Nec Tokin Corporation

Kabushiki Kaisha Toshiba

Ricoh Company, Ltd.

Toshiba Electronic Devices & Storage Corporation

Nhk Spring Co., Ltd.

Tokin Corporation

Hiroshi Ono

Shigeyoshi Yoshida

Masahiko Kuraguchi

Yosuke Kajiwara

Yoshio Awakura

Daimotsu Kato

Shinya Watanabe

Akira Mukai

Koichi Kondo

Aya Shindome

Masahiro Yamaguchi

Satoshi Shiratori

Tatsuo Shimizu

Masanori Abe

Koji Kamei

Tatsuya Chiba

Yoichi Ikeji

Okikuni Takahata

Satoshi Arai

Yutaka Shimada

Michio Nemoto

Po-Chin Huang

Shinya Nunoue

Toshiki Hikosaka

Takeshi Shintani

Nobuyuki Satoh

Satoshi Hatori

Mitsuru Takahashi

Kunihiro Ohyama

Kaoru Yoshino

Jumpei Tajima

Makoto Arai

Masato Yanagida

Akira Fujimori

Nobuo Kikuchi

Toshiya Yonehara

Katsuya Kawagoe

Toshitaka Yamaguchi

Teruhiko Fujiwara

Toshiaki Motohashi

Hideki Fuchino

Satoru Uchida

Toshio Shimazaki

Masahiko Takahashi

Yutaka Takeuchi

Jun Soga

Hideaki Sugata

Takundo Isobe

Tsuyoshi Amemiya

Masaki Tokuhashi

Tadashi Kubodera

Toshiaki Masumoto

Kazuki Yano

Hideo Yuu

Haruyuki Yamamoto

Tetsuo Itoh

Eiji Yamanaka

Yukihiro Numata

Shin-Ichi Namekata

Hiroaki Kamijo

Kazuyuki Futami

Ken-ichirou Asada

According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor regions, first and second insulating members. The third electrode includes a first electrode portion. The first electrode portion is between the first electrode and the second electrode. The first semiconductor region includes first to fifth partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The second semiconductor region includes first and second semiconductor portions. The first insulating member includes a first insulating portion. The first insulating portion is between the third and first electrode portions. The second insulating member includes first and second insulating regions. The first insulating region is between the first electrode and the first electrode portion. The second insulating region is between the first insulating region and the first electrode portion.

Semiconductor device and method for manufacturing the same

According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor regions, and a first insulating film. The first semiconductor region includes a first partial region, a second partial region, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The second semiconductor region includes a sixth partial region and a seventh partial region. The third electrode overlaps the sixth and seventh partial regions. The first insulating film includes a portion provided between the third electrode and the third partial region, between the third electrode and the fourth partial region, between the third electrode and the fifth partial region, between the third electrode and the sixth partial region, and between the third electrode and the seventh partial region.

According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, a first conductive member, first and second insulating members, and a first nitride member. A position of the third electrode in a first direction from the first to second electrodes is between positions of the first and second electrodes in the first direction. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first to fifth partial regions. The second semiconductor region includes first and second semiconductor portions. The second semiconductor portion includes first and second portions, and a third portion between the first and second portions. The first conductive member includes first and second conductive regions. The first insulating member includes a first insulating region. The second insulating member includes first and second insulating portions. The first nitride member includes a first nitride region.

Semiconductor device

A semiconductor device includes first to third electrodes, a semiconductor member, first and second insulating members, a compound member, and a nitride member. The third electrode is between the first and second electrodes. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first to fifth partial regions. The second semiconductor region includes first and second semiconductor portions. The first insulating member includes first and second insulating portions. The first semiconductor portion is between the fourth partial region and the first insulating portion. The second semiconductor portion is between the fifth partial region and the second insulating portion. The compound member includes first to third compound portions. The nitride member includes first to third nitride portions. The second insulating member includes first and second insulating regions. The first and second insulating regions are between the nitride regions and the third electrode.

Semiconductor device including compound and nitride members

According to one embodiment, a semiconductor device includes a semiconductor member, a first conductive member, a first electrode, a first insulating member, and a second insulating member. The semiconductor member includes a first partial region, a second partial region, and a third partial region. The first partial region is between the second partial region the third partial region. The first conductive member includes a first conductive portion. The first conductive portion is between the second partial region and the third partial region. The first electrode is electrically connected to the first conductive member. The first electrode includes a first electrode portion, a second electrode portion, and a third electrode portion. The first insulating member includes a first insulating region, a second insulating region, and a third insulating region. The second insulating member includes a first insulating portion and a second insulating portion.

Semiconductor device that includes a conductive member and an electrode and method for manufacturing the same

According to one embodiment, a semiconductor device includes first and second regions, a first insulating portion, and first, second, and third electrodes. The first region includes first and second partial regions, and a third partial region between the first and second partial regions. The second region includes fourth and fifth partial regions. The fourth partial region overlaps the first partial region. The fifth partial region overlaps the second partial region. The first insulating portion includes first, second, and third insulating regions. The first insulating region is provided between the second insulating region and the third partial region and between the third insulating region and the third partial region. The first electrode is electrically connected to the fourth partial region. The second electrode is away from the first electrode and is electrically connected to the fifth partial region. The third electrode is provided between the first and second electrodes.

According to one embodiment, a semiconductor device includes first to third electrodes, first to third nitride regions, and first and second insulating films. The first nitride region includes AlGaN, and includes first and second partial regions, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The first nitride region includes first to fifth partial regions. The second nitride region includes AlGaN, and sixth and seventh partial regions. At least a portion of the third electrode is between the sixth and seventh partial regions. The first insulating film includes silicon and oxygen and includes first and second insulating regions. The third nitride region includes AlGaN, and first to seventh portions. The second insulating film includes silicon and oxygen and includes third to seventh insulating regions.

