Sony Corporation

Nikon Corporation

Sharp Kabushiki Kaisha Corporation

Semiconductor Energy Laboratory Co., Ltd.

Nippon Kogaku K.k.

Nanosys, Inc.

Toppan Printing Co., Ltd.

Nikkiso Company Limited

Hiroshi Ohki

Chiaki Kojima

Takashi Otobe

Toshiyuki Kashiwagi

Jun Iwasaki

Junichi Koezuka

Hiroshi Iwata

J Wallace Parce

Akihide Shibata

Masashi Tanaka

Paul John Schuele

David P Stumbo

Xiangfeng Duan

Francisco A Leon

Motohiro Furuki

Takashi Shionoya

Hideki Akasaka

Jeffrey L Miller

James M Hamilton

Shunpei Yamazaki

Daisuke Matsubayashi

Shoei Kobayashi

Yuichi Sato

Yusuke Nonaka

Toru Takagi

Haruo Watanabe

Kenji Yokoyama

Yasuhito Inagaki

Tsutomu Noguchi

Kazuya Okamoto

Isao Sugaya

Hidehiro Ogawa

Wataru Funamizu

Shigeru Aoki

Masao Urayama

Masaaki Doi

Katsumasa Fujii

Tomoya Noda

Tetsu Negishi

Yosuke Okudaira

Yuzuru Yanagisawa

Samuel Edward Martin

Cheri X Y Pereira

Yasunobu Okada

Taku Hasegawa

Mami Goto

Kuninori Shino

Osamu Saruwatari

Riho Kataishi

Keiji Moriyama

Sota Nakanishi

Yutaka Iwasaki

Atsunori Hiratsuka

Kunio Konno

Yojiro Tezuka

Takuya Wada

Yuji Maruo

Koji Sakairi

Masashi Okada

Yoshiro Joichi

Naoki Ohkouchi

Takashi Kyotani

Satoru Kumagai

Akio Takahama

Akira Tomita

Satonari Akutsu

Toshiaki Tsutsui

Kayoko Hasegawa

Toyokazu Noda

Kenji Fujii

Rieko Arimoto

Yasuhiro Tsukada

Tsunaki Tsunesada

Keitarou Matsui

An acquiring unit of a structured illuminating microscopy apparatus acquires at least two modulated images having the same wave number vector and the different phases; and a calculating unit of the structured illuminating microscopy apparatus, in a spatial frequency spectrum of each of at least the two modulated images acquired by the acquiring unit, separates a 0th-order modulating component and &#xb1;first-order modulating components of observational light fluxes superimposed on arbitrary two observation points based on at least four observation values regarding the two observation points which are mutually displaced by an amount of the wave number vector.

Structured illuminating microscopy apparatus

A microscope system as an optical microscope system for observing a specimen includes: an imaging optical system that forms an image of transmitted light or reflected light from the specimen; an illumination light source that illuminates illumination light on the specimen; an illumination optical system that has a first spatial light modulation element, which changes intensity distribution of the illumination light at a conjugate position of a pupil of the imaging optical system, and illuminates light, which is originated from the illumination light source, on the specimen; an image sensor that detects light through the imaging optical system; and a calculation section that calculates the intensity distribution of the illumination light appropriate for observation of the specimen on the basis of the intensity distribution of the illumination light formed by the first spatial light modulation element and output data detected by the image sensor.

Microscope system

Provided is an image processing apparatus including as image acquiring section that acquires a plurality of images obtained by imaging, at different times, a subject irradiated with lights intensity-modulated with a plurality of modulation frequencies or modulation frequency bands; and a demodulating section that demodulates pixel values of the plurality of images with a plurality of demodulation frequencies or demodulation frequency bands based on the plurality of modulation frequencies or modulation frequency bands, for each pixel, thereby generating a plurality of pieces of pixel information indicating subject light amounts from the subject caused by each of the lights intensity-modulated with the plurality of modulation frequencies or modulation frequency bands, for each pixel.

Image processing apparatus, imaging apparatus, and machine-readable medium storing a program

A detector comprises a plurality of photoelectric converters to output an electrical signal corresponding to an incident light, and a plurality of filter circuits provided corresponding to each of the plurality of photoelectric converters or to each of a plurality of element groups respectively including a predetermined number of the photoelectric converters of the plurality of photoelectric converters, the plurality of filter circuits attenuating a signal having a predetermined frequency from the electrical signal output from the plurality of photoelectric converters, In the above-described detector, the plurality of photoelectric converters may be provided in a first substrate, and the plurality of filter circuits may be provided in a second substrate laminated on the first substrate.

