Fujitsu Semiconductor Limited

Fujitsu Corporation

Fujitsu Microelectronics Limited

Hiroshi Namba

Kenichi Watanabe

Toyoji Sawada

Junichi Mitani

Michiari Kawano

Kazuo Sukegawa

Takumi Hasegawa

A method of manufacturing a semiconductor device including an integrated circuit part in which an integrated circuit is formed and a main wall part including metal films surrounding said integrated circuit part, includes the step of selectively forming a sub-wall part including metal films between the integrated circuit part and the main wall part, in parallel to formation of the integrated circuit part and the main wall part. A sub-wall part which is in an 'L' shape is provided between each corner of the main wall part and the integrated circuit part of the resulting semiconductor device.

Semiconductor device, method of manufacturing the same, and phase shift mask

A main wall part is provided so as to surround an integrated circuit part. A sub-wall part which is in 'L' shape is provided between each corner of the main wall part and the integrated circuit part. Therefore, even if the stress is concentrated due to heat treatment or the like, the stress is dispersed to the main wall part and the sub-wall part, and hence peeling between layers and a crack are unlikely to occur, as compared with the conventional art. Further, even if the crack and the like occur at the corner, moisture from the outside hardly reaches the integrated circuit part when the main wall part and the sub-wall part are coupled to each other. For this reason, it is possible to ensure an extremely high moisture resistance.

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Kawasaki, Japan

Hiroshi Namba