Kabushiki Kaisha Toshiba

Taisho Pharmaceutical Co., Ltd.

Hitachi Industrial Equipment Systems Co., Ltd.

Canon Kabushiki Kaisha

Hoya Corporation

Sumitomo Chemical Company, Limited

Toshiba Electronic Devices & Storage Corporation

National Institute of Information and Communications Technology, Incorporated

Nec Corporation

Honda Motor Co., Ltd.

Kao Corporation

Nippon Steel Corporation

Mitsui Minings & Melting Co., Ltd.

Tdk Electronics Company, Limited

Sega Enterprises, Ltd.

Hiroshi Ohta

Syotaro Ono

Wataru Saito

Yasuto Sumi

Masaru Izumisawa

Kazunari Sakagami

Akito Yasuhara

Nana Hatano

Masakatsu Takashita

Wataru Sekine

Atsuro Nakazato

Miho Watanabe

Kiyoshi Kimura

Hiroyuki Irifune

Hiroaki Yamashita

Dai Nozawa

Yuji Takahashi

Yuji Yamanaka

Tsuyoshi Shibata

Toshio Nakamura

Kimiaki Hayakawa

Shuji Yamamoto

Yoshimasu Yamaguchi

Hideaki Kosasa

Toshihiko Kusumoto

Shigeyuki Chaki

Seiji Masuda

Kozo Sakakibara

Yuko Araki

Junji Suzuki

Fumimasa Horikiri

Hideharu Tanaka

Hiroyuki Matsuda

Tomoo Suzuki

Hitoshi Nishimura

Tomoyoshi Mishima

Toshiaki Matsui

Tomoko Tamita

Munehisa Yabuzaki

Akira Iyozumi

Xiang-Min Sun

Kumi Abe

Makoto Tatsuzuki

Shuhei Kashiwa

Aya Fujino

Toshiharu Shimazaki

Hideto Sugawara

Tohru Nakamura

Masato Hayashi

Shigeyuki Yorikane

Eiichi Yajima

Jian Jiang

Hisao Ichijo

Osamu Asai

Kazumasa Kanai

Minoru Moriya

Ryo Suzuki

Masaki Takahashi

Yuji Ito

Takashi Nakajima

Hitoshi Kamura

Masatomo Shibata

Akira Kawakami

Akitoshi Oikawa

Hitoshi Azegami

Taketoshi Okubo

Kenzo Koike

Masaki Shimizu

Yoshinori Sekiguchi

Eiji Horigome

Junichi Fukasawa

Hideki Fujimoto

Masahito Abe

Takeshi Mitsuishi

Hiroki Urabe

Shinji Urata

Yoshitaka Kitahara

Takeru Matsuoka

Takehiro Matsuzaka

Shoichi Kuroda

Kazutomo Hoshino

Yohei Matsuda

Yasunobu Ushiki

Fumito Uneuchi

Takeshi Kuwada

Kanako Yamamoto

Kenichi Kawabe

Takeshi Koami

Daisuke Wakasugi

Zhijia Ren

Yoshihisa Shirasaki

Ryusuke Oshiro

Yasuhiro Kume

Aya Futamura

Yuri Amada

Ken-ichi Shinde

Hideaki Tabuse

Youichi Shimazaki

There is provided a gallium nitride laminated substrate including: an n-type gallium nitride layer containing an n-type impurity; a p-type gallium nitride layer provided on the n-type gallium nitride layer, containing a p-type impurity, forming a pn-junction at an interface with the n-type gallium nitride layer, and having a p-type impurity concentration and a thickness such that, when a reverse bias voltage is applied to the pn-junction, a breakdown occurs due to a punchthrough phenomenon before occurrence of a breakdown due to an avalanche phenomenon; and an intermediate level layer provided on the p-type gallium nitride layer, containing a p-type gallium nitride which contains the p-type impurity at a higher concentration than the p-type gallium nitride layer, having at least one or more intermediate levels between a valence band and a conduction band, and configured to suppress an overcurrent resulting from a breakdown due to the punchthrough phenomenon in the p-type gallium nitride layer.

