Nec Corporation

Nec Lcd Technologies, Ltd.

Nlt Technologies, Ltd.

Casio Computer Co., Ltd.

Japan Aviation Electronics Industry, Limited

Hiroshi Okumura

Hiroshi Tanabe

Katsuhisa Yuda

Yoshinobu Sato

Jin Matsushima

Ken Sumiyoshi

Masayoshi Suzuki

Osamu Sukegawa

Kunihiro Shiota

Setsuo Kaneko

Kenji Honda

Akitoshi Sakaue

Kenji Sera

Mitsunori Sato

Osamu Hirata

Yutaka Takezawa

Yutaro Kogawa

Shigeki Kurahashi

Akio Tanikawa

Daisuke Hiraoka

Joji Akizuki

Tamaki Sakuramoto

Nikio Yanagawa

A touch panel includes two ground wires. One end portion (an end portion X) of one of the two ground wires and one end portion (an end portion Y) of the other of the two ground wires form a gap. When the touch panel is viewed from front, the following condition as an example is satisfied: a line segment Zintersects at least one of the two ground wires. The line segment Zis a line segment which connects any one point Pon a first line segment and any one point Qon a second line segment, the first line segment connecting a site of the end portion Xand a site of the end portion Ywhich are located on two sides of an outer gate of the gap, the second line segment connecting a site of the end portion Xand a site of the end portion Y

Touch panel having high resistance to static electricity

In a touch panel in which a sensor electrode array, frame wiring set that is located outside the sensor electrode array and connected to the sensor electrode array, and a first outer ground wiring line located outside the frame wiring set are formed on a transparent substrate of the touch panel, shielding wiring covering the frame wiring set is provided, with an insulating layer placed between the frame wiring set and the shielding wiring, and a second outer ground wiring line is provided outside the shielding wiring. The shielding wiring is connected to a ground wiring line included in the frame wiring set through a hole formed in the insulating layer and is insulated from the second outer ground wiring line.

A liquid crystal display accommodates a reflective portion with a concavo-convex reflecting pixel electrode for reflecting incident light from the display face side, and a transmissive portion with a transmissive pixel electrode for transmitting light output from the backlight. In a wide viewing angle region, luminance of the reflective portion is greater than the transmissive portion. In other angle regions, luminance of the transmissive portion is greater than the reflective portion. In a wide viewing field mode, the reflective portion and transmissive portion both perform normal display. In the narrow viewing field mode, the transmissive portion performs normal display, while the reflective portion performs cancelling data display, thereby rendering unviewable the display content of the transmissive portion from beyond a certain viewing angle. Thus, a semi-transmissive liquid crystal display device and a portable terminal device is switchable between a narrow viewing field mode and a wide viewing field mode.

Semi-transmissive liquid crystal display device and portable terminal device

To suppress malshaping in a lenticular lens sheet formed by using ultraviolet curing resin, which is caused due to an increase in the aspect ratio of cylindrical lenses and anisotropy of curing contraction. Notch sections are provided to the cylindrical lenses for sectioning the cylindrical lenses in a pseudo manner in the major axis direction (extending direction) of the cylindrical lenses so as to suppress the anisotropy of the curing contraction of the resin.

Lens sheet and display panel

A liquid crystal display element accommodates a reflective portion provided with a concavo-convex reflecting pixel electrode for reflecting incident light from the display face side and displaying information, and a transmissive portion provided with a transmissive pixel electrode for transmitting light that is output from the backlight. The voltages applied to the reflective portion and the transmissive portion are controlled independently. The reflective portion and the transmissive portion have wide viewing angle characteristics. In a wide viewing angle region greater than a certain angle, the luminance of the reflective portion is greater than the luminance of the transmissive portion, whereas in other angle regions the luminance of the transmissive portion is greater than the luminance of the reflective portion. In a wide viewing field mode, the reflective portion and transmissive portion both perform normal display, whereas in the narrow viewing field mode, the transmissive portion performs normal display, while the reflective portion performs cancelling data display, thereby rendering unviewable the display content of the transmissive portion from beyond a certain viewing angle. It is thus possible to provide a semi-transmissive liquid crystal display device and a portable terminal device switchable between a narrow viewing field mode and a wide viewing field mode.

To suppress bad shaping generated due to fusion of neighboring cylindrical lenses in a lens sheet formed by using an ultraviolet curable resin, for example. A lens sheet includes: a substrate formed with a transparent material; a plurality of protruded lines provided on the substrate in parallel at a specific pitch; and a plurality of cylindrical lenses, each of which is provided between the plurality of protruded lines on the substrate. The protruded line for forming the lens is designed to be constituted with a set of two lines, i.e., a left protruded line and a right protruded line, to suppress fusion of the neighboring lenses.

