Honda Motor Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Biofermin Pharmaceutical Co., Ltd.

Toyo Tire & Rubber Co., Ltd.

Toyo Boseki Kabushiki Kaisha

Panasonic Holdings Corporation

Public University Corporation Yokohama City University

Asahi Group Holdings, Ltd.

Pansonic Corporation

Hiroshi Ohno

Tetsuzo Ueda

Takahiro Naka

Norio Suzuki

Tomoko Morita

Masaki Shimakawa

Naohiro Sato

Tadao Nakatsuji

Akihiko Ishibashi

Satoshi Tamura

Kazuhiko Yamanaka

Kazuhiro Eguchi

Katsuji Wada

Toshiharu Noguchi

Hiroshi Kawakami

Seiichi Nakada

Katsushi Saito

Yoshiki Tanaka

Tsuneo Nishijima

Kentaro Miyano

Kenya Yamashita

Kenji Orita

Naoyuki Yamamoto

Hideki Kasugai

Jun Iwamoto

Masaki Nobuoka

Naoya Ryoki

Akio Ueta

Go Motohashi

Norio Ikedo

Masao Kawaguchi

Osami Yamamoto

Atsushi Nakajima

Koichi Inaba

Naohiro Satoh

Hitoshi Ueno

Eiichi Imazu

Keita Ishizaki

Takaomi Kessoku

Shinji Fukuda

Tomohiro Kawahara

Fumihiro Mondori

Sae Hyakutake

Tatsuhiko Hirota

Mayuki Toriumi

Hiromi Yoshikawa

Yosuke Oikawa

Ayako Maeda

Yasuhiro Isa

Hideki Yamamura

Naoki Ohya

Naoki Mitsuda

A laser module includes: a laser diode bar including a plurality of emitters configured to emit laser light from a front surface and leak light from a rear surface; a housing including a reflecting surface configured to surround a space together with the laser diode bar and reflect, toward the space, light leaked from the rear surface, in a scattering manner; and a detector configured to detect light reflected by the reflecting surface. A laser module includes: a laser diode bar including a plurality of emitters configured to emit laser light from a front surface and leak light from a rear surface; a condenser lens on which light leaked from rear surfaces of all of the plurality of emitters impinges; and a detector configured to detect light transmitted through the condenser lens.

Laser module, laser oscillator and laser processing system

In a WBC system of the present disclosure, an LD bar array constituted by a plurality of LD bars is configured such that a main axis direction of an off-angle of at least one LD bar is reversed with respect to a main axis direction of an off-angle of the other LD bar. By doing so, even in the LD bar in which a wavelength distribution in a wafer exists, a difference between a designed lock wavelength and a gain peak wavelength can be kept within a range where an LD oscillation due to an external resonance is possible for all emitters in the LD bar, thereby an output in the WBC system can be maximized.

Wavelength beam combining system and method for manufacturing laser diode bar array

A wavelength conversion device including a cavity that includes an RAMOcrystal having a single crystal represented by a first general formula of RAMO, a laser crystal, and a mirror, in which in the first general formula, R represents one or a plurality of trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or a plurality of trivalent elements selected from the group consisting of Fe (III), Ga, and Al, and M represents one or a plurality of divalent elements selected from the group consisting of Mg, Mn, Fe (II), Co, Cu, Zn, and Cd.

Wavelength conversion device

Provided is an agent having an action on a transcellular ion transporter in the intestinal tract, the agent containing a bacterium of the genusor the genus, or a treated product thereof, with the proviso that the case where the ion transporter is a chloride channel and the action is inhibition; the case where the ion transporter is NaKClcotransporter (NKCC1) and the action is inhibition; the case where the bacterium is35624; and the case where the bacterium isUCC118 are excluded. The agent of the present invention is useful in activation of chloride channels, prevention or treatment of renal diseases, and/or promotion of defecation, and therefore, usable as a medicament, a supplement, etc.

Agent acting on transcellular ion transporter in intestinal tract, agent for activating chloride channel, agent for preventing or treating renal disease, or agent for promoting defecation

An object of the present invention is to provide an agent for preventing or treating a fat-associated disease and/or inflammation. The present invention provides an agent for preventing or treating a fat-associated disease and/or inflammation, the agent comprising abacterium or a processed product thereof.

Agent for preventing or treating fat-associated diseases and/or inflammation

An object of the present invention is to provide an agent for preventing or treating small intestinal injury induced by an NSAID with a half-life of less than 14 hours and a proton pump inhibitor. The present invention provides an agent for preventing or treating small intestinal injury induced by a non-steroidal anti-inflammatory drug with a half-life of less than 14 hours and a proton pump inhibitor, and an agent for preventing or treating a fat-associated disease and/or inflammation accompanying the small intestinal injury, the agents comprising abacterium or a processed product thereof.

