Fujitsu Semiconductor Limited

Fujitsu Corporation

Hiroshi Ohtsubo

Yuichi Asano

Yoshihiro Kubota

Tomoyuki Fukuda

Masanori Takahashi

Haruo Kojima

Katsunori Wako

Masamichi Fujimoto

Yuki Yasuda

Youhei Nagahama

A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.

Semiconductor device with heat spreader

In a method of manufacturing a semiconductor device of the invention, a rigid substrate which supports one or more semiconductor elements on a surface of the substrate and is clamped between an upper mold and a lower mold of an encapsulation mold at a time of resin encapsulation is provided, so that a vent-end edge portion of the substrate corresponding to a vent end of the encapsulation mold has a thickness smaller than a thickness of other portions of the substrate. The substrate is disposed in the encapsulation mold, and resin is injected into a cavity between the upper mold and the substrate to encapsulate the semiconductor elements with the resin.

Method of manufacturing a semiconductor using a rigid substrate

Method of manufacturing a semiconductor device using a rigid substrate including the vent-end edge portion of the substrate has a thickness smaller than the other portions of the substrate

Growing community of inventors

Yokohama, Japan

Hiroshi Ohtsubo