Detector, detector with lock-in amplifier, substrate, and method for manufacturing a detector

An imaging device with excellent imaging performance is provided. An imaging device that easily performs imaging under a low illuminance condition is provided. A low power consumption imaging device is provided. An imaging device with small variations in characteristics between its pixels is provided. A highly integrated imaging device is provided. A photoelectric conversion element includes a first electrode, and a first layer, a second layer, and a third layer. The first layer is provided between the first electrode and the third layer. The second layer is provided between the first layer and the third layer. The first layer contains selenium. The second layer contains a metal oxide. The third layer contains a metal oxide and also contains at least one of a rare gas atom, phosphorus, and boron. The selenium may be crystalline selenium. The second layer may be a layer of an In&#x2014;Ga&#x2014;Zn oxide including c-axis-aligned crystals.

Photoelectric conversion element and imaging device

In order to keep the crystallinity of the semiconductor thin film layer high, a temperature of a semiconductor substrate during hydrogen ion addition treatment is suppressed to lower than or equal to 200&#xb0; C. In addition, the semiconductor substrate is subjected to plasma treatment while the semiconductor substrate is kept at a temperature of higher than or equal to 100&#xb0; C. and lower than or equal to 400&#xb0; C. after the hydrogen ion addition treatment, whereby Si&#x2014;H bonds which have low contribution to separation of the semiconductor thin film layer can be reduced while Si&#x2014;H bonds which have high contribution to separation of the semiconductor thin film layer, which are generated by the hydrogen ion addition treatment, are kept.

Manufacturing method of SOI substrate

A biological molecule separation apparatus for separating a biological molecule of one embodiment of the present invention has a buffer solution chamber receiving a buffer solution, a separation electrode arranged in the buffer solution chamber, a biological molecule separation medium for separating a biological molecule, a biological molecule adsorption film for adsorbing a biological molecule, a pair of transfer electrodes having a plurality of line shaped conductors extending in a direction perpendicular to a first direction, the conductors being arranged in the direction perpendicular to the first direction, and a separation part which holds the transfer electrode, the biological molecule adsorption film, the medium and the transfer electrode, wherein the transfer electrode, the biological molecule adsorption film, the medium and the transfer electrode are stacked in this order.

Biological molecule separation apparatus

The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.

Methods for nanowire alignment and deposition

Doping with suppressed filament deterioration can be performed even in the case of doping in various conditions with an ion doping apparatus having a filament. After ion doping is completed, supply of a material gas is stopped and hydrogen or a rare gas is kept to be supplied. After that, current of the filament is decreased and correspondingly, filament temperature is decreased. Accordingly, in decreasing the filament temperature, the material gas around the filament has been replaced with hydrogen or a rare gas.

Manufacturing method of semiconductor device

A small, thin, light piezoelectric transformer capable of large-capacity output is provided at low cost. In piezoelectric transformers adjacent to each other in the row direction, a lower electrode extends in the column direction in a supporting substrate, so as to connect a plurality of piezoelectric transformers arranged in the column direction. Referring to FIGS.() and() as well, the piezoelectric substrates of the piezoelectric transformers adjacent to each other in the row direction are connected via the lower electrode or an upper electrode wire that collectively connects the piezoelectric transformers arranged in the column direction. Meanwhile, the piezoelectric substrates of the piezoelectric transformers adjacent to each other in the column direction are connected via a right electrode wire or a left electrode wire that collectively connects the piezoelectric transformers arranged in the row direction. With this structure, by applying a voltage between the cross right electrode wire or left electrode wire and the upper electrode wire or the lower electrode that crosses the wires, it becomes possible to gain access to an arbitrary set (pair) of piezoelectric transformers. Note that, upon access, four piezoelectric transformers adjacent to one another in the row and column directions are operated. While it goes without saying that more piezoelectric transformers can be operated by applying a voltage to the electrodes, operation is based on a set of four piezoelectric transformers.

Piezoelectric transformer and the method for manufacturing the same

The difficulty of miniaturization of large-scale integrated circuits in electric devices based on the conventional techniques involving three-dimensional device structures or the introduction of novel materials is solved. Wiresandare disposed to intersect one another in midair in a matrix. The ends of the wiresandin midair are designed to be in direct contact with the insides of a package which contains a semiconductor device so that electrical connection and/or physical support can be acquired. Cross pointwhere wiresandare in contact with each other is a region which has current switching function similar to the function of a channel of a common MOSFET. Cross pointis a region where base wirefunctioning as a substrate and gate electrode wirefunctioning as a control electrode (gate electrode) intersect in contact with one another, or a region where base wireand a lead wire 4 overlap. The diameter and length of the wires as well as the distance therebetween can be designed as desired based on desired device specifications. The semiconductor device is insulated by gas (which is sealed with resin e.g. as the case may be) or vacuum except for an isolation region formed in base wire

Wire cross-point fet structure

Growing community of inventors

Yokohama, Japan

Hiroshi Ohki