Kabushiki Kaisha Toshiba

Ricoh Company, Ltd.

Nec Corporation

Hitachi Chemical Company, Ltd.

Seiko Epson Corporation

Toshiba Electronic Devices & Storage Corporation

Nippon Paper Industries Co., Ltd.

Other

Fuji Xerox Co., Ltd.

Tdk Corporation

Renesas Electronics Corporation

Resonac Corporation

Pioneer Electronic Corporation

Chartered Semiconductor Manufacturing Ltd (Corporation)

Samsung Electronics Co., Ltd.

Hiroshi Ono

Shinya Nunoue

Ken Amemiya

Yuji Arai

Toshio Koike

Masahiko Kuraguchi

Kaoru Yoshino

Jumpei Tajima

Daimotsu Kato

Yosuke Kajiwara

Hiroyuki Nagashima

Toshiki Hikosaka

Akira Mukai

Takeshi Shintani

Masahiko Shakuto

Michiya Okamoto

Satoshi Hatori

Tatsuo Shimizu

Masanori Kawasumi

Nobuo Kuwabara

Aya Shindome

Masami Tomita

Naoharu Sugiyama

Haruji Mizuishi

Toshiya Yonehara

Takeshi Yamamoto

Akio Kosuge

Toshiyuki Oka

Takatsugu Fujishiro

Hitoshi Hayama

Ippei Fujimoto

Masahiro Samei

Kazuhito Kishi

Yasunori Ishigaya

Hiroshi Seo

Ryota Yamashina

Yoshiki Hozumi

Shuji Tanaka

Takaya Muraishi

Kotaro Zaima

Takumi Waida

Takashi Kawakubo

Shigeya Kimura

Tetsuo Tokuda

Michihiko Nishigaki

Toshihiko Nagano

Toshihide Ito

Makoto Yoshino

Seiji Tanaka

Katsuyuki Masuda

Takuma Iwasaki

Takeshi Uchitani

Satoshi Takano

Tamaki Wada

Hajime Nago

Yoshiyuki Kimura

Takeo Suda

Takaaki Tawada

Shinichi Kawahara

Atsushi Sampe

Yasushi Kurata

Akira Fujimori

Tomonari Shioda

Hisashi Saito

Hiroshi Mizusawa

Takashi Sato

Yasuo Mori

Hideki Kimura

Yutaka Takahashi

Arinobu Yoshiura

Shinichi Sato

Takashi Fujita

Toshiya Satoh

Masayuki Yamane

Akihiro Nakamura

Hisashi Yoshida

Koichi Tachibana

Hitoshi Ishibashi

Yoshio Hattori

Takashi Endo

Akira Ishii

Mitsuru Takahashi

Yoshiyuki Harada

Keisuke Inoue

Masayuki Watanabe

Hiromi Ogiyama

Hung Hung

Mitsuaki Teradaira

Shinji Yamada

Shin Kayahara

Eisuke Hori

Yuuji Sawai

Masato Yanagida

Jongil Hwang

Kohichi Utsunomiya

Ryuta Takeichi

Masahiro Fujii

Toshiyuki Takano

Seiichi Nakagawa

Taisuke Sato

According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, a first member, and a first insulating member. The first semiconductor layer includes AlGaN (0≤x<1). The first semiconductor layer includes first, second, third, fourth, fifth, and sixth partial regions. The second semiconductor layer includes AlGaN (0<x—1, x<x). The second semiconductor layer includes first and second semiconductor portions. The first insulating member includes a first insulating region and includes a first material. The first insulating region contacts the third partial region and a part of the third electrode. The first member includes a first portion and includes a second material different from the first material. The first portion is between the fourth partial region and an other part of the third electrode.

Semiconductor device

A polishing liquid for CMP, containing: abrasive grains containing silica; and a liquid medium, in which a content of the abrasive grains is 1.0% by mass or more based on the total amount of the polishing liquid, and in a particle size distribution on mass basis obtained by a centrifugation method, D50 of the abrasive grains is 150 nm or less, D90 of the abrasive grains is 100 nm or more, and a difference between the D90 and the D50 is 21 nm or more.

Polishing solution, dispersion, polishing solution production method, and polishing method

In the multi-layer inductor, all of the plurality of through conductors are not aligned in a straight line, and the distance between the through conductors can be sufficiently kept in the element body having a predetermined dimensional standard. Therefore, the through conductor as a heat source is apart from each other, and the heat of the through conductor can be efficiently radiated to the outside of the element body.

Multi-layer inductor

In the multi-layer inductor, the internal electrode includes the auxiliary conductor, and the auxiliary conductor is jointed to the external electrode at the end face. Therefore, when a defect occurs in a part of the through conductors, a current flows through the remaining through conductor(s) and a current also flows through the auxiliary conductor. Therefore, overheating at the joint surface between the remaining through conductor(s) and the external electrode can be prevented, and cutting and/or fusion starting from the joint surface can be prevented.