Agent for preventing or treating small intestinal injury induced by specific NSAID and PPI

To provide a high-quality group III nitride semiconductor. A group III nitride semiconductor including an n-GaN layer composed of AlGaN (0&#x2264;x&#x3c;1), an InGaN layer disposed on the n-GaN layer and composed of InGaN, an n-AlGaN layer disposed on the InGaN layer and composed of n-type AlGaN (0&#x2264;y&#x3c;1), and a functional layer disposed on the n-AlGaN layer, wherein the concentration of Mg in the n-GaN layer is higher than the concentration of Mg in the n-AlGaN layer.

Group III nitride semiconductor with InGaN diffusion blocking layer

A flip-chip light emitting diode element capable of reducing lateral resistance. The flip-chip light emitting diode element includes a stacked body structure configured by sequentially stacking a first n-type group III nitride semiconductor layer having a carrier concentration that is at least 1&#xd7;10cmbut less than 3&#xd7;10cm, a second n-type group III nitride semiconductor layer having a carrier concentration that is at least 5&#xd7;10cmbut less than 1&#xd7;10cm, a light-emitting layer formed by a group III nitride semiconductor, and a p-type group III nitride semiconductor layer. A height of unevenness on an interface between the first n-type group III nitride semiconductor layer and the second n-type group III nitride semiconductor layer is greater than that of unevenness of an interface between the second n-type group III nitride semiconductor layer and the light emitting layer.

Light emitting diode element and method for manufacturing same

This invention provides a means for screening for lactic acid bacteria having immunoregulatory functions in a simple and rapid manner. This invention provides a method for screening for or producing lactic acid bacteria having immunoregulatory functions comprising determining the number of the test lactic acid bacteria bound to the uromodulin (Umod) protein, lactic acid bacteria obtained by such method, and an immunoregulatory composition comprising such lactic acid bacteria.

Method for screening lactic acid bacteria having immunoregulatory function

An image display device which reduces speckles in an image display device using a laser source includes: a laser source which emits excitation light; a collecting lens which collects the excitation light; a deflecting element which scans the excitation light collected by the collecting lens; and a light conversion panel which converts a wavelength of the excitation light scanned by the deflecting element and emits fluorescence, wherein the light conversion panel includes a plurality of phosphor layers which are planarly disposed, absorb the excitation light, and emit the fluorescence.

Image display device which reduces mutual interference of light reflected by a screen

A semiconductor light-emitting device includes a substrate; a first cladding layer formed on the substrate; a first guide layer formed on the first cladding layer; an active layer formed on the first guide layer; a second guide layer formed on the active layer; a contact layer formed on the second guide layer; a cladding electrode formed on the contact layer, and made of conductive metal oxide; and a pad electrode electrically coupled to the cladding electrode. The semiconductor light-emitting device includes a mesa structure including the contact layer. The cladding electrode has a greater width than the mesa structure. The cladding electrode covers an upper surface and side surfaces of the mesa structure, and is electrically coupled to the contact layer.

Semiconductor light-emitting device

A nitride semiconductor light-emitting device having an optical waveguide includes, in the following order, at least: a first cladding layer; an active layer; and a second cladding layer, wherein the second cladding layer includes (i) a transparent conductive layer comprising a transparent conductor and (ii) a nitride semiconductor layer comprising a nitride semiconductor, the nitride semiconductor layer being formed closer to the active layer than the transparent conductive layer.

Nitride semiconductor light-emitting device

A hypoglycemic effect enhancer for enhancing the activity of an &#x3b1;-glucosidase inhibitor, the enhancer comprising at least one kind of bacteria selected from the group consisting of bifidobacteria, lactic acid bacteria, saccharifying bacteria, and butyric acid bacteria.

Hypoglycemic effect enhancer

A semiconductor light emitting device includes a multilayer structure formed on a substrate and including a plurality of semiconductor layers including a light-emitting layer. The multilayer structure includes an optical waveguide having ridge structure provided at an upper part of the multilayer structure. The optical waveguide extends from a front facet to a rear facet of the multilayer structure, and includes a straight waveguide section which is inclined to a normal to the front facet of the multilayer structure and extends from the front facet, and a curved waveguide section which perpendicularly reaches the rear facet of the multilayer structure. The curved waveguide section is closer to the rear facet of the multilayer structure than a center of the optical waveguide is.

Semiconductor light emitting device

Growing community of inventors

Osaka, Japan

Hiroshi Ohno