Sharp Kabushiki Kaisha Corporation

Hiroshi Nakatu

Haruhisa Takiguchi

Hiroaki Kudo

Toshiyuki Okumura

Akinori Seki

Kazuhiko Inoguchi

Fumihiro Konushi

Satoshi Sugahara

Chitose Nakanishi

A semiconductor laser device having a mesa stripe whose side faces are facets of {111} planes is disclosed. In the laser device, a current blocking layer is formed on a semiconductor substrate whose main surface is a (100) plane, and a channel which is oriented along the &lt;011&gt; direction is formed in the current blocking layer. The mesa stripe is formed on the substrate within the channel by a selective growth technique. The mesa stripe has a multilayer structure including an active layer and is covered by a burying layer.

Semiconductor laser device

Growing community of inventors

Tenri, Japan

Hiroshi Nakatu