Kabushiki Kaisha Toshiba

Hitachi Chemical Company, Ltd.

Fujitsu Corporation

Other

Fujitsu Semiconductor Limited

Fujitsu Microelectronics Limited

Fujitsu Vlsi Limited

Fujitsu Limited & Fujitsu Vlsi Limited

Hiroshi Nomura

Fumio Inoue

Toshimi Ikeda

Masaya Katayama

Shinsuke Hagiwara

Naoki Fukutomi

Yoshiaki Tsubomatsu

Toshio Yamazaki

Noriyuki Taguchi

Junichi Imaizumi

Hirohito Ohhata

Masahiro Kuwamura

Motoo Nakano

Kenji Konomi

Fumihiko Inoue

Masakatsu Suzuki

Junichi Ishikawa

Kouichi Nagao

Eikichi Satou

Iwao Higashikawa

Naoyuki Urasaki

Akishi Nakaso

Tatsuhiko Higashiki

Takashi Saiki

Junichiro Iba

Kiyoshi Hasegawa

Kouichi Tsuyama

Akitoshi Kumagae

Akinari Kida

Takuya Kouno

Tsunehisa Sakoda

Shuichi Hatakeyama

Koushi Sakairi

Koji Asakawa

Taiji Ema

Takashi Sato

Soichi Inoue

Masanori Takahashi

Kazuya Sato

Tadahito Fujisawa

Manabu Takakuwa

Daisuke Kawamura

Satoshi Otsuka

Ichiro Mori

Yoshihiro Takao

Takuya Kono

Michiari Kawano

Shigeru Ishibashi

Takuji Tanaka

Masaaki Higashitani

Toru Ozaki

Yuichi Motoi

Keita Asanuma

Yasunori Iriyama

Kenji Hoshi

Hiroaki Takahashi

Hajime Nakamura

Yasushi Katoh

Takato Oti

Yi-Yu Shi

The embodiments relate to a method of calculating an image for simulating by calculation an image imaged by a projection optical system. In this method, a Stokes vector showing a characteristic of an illumination light is acquired first. Next, this Stokes vector is divided into a polarized light component vector and a non-polarized light component vector. The polarized light component vector is divided into a first coherent component vector and a first non-coherent component vector. The non-polarized light component vector is divided into a second coherent component vector and a second non-coherent component vector. Then, imaging calculation is performed at least for the first coherent component vector and the second coherent component vector, respectively.

Image calculation method

Four regions (a narrow NMOS region, a wide NMOS region, a wide PMOS region, and a narrow PMOS region) are defined on a semiconductor substrate. Then, after a gate insulating film and a polysilicon film are sequentially formed on the semiconductor substrate, n-type impurities are introduced into the polysilicon film in the wide NMOS region. Next, by patterning the polysilicon film, gate electrodes are formed in the four regions. Then, n-type impurities are introduced into the gate electrodes in the narrow NMOS region and the wide NMOS region. As a result, an impurity concentration of the gate electrode in the narrow NMOS region becomes lower than that of the gate electrode in the wide NMOS region.

Method of fabricating field effect transistors with different gate widths

Field effect transistors with different gate widths

A semiconductor device includes a plurality of chips comprising a plurality of first moisture-proof rings individually surrounding said plurality of chips, a second moisture-proof ring surrounding the entire plurality of chips, and a wire for connecting said plurality of chips to each other.

Semiconductor device and manufacturing method thereof

A photo mask includes an asymmetrical diffraction grating pattern in which diffraction efficiencies of plus primary diffracted light and minus primary diffracted light are different, the asymmetrical diffraction grating pattern including a shielding portion which shields light, a first transmitting portion which transmits light, and a second transmitting portion which transmits light, a ratio of widths of the shielding portion, the first transmitting portion, and the second transmitting portion being n11 where n is a positive real number except 2, the asymmetrical diffraction grating pattern approximately satisfying 163&#xb0;&#x2266;360&#xb0;/(n+2)+&#x3b8;&#x2266;197&#xb0; where &#x3b8; (&#x2260;90&#xb0;) indicates an absolute value of a difference between a phase of the light transmitted through the first transmitting portion and that of the light transmitted through the second transmitting portion, and a reference pattern for obtaining an image as a reference for measuring a shift of an image of the asymmetrical diffraction grating pattern.

Photo mask, focus measuring method using the mask, and method of manufacturing semiconductor device

A polarization evaluation mask for evaluating the state of polarization of an illumination light in exposure equipment comprises a transparent substrate; a light interceptor formed in said transparent substrate and having a plurality of fine apertures; a plurality of polarizers formed to cover said plurality of fine apertures and having orientation angles of the transmissive polarization differing in increments of certain angle; and a plurality of quarter-wave plates arranged upstream of said illumination light than said polarizers and formed as superimposed on said polarizers to cover said fine apertures, and having orientation angles of the fast axis differing in increments of certain angle. Each of said plurality of fine apertures has a different combination of said orientation angle of said polarizer and said orientation angle of said quarter-wave plate.

