element cooling structure

A Peltier element is provided so that an electrically conductive plate forming a heat absorbing portion is in close proximity to an insulating layer and an electrically conductive plate forming a heat radiating portion is provided in close proximity to an insulating layer. The Peltier element has one end connected to a branch line branched from a power line, and has the other end electrically connected to an electrode plate. Further, the Peltier element receives from the branch line a portion of electric power supplied to a power transistor, and outputs it to the electrode plate. In other words, the Peltier element uses the portion of the electric power supplied to the power transistor, to absorb heat generated by the power transistor and radiate it toward a heat radiating plate.

Semiconductor device including power semiconductor element, branch line, and thermoelectric conversion element, and electrically powered vehicle

A power module includes a semiconductor device having a first and second arms, and gate driving circuit board. The first arm includes a first extending electrode, a first gate electrode of a first power device extending in a direction different from the first extending electrode, and a first output electrode extending in the different direction from the first gate electrode. The second arm stacked on the first arm includes a second extending electrode extending in the first extending electrode extending direction in an insulating state, a second gate electrode of a second power device, extending in the first gate electrode extending direction, and a second output electrode extending in the first output electrode extending direction with electrical connection thereto. The gate driving circuit board is disposed at the first and second gate electrodes extending side so as to face the semiconductor device.

Power module

A semiconductor apparatusincludes a radiatoron which plural semiconductor modulesthat include semiconductor elementsare mounted, the semiconductor apparatuscharacterized by the radiatorincluding a first main surfaceB and a second main surfaceC configured to be located on the opposite side of the first main surfaceB. Semiconductor module mount-surfacesBBCCare arranged in the first main surfaceB and the second main surfaceC in a zigzag pattern in cross-sectional view; and the semiconductor modulesare mounted onto some or all of the semiconductor module mount-surfacesBBCC

Semiconductor device with a zigzag radiator

A junction body has a first member and a second member each of which is provided with a joining surface whose main component is copper. A solder member containing, in a tin-base solder material, a three-dimensional web structure whose main component is copper is provided between the first member and the second member. A copper-tin alloy whose average thickness is 2 &#x3bc;m or more but 20 &#x3bc;m or less is provided between the joining surfaces and the three-dimensional web structure.

Junction body, semiconductor module, and manufacturing method for junction body

There is provided an electronic component which comprises an insulating member on which an electronic element is mounted, and a thermal diffusion member on which the insulating member is mounted, wherein a thermal expansion coefficient of the insulating member is lower than a thermal expansion coefficient of the thermal diffusion member, and the insulating member is mounted in an embedded manner in a recess formed on a surface of the thermal diffusion member.

Electronic component

A heat sink includes a plurality of fins. The fins are formed to serve as partition walls of flow paths of a coolant. The fins are formed such that the coolant flows along a surface thereof. A merge space is formed to allow the coolant in the flow paths separated by the fins to merge. The merge space is formed in the flow paths formed by the fins.

Heat sink and cooler

A power module includes a pair of power devices that are stacked with a plate-shaped output electrode arranged therebetween, and an N-electrode and a P-electrode that are stacked with the pair of power devices arranged therebetween. The output electrode is anisotropic such that the thermal conductivity in a direction orthogonal to the stacking direction is greater than the thermal conductivity in the stacking direction. Also, the output electrode extends in the orthogonal direction from a stacked area where the pair of power devices are stacked. The N-electrode and the P-electrode extend in the orthogonal direction while maintaining an opposing positional relationship.

A cooling device including a heat absorbing unit, provided with an inflow port of a coolant medium and a discharge port for discharging the coolant medium, sealing the coolant medium in parts other than the inflow port and the discharge port, wherein the heat absorbing unit includes an upper member having an installation surface where semiconductor elements serving as an object to be cooled are installed and a cooling surface serving as a back surface of installation surface, and a lower member forming a chamber having cooling surface as a part of a inner wall surface together with upper member. Injection ports communicating with inflow port for injecting the coolant medium toward cooling surface are provided and the discharge port is provided at a position lower than opening positions of injection ports in lower member.

Injection cooling heat exchanger for vehicle electrical components

A semiconductor element cooling structure includes a plurality of semiconductor elements, and electrode structure, which has cooling medium channels therein and is electrically connected to the plurality of semiconductor elements. The electrode structure includes an alternating current electrode having the semiconductor elements on each of opposite surfaces, and a plurality of direct current electrodes holding therebetween the alternating current electrode and the semiconductor elements respectively mounted on the opposite surfaces of the alternating current electrode. Each of the alternating current electrode and the direct current electrodes has the cooling medium channels therein.

A semiconductor element cooling structure includes first and second semiconductor elements; a heat sink having a mounting surface on which the semiconductor elements are mounted and a cooling medium channel formed inside, through which a cooling medium for cooling the semiconductor elements flows; and a protruded portion provided at a position opposite to the mounting surface of the heat sink, extending in a direction intersecting flow direction of the cooling medium (direction of arrow DR) and protruding from a bottom surface of the cooling medium channel to the inside of cooling medium channel. The semiconductor elements are arranged side by side in the direction of arrow DR, such that the first semiconductor element is positioned upstream side than the second semiconductor element. A protruded portion for the second semiconductor element is provided to be positioned on the downstream side of first semiconductor element and upstream side than the center of second semiconductor element in the direction of arrow DR

Growing community of inventors

Komaki, Japan

Hiroshi Osada