Gallium nitride laminated substrate and semiconductor device

A semiconductor device includes a semiconductor part between first and second electrodes, first and second control electrodes between the semiconductor part and the second electrode. The semiconductor part includes a first region and a second region around the first region. The semiconductor part includes first and third layers of a first conductivity type and second layers of a second conductivity type. The second layers are provided between the first layer and the second electrode. A second layer faces the first control electrode in the second region. Another second layer faces the second control electrode in the second region. A third layer is provided between the second layer and the second electrode. Another third layer is provided between another second layer and the second electrode. The second layer includes a second conductivity type impurity with a concentration lower than that of a second conductivity type impurity in another second layer.

Semiconductor device

According to one embodiment, a semiconductor device includes first and second electrodes, first, second, third, fourth, fifth, sixth and seventh semiconductor regions, and a gate electrode. The first semiconductor region is provided on the first electrode. The second semiconductor region is provided on a portion of the first semiconductor region. The third semiconductor region is provided on another portion of the first semiconductor region. The fourth semiconductor region is provided in at least a portion between the first and third semiconductor regions. The fifth semiconductor region is provided between the first and fourth semiconductor regions. The sixth semiconductor region is provided on the third semiconductor region. The seventh semiconductor region is provided selectively on the sixth semiconductor region. The gate electrode opposes the second, sixth, and seventh semiconductor regions. The second electrode is provided on the sixth and seventh semiconductor regions.

A semiconductor device includes a semiconductor body, first and second electrodes, and a control electrode. The semiconductor body includes first to fourth semiconductor layers. The first electrode is provided on a front surface of the semiconductor body. The second electrode is provided on a back surface of the semiconductor body. The control electrode is provided between the semiconductor body and the first electrode. The second semiconductor layer is positioned between a portion and other portion of the first semiconductor layer in a first direction directed along the front surface. The third semiconductor layer contacts the portion of first semiconductor layer and the second semiconductor layer. The third semiconductor layer includes a first end portion positioned in the portion of the first semiconductor layer and a second end portion positioned in the second semiconductor layer. The fourth semiconductor layer is selectively provided in the second end portion.

Provided is an air compressor which exhibits improved reliability by resolving problems relating to drainage discharge defects, and exhibits improved energy efficiency. The air compressor comprises: a compressor body which compresses air; a compressed air flow path through which the compressed air from the compressor body flows; a heat exchanger which is provided to the compressor flow path so as to cool the compressed air from the compressor body; and a drainage pipe () which branches from the compressed air flow path so as to connect to the exterior, and through which drainage condensed from the compressed air cooled in the heat exchanger flows. A strainer () which removes foreign matter contaminating the drainage is provided to the drainage pipe (). An on-off valve () at the downstream side of the strainer (), and a pressure sensor () at the upstream side thereof, said sensor detecting pressure inside the drainage pipe (), are each provided so as to resolve drainage discharge defects.

Air compressor with drain pipe arrangement

A semiconductor device includes a semiconductor member having a mesa structure in which a first semiconductor layer and a second semiconductor layer are laminated on each other and having a pn junction; an insulating film disposed on a side surface of the mesa structure and on an outside upper surface of the mesa structure; a first electrode connected to the second semiconductor layer on the upper surface of the mesa structure, and extends on the side surface of the mesa structure and on the outside upper surface of the mesa structure on the insulating film; and a second electrode connected to the first semiconductor layer on a lower surface of the first semiconductor layer, and having a capacitance of the insulating film when a reverse bias voltage is applied between the first electrode and the second electrode, so that a first voltage applied to the insulating film between a corner position (a first position) where the side surface of the insulating film disposed on the side surface of the mesa structure and the upper surface of the insulating film disposed on the outside upper surface of the mesa structure are connected to each other, and a corner position (a second position) where the side surface of the mesa structure and the outside upper surface of the mesa structure are connected to each other, is equal to or smaller than a second voltage applied to the first semiconductor layer between a pn junction interface (a third position) in a lower part of a region where the first electrode is in contact with the second semiconductor layer, and a position directly under the third position (a fourth position) at a height of the second position.