Polarization evaluation mask, polarization evaluation method, and polarization determination device

Strip-shaped alignment marksare juxtaposed with each other in a silicon oxide filmformed on a silicon wafer. Each alignment markcomprises a plurality of groovesformed side by side in the silicon oxide film. An amorphous silicon filmis buried in the grooves. Thus, the alignment marksare formed in a thus-formed line-and-space pattern. Accordingly, waveforms of detected signals having high contrast and little deformation can be obtained, and alignment of wafers with high accuracy can be realized.

Alignment sensing method for semiconductor device

A polarizing element is disclosed which includes a smooth glass substrate and a polarization layer formed thereon, the polarization layer having polarization characteristics for the incident light. The polarization layer is made of a carbon-based substance including carbon atoms. The carbon atoms are continuously connected via carbon-carbon double bonds having [pi] electron clouds. The [pi] electron clouds have average continuous distance of 100 nm or more in a longitudinal direction and have an average continuous distance less than 50 nm in a transverse direction. The carbon-based substance is formed in such a way that a plurality of the [pi] electron clouds have longitudinal directions which are in parallel along the glass-substrate surface.

Polarizing element, method of manufacturing polarizing element, method of evaluating exposure apparatus, method of manufacturing semiconductor device, and exposure apparatus

The semiconductor device comprises a resistance elementformed of polysilicon film formed on a silicon substrate, which includes a resistor parthaving a resistance value set at a prescribed value, contact partsformed on both sides of the resistor partand connected to a line for applying a fixed potential, and a heat radiation partconnected to the contact part, whereby the semiconductor device can include the resistance element having a small parasitic capacitance and good heat radiation.

Semiconductor device

In an exposure apparatus, light flux from a light source is serially converted into any of a plurality of polarized light beams perpendicular to each other on Poincare sphere and is output. This polarized light beam is injected into a projection optical system or the like to be converted into a converted polarized light beam based. With a linear polarizer or a linear phase retarder being properly inserted into an optical path of the converted polarized light beam, a light intensity is measured. Stokes parameters of the converted polarized light beam are calculated based on the measured light intensity.

Exposure apparatus

A semiconductor device includes a semiconductor substrate of a first conductivity type, a well of the first conductivity type formed in the semiconductor substrate, a transistor formed in the well, a diffusion region of a second conductivity type formed in the semiconductor substrate so as to cover a lateral side and a bottom edge of the well, a terminal formed on the semiconductor substrate at an outside part of the diffusion region, and a conductive region contacting with the well, the well being in ohmic contact with the terminal via the conductive region and the semiconductor substrate, the conductive region having an impurity concentration level exceeding an impurity concentration level of the semiconductor substrate.

Semiconductor device and fabrication process thereof

A semiconductor package substrate is provided, which can meet the move toward high integration of semiconductors. A nickel layer is plated on an electroplated copper foil to form a wiring pattern. An LSI chip is mounted on the copper foil, and terminals of the LSI chip and the wiring pattern are connected by wire bonding, followed by sealing with a semiconductor-sealing epoxy resin. Only the copper foil is dissolved away with an alkali etchant to expose nickel. With a nickel stripper having low copper-dissolving power, the nickel layer is removed to expose the wiring pattern. A solder resist is coated, and a pattern is formed in such a way that connecting terminal portions are exposed. Solder balls are placed at the exposed portions of the wiring pattern and are then fused. The wiring pattern is connected to an external printed board via the solder balls.

Fabrication process of semiconductor package and semiconductor package

A method is provided for measuring Mueller Matrix of an optical system of an exposure apparatus. Light flux from a light source is serially converted into any of a plurality of polarized light beams perpendicular to each other on Poincare sphere and is output. This polarized light beam is injected into a projection optical system or the like to be converted into a converted polarized light beam based on Mueller matrix of each optical system. With a linear polarizer or a linear phase retarder being properly inserted into an optical path of the converted polarized light beam, a light intensity is measured. Stokes parameters of the converted polarized light beam are calculated based on the measured light intensity.

Exposure apparatus and method of measuring Mueller Matrix of optical system of exposure apparatus

An evaluation mask for evaluating a projection-type exposure apparatus, the mask including at least one diffraction grating pattern for producing a diffracted light of the positive first-order and a diffracted light of negative first-order, diffraction efficiencies of the diffracted lights being different respectively, one of the diffracted lights having a magnitude that is zero, and an image of the at least one diffraction grating pattern being projected onto a test substrate by the projection-type exposure apparatus, and a reference pattern for obtaining a reference image to measure a displacement of the image of the diffraction grating pattern, and an image of the reference pattern being projected onto the test substrate or the image detector by the projection-type exposure apparatus, wherein the images of the diffraction grating pattern and the reference pattern projected onto the test substrate or the image detector are used for evaluating the projection-type exposure apparatus.

Evaluation mask, focus measuring method and aberration measuring method

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Kawasaki, Japan

Hiroshi Nomura