Hitachi, Ltd.

Hiroshi Ohtsu

Akira Ikegami

Toshio Ogawa

Tokio Isogai

Katsuo Abe

Hirayoshi Tanei

Noriyuki Taguchi

Tadamichi Asai

Kazuhiko Ato

Mituru Fujii

The present invention provides an electronic circuit component having a ceramic base and more particularly to a conductive paste for circuit film and an electronic circuit component having a copper film circuit of 10 .mu.m of less in film thickness formed from said conductive paste and a method for making the electronic circuit component. The characteristic of the present invention resides in a conductive paste comprising 100 parts by weight of copper powder of 1 .mu.m or less in average particle size, 0.01-4 parts by weight of at least one of S, Te and Se and 1-10 parts by weight of a frit glass as a binder. Further, there is provided an electronic circuit component having a copper film circuit containing 0.005-2 parts by weight of at least one of S, Te and Se and an effective amount of a glass as a binder for 100 parts by weight of copper which is produced by forming a circuit pattern of said conductive paste on an insulating base by flexo-printing method or the like and then firing the pattern. Especially, since a copper film of 10 .mu.m or less in thickness can be easily formed by printing method, an electronic circuit component having fine circuit pattern comparable to conventional gold film can be provided. This electronic circuit component is excellent as electronic circuit components which require low circuit loss.

Electrically conductive paste, electronic circuit component and method

A low temperature-sinterable dielectric composition is provided, whose sintered composition when prepared by firing a uniform mixture consisting of lead ferrotungstate, lead titanate and manganese dioxide at a temperature of not higher than 1,000.degree. C. has the general formula A.Pb(Fe.sub.2/3 W.sub.1/3).sub.1-x Ti.sub.x O.sub.3 +B.MnO.sub.2, wherein 0.005.ltoreq..times..ltoreq.0.65, A=0.95-0.9995, and B=0.0005-0.05, a relative dielectric constant of at least 2,000 at 25.degree. C., a dissipation factor (tan .delta.) of not more than 5% at 25.degree. C., and a specific resistance of at least 10.sup.9 .OMEGA..cm at 25.degree. C. Also provided is a thick film capacitor having a dielectric layer prepared from said composition.

Low temperature-sinterable dielectric composition and thick film

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Mito, Japan

Hiroshi Ohtsu