A method for correcting a synthesized speech set for hearing aid according to an aspect of the present invention includes the steps of outputting first synthesized speech for testing on the basis of first synthesized speech data for testing correlated with a first phoneme label in a synthesized speech set for testing, accepting a first answer selected by a user, outputting second synthesized speech for testing on the basis of second synthesized speech data for testing correlated with a second phoneme label in the synthesized speech set for testing, accepting a second answer selected by the user, and correlating first synthesized speech data for hearing aid with the second phoneme label instead of second synthesized speech data for hearing aid in a synthesized speech set for hearing aid, in a case in which the first answer matches the second phoneme label and also the second answer does not match the second phoneme label.

Correction method of synthesized speech set for hearing aid

A photosensitive element comprising a support film, a barrier layer, and a photosensitive layer in this order, wherein the barrier layer contains a water-soluble resin and an ultraviolet absorber.

Photosensitive element, resin composition for forming barrier layer, method for forming resist pattern, and method for manufacturing printed wiring board

According to one embodiment, a semiconductor device includes first to third electrodes, first to third nitride regions, and first and second insulating films. The first nitride region includes AlGaN, and includes first and second partial regions, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The first nitride region includes first to fifth partial regions. The second nitride region includes AlGaN, and sixth and seventh partial regions. At least a portion of the third electrode is between the sixth and seventh partial regions. The first insulating film includes silicon and oxygen and includes first and second insulating regions. The third nitride region includes AlGaN, and first to seventh portions. The second insulating film includes silicon and oxygen and includes third to seventh insulating regions.

Semiconductor device including different nitride regions and method for manufacturing same

According to one embodiment, a semiconductor device includes a first electrode, a first region, and a first insulating layer. The first electrode includes a first electrode portion. The first region contains Ga and N. The first region includes a first subregion, a second subregion, and a third subregion. The first subregion and the third subregion contain at least one first element selected from the group consisting of Ar, B, P, N, and Fe. The first subregion is located between the first electrode portion and the second subregion in a first direction. The second subregion does not contain the first element, or concentration of the first element in the second subregion is lower than concentration of the first element in the first subregion and lower than concentration of the first element in the third subregion. The first insulating layer is provided between the first electrode and the first region.

According to one embodiment, a semiconductor device includes first, second, third electrodes, a semiconductor member, and a first compound member. The third electrode is between the first and second electrodes in a first direction from the first to second electrodes. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first, second, third, fourth, and fifth partial regions. A second direction from the first partial region to the first electrode crosses the first direction. The fourth partial region is between the first and third partial regions in the first direction. The fifth partial region is between the third and second partial regions in the first direction. The second semiconductor region includes first and second semiconductor portions. The first compound member includes first, second and third compound regions.

Semiconductor device and method of manufacturing the same

According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor layer, a second semiconductor layer, and a first insulating layer. A position of the third electrode in a first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The first semiconductor layer includes AlGaN and includes a first partial region, a second partial region, and a third partial region. The second semiconductor layer includes AlGaN. A portion of the second semiconductor layer is between the third partial region and the third electrode in the second direction. The first insulating layer includes a first insulating region. The first insulating region is between the third electrode and the portion of the second semiconductor layer in the second direction.

Semiconductor device and method for manufacturing the same

According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, and a first compound member. A position of the third electrode is between a position of the second electrode and a position of the first electrode. The first semiconductor layer includes first, second, third, fourth, and fifth partial regions. The fourth partial region is between the third and first partial regions. The fifth partial region is between the second and third partial regions. The second semiconductor layer includes first, second, and third semiconductor regions. The third semiconductor region is between the first partial region and the first electrode. The first compound member includes first compound portions between the third semiconductor region and the first electrode. A portion of the first electrode is between one of the first compound portions and an other one of the first compound portions.

According to one embodiment, a semiconductor device includes first to fourth semiconductor regions, and an insulating part. The third electrode is between the first and second electrodes in a first direction from the first electrode toward the second electrode. The first semiconductor region includes AlGaN and includes first to fifth partial regions. A second direction from the first partial region toward the first electrode crosses the first direction. The second semiconductor region includes AlGaN and includes sixth and seventh partial regions. The third semiconductor region includes AlGaN and includes an eighth partial region between the fifth and seventh partial regions. The fourth semiconductor region includes AlGaN and includes a first portion between the fifth and eighth partial regions. The fourth semiconductor region includes a first element not included the first to third semiconductor regions. The insulating part includes first to third insulating regions.

According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, a first conductive part, first and second insulating layers. The third electrode includes first and second portions. The first portion is between the first electrode and the second electrode. The first semiconductor layer includes first, second, third, fourth and fifth partial regions. The third partial region is between the first and second partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The second semiconductor layer includes first and second semiconductor regions. The first conductive part is electrically connected to the first electrode. The first insulating layer includes a first insulating portion. The second insulating layer includes first and second insulating regions.

Semiconductor device with suppressed self-turn-on

A polishing liquid for polishing a surface to be polished containing a tungsten material, the polishing liquid comprising abrasive grains; a polymer having a cationic group at the terminal; an oxidizing agent; a metal oxide-dissolving agent; and water, in which the polymer has a structural unit derived from an unsaturated carboxylic acid, a weight average molecular weight of the polymer is 20000 or less, and a pH is less than 5.0.

Polishing liquid and polishing method

Growing community of inventors

Tokyo, Japan

Hiroshi Ono