Canon Kabushiki Kaisha

Merck Patent Gmbh

Hiroshi Okura

Tohru Den

Masayoshi Suzuki

Kazuhiko Fukutani

Akira Kuriyama

Hirokatsu Miyata

Miki Ogawa

Albrecht Otto

Kaoru Konakahara

Toru Den

Nobuhiro Yasui

Katsuyuki Matsui

Ryoko Horie

Yuki Hirayama

Noriyuki Matsuda

Stephan Dertinger

Takeo Wakimoto

Koutoku Ohmi

Yoshinobu Miyamoto

Tadashi Ishigaki

Eiji Nishihara

Yoshio Kobayashi

The invention relates to co-activated magnesium alumosilicate based phosphors, to a process of its preparation, the use of these phosphors in electronic and electro optical devices, such as light emitting diodes (LEDs) and solar cells and especially to illumination units comprising said magnesium alumosilicate-based phosphors.

Magnesium alumosilicate-based phosphor

The invention relates to co-activated silicate based phosphors. The invention further relates to the method of preparing these phosphors and to the use of these phosphors in electronic and electrooptical devices, in particular in light emitting diodes (LEDs) and solar cells. The invention further relates to illumination units comprising said phosphors.

Silicate-based phosphor

A microcolumnar structured material having a desired material. The columnar structured material includes columnar members obtained by introducing a filler into columnar holes formed in a porous material. The porous material has the columnar holes formed by removing columnar substances from a structured material in which the columnar substances containing a first component are dispersed in a matrix member containing a second component capable of forming a eutectic with the first component. The matrix member may be removed. In the columnar structured material, the filler is a conductive material, and an electrode can be structured by electrically connecting the conductive materials in at least a part of a plurality of holes to a conductor.

Method for producing columnar structured material

A method of manufacturing a dot pattern includes the steps of preparing a structured material composed of a plurality of columnar members containing a first component and a region containing a second component different from the first component surrounding the columnar members, with the structured material being formed by depositing the first component and the second component on a substrate, and removing the columnar members from the structured material to form a porous material having a columnar hole. In addition, a material is introduced into the columnar hole portions of the porous material to form a dot pattern, and the porous material is removed.

Columnar structured material and method of manufacturing the same

The present invention provides a new method for producing a structure having a three-dimensional network skeleton. The method includes providing a film including a first material and a second material and removing the second material contained in the film by dry etching. The first material contains a noble metal and is dispersed in the second material.

Structure having three-dimensional network skeleton, method for producing the structure, and fuel cell including the structure

A method of manufacturing a dot pattern includes the steps of preparing a structured material composed of a plurality of columnar members containing a first component and a region containing a second component different from the first component surrounding the columnar members, with the structured material being formed by depositing the first component and the second component on a substrate, and removing the columnar members from the structured material to form a porous material having a columnar hole. Additional steps include introducing a mask material into the columnar hole of the porous material to form a dot pattern, and removing the porous material.

A semiconductor device array comprising highly densely arranged nano-size semiconductor devices is prepared by a simple method. The array comprises a porous body having cylinder-shaped pores formed by removing cylinder-shaped regions from a structure that includes a matrix member formed so as to contain silicon or germanium and the cylinder-shaped regions containing aluminum and dispersed in the matrix member, semiconductor regions formed in the pores, each having at least a p-n or p-i-n junction, and a pair or electrodes, arranged respectively on the top and at the bottom of the semiconductor regions. The semiconductor regions and the pair of electrodes form a plurality of semiconductor devices on a substrate.

Method of manufacturing a semiconductor device

A photoelectric conversion device comprising at least an electron acceptive charge transfer layer, an electron donative charge transfer layer, and a light absorption layer existing between the charge transfer layers, wherein either one of the charge transfer layers comprises a semiconductor acicular crystal layer comprising an aggregate of acicular crystals or a mixture of an acicular crystal and another crystal, and a method of producing the device are disclosed. Consequently, a photoelectric conversion device being capable of smoothly carrying out transfer of electrons and having high photoelectric conversion efficiency is provided.

Photoelectric conversion device and method of production thereof

A process for producing a zinc oxide acicular structure by growing an acicular zinc oxide on a substrate, the process comprising the steps of holding the substrate in an electrolytic solution in which at least zinc ions are present, and forming zinc oxide on the substrate by electrodeposition. The electrolytic solution contains at least one cosolute. Also disclosed is a photoelectric conversion device comprising a charge transport layer having the zinc oxide acicular structure.

Zinc oxide with acicular structure, process for its production, and photoelectric conversion device

An electrodeposition display device includes a first substrate, a second substrate facing the first substrate, walls for sealing off the substrates, plating liquid sealed in between the substrates so as to form a cell, a first electrode disposed on at least a part of the first substrate, and a second electrode disposed within the cell. Display is performed by applying signals corresponding to image information to the first electrode and the second electrode, so as to change the state thereof to a state wherein electrodeposition of metal has occurred on at least part of the first electrode, and a state wherein at least a part of metal on the first electrode has become disassociated.

Electrodeposition display device

A method of producing oxide whiskers is provided which comprises heating a source material comprised of a metal or an inorganic compound at a first temperature to be vaporized and depositing a crystal constitutive material vaporized from the source material on a substrate heated at a second temperature lower than the first temperature.

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Hiratsuka, Japan

Hiroshi Okura