Semiconductor device including different nitride regions improving characteristics of the semiconductor device

According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor layer, a second semiconductor layer, and a first insulating layer. A position of the third electrode in a first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The first semiconductor layer includes AlGaN and includes a first partial region, a second partial region, and a third partial region. The second semiconductor layer includes AlGaN. A portion of the second semiconductor layer is between the third partial region and the third electrode in the second direction. The first insulating layer includes a first insulating region. The first insulating region is between the third electrode and the portion of the second semiconductor layer in the second direction.

A fabrication method for fabricating a magnetic film provided body includes preparing a base body and forming a magnetic film on the base body. The magnetic film includes organic film(s) and ferrite film(s) alternately layered. The formation of the magnetic film alternately includes forming a ferrite film through a ferrite plating method, the ferrite film having a thickness of 20 &#x3bc;m or less and forming an organic film having a thickness of 0.1 &#x3bc;m to 20 &#x3bc;m, both inclusive, and a ratio t/E of 0.025 &#x3bc;m/GPa or more, where 't' indicates the thickness of the organic film while 'E' indicates Young's modulus of the organic film.

Body with magnetic film attached and manufacturing method thereof

Provide a nuclear reactor power monitoring technology for enhancing the monitoring accuracy and reliability in nuclear thermal hydraulic stability. A power monitorincludes a first calculation unitconfigured to calculate a first stability index based on time series data indicating power oscillation in nuclear instrumentation signals outputted from a plurality of nuclear instrumentation detectors; a first determination unitconfigured to compare the first stability index and a first reference value and determine whether nuclear thermal hydraulic stability of the reactor core is stable or deteriorated; a second calculation unitconfigured to calculate a second stability index of the reactor core based on the time series data when the deteriorated state is determined in the first determination unit; and a second determination unitconfigured to compare the second stability index and a second reference value and determine whether to perform suppressing operation of the power oscillation.

Nuclear reactor power monitor

A terminal extending from a wiring member to face an electrode of a piezoelectric element and including a proximal end part and a distal end part with respect to the wiring member, the distal end part being connected to the electrode of the piezoelectric element through a conductive adhesive, comprising an insulating layer that faces the electrode of the piezoelectric element; a wiring layer laid on the insulating layer and connected to the electrode at the distal end part; and at least one liquid stopping recess provided on a surface facing the electrode at the proximal end part, the liquid stopping recess spanning between both edges of the insulating layer in an direction intersecting an extending direction of the proximal end part.

Terminal capable of stopping flow of oozed conductive adhesive, flexure having the terminal, and head suspension having the flexure

Actuator elements are accommodated in openings formed in a conductive plate. These actuator elements are secured to the conductive plate by a resin bonding material. An electrode of each actuator element and the conductive plate are electrically connected to each other by a bridge junction consisting of an conductive paste. A paste application device discharges the conductive paste toward the bridge junction by air. A control unit configured to control the discharge of the conductive paste sets the air pressure according to the elapsed time of use of the conductive paste so that the height of the paste above the resin bonding material is not less than a target height. The target height is maintained by increasing the air pressure with increase of the elapsed time of use of the conductive paste.

Actuator mounting section of disk drive suspension, method of applying electrically conductive paste, and paste application device

A fitting structure for fitting a piezoelectric element to an actuator base that includes an opening that formed in the actuator base and accommodates the piezoelectric element, a receiver that inwardly protrudes from an inner circumferential edge of the opening and receives the piezoelectric element, a hole defined by an inner end of the receiver and communicates with the opening, a protrusion that protrudes from the inner end of the receiver onto the hole and faces the piezoelectric element through the hole, an adhesive part filled in a space defined by the piezoelectric element, the inner circumferential edge, and the receiver and is solidified in the space to adhere the piezoelectric element to the inner circumferential edge and the receiver, and a stopper formed on one of the receiver and protrusion and stops a capillary phenomenon of the adhesive between the piezoelectric element and the receiver and protrusion.

Piezoelectric element fitting structure and head suspension

A multilayer printed circuit board includes an inner magnetic layer essentially consisting of magnetic material. The inner magnetic layer may be formed by an action of chemical bond or van der Waals force. The inner magnetic layer may comprise a plurality of magnetic units, each of which provides magnetism, and may be formed by magnetically coupling the magnetic units with each other by using a strong interaction. The inner magnetic layer may essentially consist of a ferrite film. The ferrite film may be formed directly on the inner conductive layer by means of an electroless plating method. The ferrite film may essentially consist of an oxide metal composition, the metal composition being represented by the formula of FeNiZnCo, where: a+b+c+d=3.0; 2.1&#x2266;a&#x2266;2.7; 0.1&#x2266;b&#x2266;0.3; 0.1&#x2266;c&#x2266;0.7; and 0&#x2266;d&#x2266;0.15.

Multilayer printed circuit board

An inductance device comprises a magnetic core, a coil a conductor and a dielectric member. The coil is made of turns of insulated conductive wire. The conductor is distinct from the coil and is insulated from the magnetic core. The dielectric member is disposed between the conductor and the coil. The dielectric member, the conductor and the coil constitute a capacitor. The inductance device is used in, for example, a filter device or a noise filter.

Inductance device, filter device comprising the same, and noise filter comprising the same

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Yokohama, Japan

Hiroshi Ono