Nikon Corporation

Ebara Corporation

Toshiba Lifestyle Products & Services Corporation

Other

Hiroshi Nishimura

Toru Takagi

Naoto Kihara

Akihiro Goto

Muneki Hamashima

Mamoru Nakasuji

Nobuharu Noji

Tohru Satake

Takeshi Murakami

Shoji Yoshikawa

Kinya Kato

Toshifumi Kimba

Tsutomu Karimata

Hirosi Sobukawa

Kazuya Okamoto

Shin Oowada

Junji Ikeda

Kenji Watanabe

Mutsumi Saito

Satoshi Nagai

Masashi Tanaka

Hideo Mizutani

Yasuhiro Komori

Hironori Sasaki

Tomonori Uchiyama

Yoshinori Usui

Mitsumi Saito

Katsunori Matsushita

A minute bubble generator includes a flow path member including a flow path allowing a liquid to pass therethrough; and a colliding part provided in the flow path and generating minute bubbles in the liquid passing through the flow path by locally reducing a cross sectional area of the flow path. The colliding part is formed integrally with the flow path member and is provided closer to an upstream end or a downstream end relative to a lengthwise center of the flow path.

Minute bubble generator, home appliance provided with minute bubble generator, and method of manufacturing minute bubble generator

A washing machine includes: a washing tub in which clothes are stored; and a water supply mechanism for supplying water into the washing tub through a water supply path, the water being supplied from a water supply source. The water supply mechanism includes a water supply valve for opening and closing the water supply path, a water filling case for filling water into the washing tub, and a fine bubble generation device provided between the water supply valve and the water filling case and for generating fine bubbles.

Washing machine

The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.

Electron beam apparatus and method of manufacturing semiconductor device using the apparatus

Charged-particle-beam (CPB) mapping projection-optical systems and adjustment methods for such systems are disclosed that can be performed quickly and accurately. In a typical system, an irradiation beam is emitted from a source, passes through an irradiation-optical system, and enters a Wien filter ('E&#xd7;B'). Upon passing through the E&#xd7;B, the irradiation beam passes through an objective-optical system and is incident on an object surface. Such impingement generates an observation beam that returns through the objective-optical system and the E&#xd7;B in a different direction to a detector via an imaging-optical system. An adjustment-beam source emits an adjustment beam used for adjusting and aligning the position of, e.g., the object surface and/or the Wien's condition of the E&#xd7;B. The adjustment beam can be off-axis relative to the objective-optical system. For such adjusting and aligning, fiducial marks (situated, e.g., in the plane of the object surface) can be used that are optimized for the CPB-optical system and the off-axis optical system. Desirably, the image formed on the detector when electrical voltage and current are not applied to the E&#xd7;B is in the same position as the image formed on the detector when electrical voltage and current are applied to the E&#xd7;B. Also provided are 'evaluation charts' for use in such alignments that do not require adjustment of the optical axis of the irradiation-optical system, and from which the kinetic-energy distribution of the emitted adjustment beam is stable.

Charged-particle-beam mapping projection-optical systems and methods for adjusting same

Charged-particle-beam (CPB) mapping projection-optical systems and adjustment methods for such systems are disclosed that can be performed quickly and accurately. In a typical system, an irradiation beam is emitted from a source, passes through an irradiation optical system, and enters a Wien filter (&ldquo;E&times;B&rdquo;). Upon passing through the E&times;B, the irradiation beam passes through an objective optical system and is incident on an object surface. Such impingement generates an observation beam that returns through the objective optical system and the E&times;B in a different direction to a detector via an imaging optical system. An adjustment-beam source emits an adjustment beam used for adjusting and aligning the position of, e.g., the object surface and/or the Wien's condition of the E&times;B. The adjustment beam can be off-axis relative to the objective-optical system. For such adjusting and aligning, fiducial marks (situated, e.g., in the plane of the object surface) can be used that are optimized for the CPB optical system and the off-axis optical system. Desirably, the image formed on the detector when electrical voltage and current are not applied to the E&times;B is in the same position as the image formed on the detector when electrical voltage and current are applied to the E&times;B. Also provided are &ldquo;evaluation charts&rdquo; for use in such alignments that do not require adjustment of the optical axis of the irradiation optical system, and from which the kinetic-energy distribution of the emitted adjustment beam is stable.

A main control system prepares, in advance, a voltage map showing the amount of focus deviation of a secondary electron beam B at a detection surface of an electron beam detector corresponding with the amount of charge-up generated on a sample upon irradiation with a primary electron beam B and stores this voltage map in a storage device During an observation, the main control system reads the voltage map stored in the storage device and corrects the focal position of the secondary electron beam B by controlling either the voltage applied to the secondary optical system or the voltage applied to the sample As a result, focal position deviations resulting from charge-up generated on the sample being observed can be corrected without causing inconvenience to an operator.

Apparatus and method for defect detection using charged particle beam

Electron-optical systems are disclosed that are especially useful in mapping-projection electron microscopy and related uses. The systems achieve high magnification with excellent control of aberrations, and low magnification at wide optical fields with excellent control of aberrations.

Electrostatic lens systems for secondary-electron mapping-projection apparatus, and mapping-projection apparatus and methods comprising same

Electron beam type inspection device for generating images of specimens (e.g., silicon wafers, etc.) includes an electron gun which emits an electron beam, an electron beam optical system which causes the electron beam to form an irradiation region on a surface of a specimen, a detector which detects at least one of second order electrons and reflected electrons reflected by the irradiation region, a projection optical system projecting the second order electrons and the reflected electrons onto a detection surface within the detector. The second order electrons and the reflected electrons correspond to an observation region within the irradiation region. The inspection device also includes a magnification controller which controls the size of the observation region and the magnification of the projection optical system, and an irradiation controller which controls the current density of the irradiation region based on the size of the observation region. Also provided is a method of making a corresponding inspection device which includes steps of providing and assembling the aforementioned component parts.

Electron beam type inspection device and method of making same

Lens systems are disclosed each of which providing a variable magnification telecentric optical system in which lateral magnification can be varied while maintaining constant image position and telecentricity. The lens system comprises, from the object side, first, second, and third lens groups disposed on an optical axis. The first and third lens groups each have positive refractive power. The second lens group is afocal. While varying the lateral magnification, the object and image positions remain fixed and telecentricity of the lens system (on both the object and image sides) is maintained. Lateral magnification is varied by axially moving lenses in one or more of the first, second, and third lens groups.

Variable-magnification telecentric optical system

Growing community of inventors

Kawasaki, Japan

Hiroshi Nishimura