Samsung Display Co., Ltd.

Hiroshi Okumura

Jongjun Baek

Je-Hun Lee

Byung Soo So

Dong-Sung Lee

Jin-Hyun Park

Byungsoo So

Sung-Hoon Yang

Jaewoo Jeong

Jae Woo Jeong

Jong Oh Seo

Jong Jun Baek

Jin-Ho Hwang

Jihwan Kim

Minkyung Kang

A transistor substrate includes a substrate, a semiconductor layer overlapping the substrate, and a gate electrode overlapping the semiconductor layer. The semiconductor layer includes a channel unit, a conductive unit directly connected to an end of the channel unit, and an edge unit positioned at an edge of the conductive unit. A carbon concentration of the edge unit is higher than each of a carbon concentration of the channel unit and a carbon concentration of the conductive unit.

Thin film transistor array substrate including edge region capping conductive region

A laser irradiation apparatus includes a laser light source which emits a laser beam, a first lens through which the laser beam emitted from the laser light source passes, a first scanner which reflects the laser beam passing through the first lens and changes a direction of the laser beam, a second scanner which reflects the laser beam deflected by the first scanner and changes a direction of the laser beam, a plurality of second lenses through which the laser beam deflected by the second scanner passes, where at least one of the plurality of second lenses is configured to vibrate in one direction, and an optical element through which the laser beam passing through the plurality of second lenses passes, where the optical element is configured to correct an incident angle of the laser beam incident a substrate.

Laser irradiation apparatus and laser irradiation method

A laser irradiation method includes a first scanning wherein a laser beam is scanned in a first region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using a spot laser beam, and a second scanning wherein laser beam is scanned in a second region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using the spot laser beam. A center of the second region is spaced apart from a center of the first region in the X direction.

Laser irradiation method and laser irradiation apparatus

A method of manufacturing a display apparatus includes forming a first substrate on a support substrate; forming a first barrier layer on the first substrate; and forming a conductive layer by implanting n-type impurities or p-type impurities in the first barrier layer and at least a portion of the first substrate. A display apparatus includes a conductive layer arranged on a substrate and a barrier layer arranged on the conductive layer. The conductive layer is doped with n-type impurities when the first barrier layer is doped with n-type impurities, and the conductive layer is doped with p-type impurities when the first barrier layer is doped with p-type impurities.

Display apparatus with doped barrier and conductive layers and method of manufacturing the same

Provided are a laser annealing apparatus and a method of manufacturing a substrate having a poly-Si layer using the laser annealing apparatus. The laser annealing apparatus includes a laser beam source that emits a linearly polarized laser beam, a polygon mirror that rotates around a rotation axis and reflects the laser beam emitted from the laser beam source, a first Kerr cell disposed on a laser beam path between the laser beam source and the polygon mirror, and a first optical element that directs the laser beam reflected by the polygon mirror toward an amorphous Si layer where the laser beam is irradiated upon the amorphous Si layer.

Laser annealing apparatus and method of manufacturing substrate having poly-si layer using the same

A laser irradiation apparatus includes: a laser module configured to emit a laser beam; a first optical system configured to scan the laser beam emitted from the laser module along a first direction; an optical element configured to refract the laser beam emitted from the first optical system; and a substrate supporter on which a base substrate to which the laser beam refracted through the optical element reaches is arranged.

Apparatus for laser irradiation and method for laser irradiation

A thin film transistor includes a gate electrode on a substrate, a gate insulation layer which covers the gate electrode on the substrate, an oxide semiconductor pattern which is disposed on the gate insulation layer and includes a channel portion superimposed over the gate electrode, and low resistance patterns provided at edges of the channel portion, respectively, and including oxygen vacancies, a channel passivation layer on the oxide semiconductor pattern, a reaction layer which covers the oxide semiconductor pattern and the channel passivation layer, and includes a metal oxide, and a source electrode and a drain electrode which contact the oxide semiconductor pattern.

Thin film transistor with a reaction layer creating oxygen vacancies in an oxide semiconductor

Thin film transistors with oxide semiconductor having low resistance patterns with oxygen deficiencies

A display substrate includes a gate electrode on a base substrate, an active pattern which overlaps the gate electrode and includes a metal oxide semiconductor, an insulation pattern on the active pattern, a source electrode which contacts the active pattern, a drain electrode which contacts the active pattern and is spaced apart from the source electrode, and a first passivation layer which covers the active pattern and the insulation pattern, and includes fluorine, where the active pattern includes a first portion which directly contacts the insulation pattern and overlaps the gate electrode and the insulation pattern, a second portion which contacts the first passivation layer and has an electrical conductivity substantially larger than that of the first portion, a third portion which contacts the first passivation layer, has an electrical conductivity substantially larger than that of the first portion and is spaced apart from the second portion.

Display substrate including a thin film transistor and method of manufacturing the same

A laser crystallization device includes a first light source providing a first light and a second light source providing a second light. The device further includes a first lens set receiving the first light to generate a first transmitted light, the first transmitted light having a first profile, the first profile having a first profile error portion and a first non-error portion. The device further includes a second lens set receiving the second light to generate a second transmitted light, the second transmitted light having a second profile, the second profile having a second profile error portion and a second non-error portion, the second profile error portion corresponding to the first non-error portion, the second non-error portion corresponding to the first profile error portion. The device further includes an optical system combining the first transmitted light with the second transmitted light.

Laser crystallization apparatus and laser crystallization method using the apparatus

A laser crystallization device is provided, which includes a vibration device vibrating a laser beam along its long axis, wherein a vibration frequency at which the laser beam vibrates is satisfied by Equation 1 below.&#x3c;()/(2*)&#x2003;&#x2003;Equation 1where F is the mirror vibration frequency, W is the laser beam width, P is the laser scan pitch, and f is the laser pulse frequency.

Growing community of inventors

Hwaseong-si, South Korea

Hiroshi Okumura