Lens sheet, display panel, and electronic apparatus

To provide a structure and a manufacturing method which can manufacture, at a low cost and with good yield, a liquid crystal display panel having a lenticular lens and a substrate formed in a unified manner. When forming a lenticular lens onto a mother CF substrate by using a wet etching method, substrates are dipped into an etching solution while being raised up in such a manner that the length direction of slit openings of a mask is aligned with a vertical direction and an area having no mask pattern comes on a bottom side. With this, the residuals generated due to glass impurities can be drained towards the lower side along the lenticular lens shape to be discharged to the flat area, which makes it possible to suppress deterioration in the etching processed shape.

Liquid crystal display panel and manufacturing method thereof

A TFT and the like capable of realizing performances such as a low threshold voltage value, high carrier mobility and a low leak current easily. A TFT consists of a polycrystalline Si film having a small heat capacity part and a large heat capacity part, and the small heat capacity part is used at least as a channel part. The polycrystalline Si film is formed of a crystal grain film through laser annealing of an energy density with which the small heat capacity part melts completely but the large heat capacity part does not melt completely. Since the channel part is formed of large crystal grains grown from the boundaries between the small heat capacity part and the large heat capacity parts, it is possible to realize performances such as a low threshold voltage value, high carrier mobility and a low leak current by using a typical laser annealing device.

Method of manufacturing a polycrystalline semiconductor thin film

Thin film transistor and thin film transistor substrate including a polycrystalline semiconductor thin film having a large heat capacity part and a small heat capacity part

A semiconductor device with a TFT includes a substrate, an island-shaped semiconductor film serving as an active layer of the TFT on or over the substrate, a pair of source/drain regions formed in the semiconductor film, and a channel region formed between the pair of source/drain regions in the semiconductor film. The pair of source/drain regions is thinner than the remainder of the semiconductor film other than the source/drain regions. The thickness difference between the pair of source/drain regions and the remainder of the semiconductor film is in a range from 10 angstrom (&#x212b;) to 100 angstrom. The total process steps are reduced and the operation characteristic and reliability of the device are improved.

Semiconductor device with thin-film transistors and method of fabricating the same

A thin film transistor substrate is provided including a first thin film transistor and a second thin film transistor. The first thin film transistor comprises a first active layer, a first gate insulating film, and a first gate electrode. The second thin film transistor comprises a second active layer formed, a second gate insulating film, and a second gate electrode. A thickness of the second gate insulating film is larger than a thickness of the first gate insulating film, the second active layer has at least two impurity doping regions which overlap the second gate electrode, the first active layer has at least two impurity doping regions formed in a self-aligning manner with respect to the first gate electrode, and the second gate electrode comprises a semiconductor layer.

Thin film transistor substrate and method for manufacturing the same

A method for changing an amorphous silicon film to a poly-crystalline silicon film includes the steps of irradiating an elongate pulse laser beam onto the silicon film while scanning in the direction normal to the major axis of the elongate pulse laser beam, to form a plurality of irradiated areas, irradiating flat-surface light onto the irradiated areas in the direction parallel to the major axis, and analyzing distribution of the reflected light from the irradiated areas to determine the threshold value of micro-crystallization. The threshold value is used to further determine an energy density of the elongate pulse laser beam for the phase change process.

Laser irradiation method and apparatus for forming a polycrystalline silicon film

An active matrix substrate includes a substrate composed of resin, and a polysilicon thin film diode formed on the substrate. The polysilicon thin film diode may be a lateral diode centrally having a region into which impurity is doped. As an alternative, the polysilicon thin film diode may be comprised of two lateral diodes electrically connected in parallel to each other and arranged in opposite directions.

Active matrix substrate and method of fabricating the same

A LCD device is provided. On the input side, the collimated-light generator generates collimated light from incident light and then, the first polarizer plate of the first polarized-light controller generates first polarized light from the collimated light. The first quarter wavelength plate of the first polarized-light controller generates second polarized light from the first polarized light. The second polarized light thus generated passes through the liquid crystal layer to reach the output side. On the output side, the second polarized light passes through the second quarter wavelength plate of the second polarized-light controller and the second quarter wavelength plate thereof. Thus, the polarization state of the second polarized light is returned to its original one.

Liquid-crystal display device and method of fabricating the same

A method of forming a semiconductor thin-film constitutes an alignment mark in a laser annealing process. A first laser beam is irradiated to a semiconductor thin-film to form a first irradiated region. A second laser beam, which is coaxial with the first laser beam, is irradiated to the thin-film in such a way as not to overlap with the first irradiated region, thereby forming a second irradiated region and a non-irradiated region. An alignment mark is formed by using an optical constant difference between the second irradiated region and the non-irradiated region. The second laser beam may be irradiated to the thin-film in such a way as to overlap with the first irradiated region, where an alignment mark is formed by using an optical constant difference between the first and second irradiated regions or between the second irradiated region and the non-irradiated region. Preferably, the thin-film is made of a-Si or poly-Si.

Growing community of inventors

Tokyo, Japan

Hiroshi Okumura