Typical liquid-cooled compressors use the effective means of reducing no-load power by repeatedly starting and stopping an electric motor according to the amount of required air, but sufficient consideration has not been given to the fact that frequent starting and stopping of large-output electric motors leads to a decline in motor reliability. In order to solve this problem, a liquid-cooled compressor for circulating a liquid inside a compressor body using a pressure difference, and equipped with a cooling channel for circulating said liquid for cooling, configured so as to have an intake valve for adjusting the air intake of the compressor body, to change the amount of air taken in through the intake valve, and as a result, to perform a low-pressure operation during no-load operation at two levels of reduced operating pressure consisting of a value no less than a minimum circulation oil supply pressure and a low value. As a result, possible to provide a compressor which balances ensuring the reliability of the compressor and the electric motor during no-load operation of a large-output electric motor, and improving energy efficiency during no-load operation by reducing surplus power.

Liquid-cooled compressor and method for operating same

There is provided a semiconductor device, including: a semiconductor member having a mesa structure in which a second semiconductor layer having one of a p-type conductivity type and an n-type conductivity type is laminated on a first semiconductor layer having the other one of the p-type conductivity type and the n-type conductivity type, so that the second semiconductor layer is exposed on an upper surface of the mesa structure, a pn junction interface is exposed on a side surface of the mesa structure, and the first semiconductor layer is exposed on an outside upper surface of the mesa structure; an insulating film disposed on a side surface of the mesa structure and on an outside upper surface of the mesa structure; a first electrode electrically connected to the second semiconductor layer on the upper surface of the mesa structure, and extends on the side surface of the mesa structure and on the outside upper surface of the mesa structure on the insulating film; and a second electrode electrically connected to the first semiconductor layer on a lower surface of the first semiconductor layer, wherein the insulating film is constituted including a first insulating layer and a second insulating layer, the first insulating layer is disposed so as to cover a corner portion where the side surface of the mesa structure and the outside upper surface of the mesa structure are connected to each other, the second insulating layer is disposed so as to cover the pn junction interface exposed on the side surface of the mesa structure, or is disposed to constitute an entire thickness of the insulating film directly under the electrode end of the first electrode so as to cover the area directly under the electrode end, the relative dielectric constant of the second insulating layer is equal to or larger than the relative dielectric constant of the semiconductor member, and the relative dielectric constant of the first insulating layer is smaller than the relative dielectric constant of the second insulating layer.

A coating facility including: a first base outer surface coating zone; a second base inner surface coating zone; a second base outer surface coating zone; a clear inner surface coating zone and a clear outer surface coating zone; and a baking zone in which each wet coating film are simultaneously baked and cured.

Coating facility and coating method

The present invention provides a compound represented by the following formula [1] or a pharmaceutically acceptable salt thereof which has an excellent NHE3 inhibitory effect:A-Y&#x2003;&#x2003;[1]wherein  

Phenyl tetrahydroisoquinoline compound substituted with heteroaryl

The present invention relates to a photochromic film comprising a photochromic dye and a resin component. The photochromic film has a nanoindentation hardness of equal to or greater than 800 nm on at least one of surfaces, surface A, thereof. The present invention further relates to a method of manufacturing a photochromic lens. The method of manufacturing a photochromic lens of the present invention comprises forming a photochromic film having a nanoindentation hardness ranging from 500 to 5000 nm on an outermost surface thereof as well as having a smaller nanoindentation hardness on a surface facing a first mold than that on the outermost surface by coating a photochromic liquid comprising a photochromic dye and a curable component on one surface of the first mold for formation of one of surfaces of a lens and subjecting the photochromic liquid to curing treatment, and a photochromic lens comprising a photochromic film on a lens substrate is obtained by means of the above first mold.

Photochromic film, photochromic lens comprising the same, and method of manufacturing photochromic lens

Control unit for air compressor with graphical user interface

Control unit for air compressor

Air compressor

A heteroaromatic methyl cyclic amine derivative represented by formula (IA) or a pharmaceutically acceptable salt thereof is useful for treatment or prophylaxis of diseases such as sleep disorder, depression, anxiety disorder, panic disorder, schizophrenia, drug dependence, Alzheimer's disease, Parkinson's disease, Huntington's disease, eating disorder, cephalalgia, hemicrania, pain, digestive diseases, epilepsy, inflammation, immune-related diseases, endocrine-related diseases and hypertension, on the basis of an orexin (OX) receptor antagonist activity. 

Heteroaromatic methyl cyclic amine derivative

Growing community of inventors

Tokyo, Japan

Hiroshi Ohta