Sumitomo Electric Industries, Limited

Sumitomo Wiring Systems, Limited

Autonetworks Technologies, Limited

Panasonic Corporation

Nagoya University

Osaka Prefecture University Public Corporation

Hiroshi Okada

Satoshi Horihata

Naoki Adachi

Takuya Sunada

Takeshi Oomori

Yasuhiro Iguchi

Hiroaki Takada

Yukihiro Miyashita

Tetsuya Noda

Yoshikuni Shimomura

Yuichi Kawamura

Hiroki Takakura

A rewrite detection system, a rewrite detection device and an information processing device can detect unauthorized rewrite to a program or data stored in a storage unit of the information processing device. A rewrite detection device generates a random seed and transmits it to an ECU and a server device. The ECU calculates a hash value using a predetermined hash function on the basis of the received random seed and the storage content of the storage unit, and transmits the hash value to the rewrite detection device. The server device transmits an expectation in response to an inquiry from the rewrite detection device. The rewrite detection device determines whether unauthorized rewrite to a program or data in the ECU has been performed or not in accordance with whether the expectation received from the server device and the hash value received from the ECU coincide with each other or not.

Rewrite detection system, rewrite detection device and information processing device

An access restriction device as well as an on-board communication system and a method for communication restriction, which prevent outside leakage of information caused by unauthorized access of malicious programs to an in-car network. The communication between the in-car network of the vehicle and an external device is performed by a security controller. The security controller can perform addition or update of a program involving processing for transmission and reception of the information. The security controller performs processing for restricting access to information of the in-car network performed by program execution according to an access authorization level of each program and an access permission level of each type of information. The security controller restricts the transmission depending on the access authorization level of each program and the access permission level of each type of information in case of transmitting the information to the in-car network by the program execution.

Access restriction device, on-board communication system and method for communication restriction

An in-vehicle communication system and an in-vehicle relay apparatus that can perform relaying between multiple in-vehicle networks if a new in-vehicle device is connected to a said in-vehicle network, and that can prevent, if an improper in-vehicle device is connected to the in-vehicle network, the entire system from being adversely affected by the improper in-vehicle device. The in-vehicle relay apparatus that relays information between the multiple in-vehicle networks has stored therein relay destination determination information necessary to determine a relay destination of information. If a new in-vehicle device is connected to any one of the in-vehicle networks, an acquiring unit communicates with a communication device to obtain updated relay destination determination information, a determination unit determines if the updated relay destination determination information is legitimate, and an updating unit updates the relay destination determination information of the in-vehicle relay apparatus.

In-vehicle communication system and in-vehicle relay apparatus

GateWay (GW) having a shape of a substantially-flat rectangular parallelepiped and including terminals on one wide surface or both wide surfaces, GWs are stacked on each other so as to connect first corresponding terminals while connecting second corresponding terminals. The corresponding terminals are connected inside each GW, and are connected with each other via a component for transmitting a communication signal through a communication line and via a relay processing section for executing a relaying process for the communication signal. By stacking GWs on each other, the function of a multi-bus GW can be realized.

Communication system, relay device and wiring harness

A semiconductor device includes one or more transistor cells mounted on a first conductive type silicon carbide (SiC) substrate, wherein each of the transistor cells includes a second conductive type wall region formed on a first surface of the SiC substrate, a first conductive type source region formed in the wall region, a gate electrode formed with a gate insulating film; a source electrode formed in such a way as to be brought into contact with the source region, and a drain electrode formed on a second surface of the SiC substrate. The semiconductor device further includes a second conductive type region located close to an outside of an outermost cell of the transistor cells, the second conductive type region surrounding the wall region and being insulated from both of the gate electrode and the source electrode.

Semiconductor device having at least a transistor cell with a second conductive type region surrounding a wall region and being insulated from both gate electrode and source electrode and solid state relay using same

A semiconductor device includes one or more unipolar compound semiconductor element; and bypass semiconductor elements externally connected to the respective compound semiconductor elements in parallel. A turn-on voltage of the bypass semiconductor elements is smaller than a turn-on voltage of the compound semiconductor elements in the direction from the source to the drain.

Semiconductor device and solid state relay using same

A light-receiving element device capable of receiving near infrared to mid-infrared light of 1.7 &#x3bc;m-3.5 &#x3bc;m is provided. A substrate is formed of InP, and a superlattice light-receiving layer is formed of a superlattice of a type 2 junction formed by alternately being stacked a falling layer of a Group III-V compound semiconductor including In, Ga, As, N and a rising layer of a Group III-V compound semiconductor including Ga, As, Sb. The film thickness of the falling layer and the rising layer is each 3 nm-10 nm. The entire thickness of the superlattice light-receiving layer is 2 &#x3bc;m-7 &#x3bc;m. The lattice mismatch of the constituent film of the superlattice light-receiving layer to InP is &#xb1;0.2% or less.

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Yokkaichi, Japan

Hiroshi Okada