Sharp Kabushiki Kaisha Corporation

Hiroshi Nakatsuji

Naoki Makita

Masaki Yamanaka

Masahiro Fujiwara

Tsuyoshi Itoh

A semiconductor device according to the present invention includes a thin-film transistor and a thin-film diode. The respective semiconductor layers and of the thin-film transistor and the thin-film diode are crystalline semiconductor layers that have been formed by crystallizing the same crystalline semiconductor film. Ridges have been formed on the surface of the semiconductor layer of the thin-film diode. And the semiconductor layer of the thin-film diode has a greater surface roughness than the semiconductor layer of the thin-film transistor.

Semiconductor device, method for manufacturing same, and display device

Disclosed is a semiconductor device in which a thin film transistor and a thin film diode are provided on one same substrate, and the characteristics respectively required for the thin film transistor and the thin film diode are achieved. Specifically disclosed is a semiconductor device that includes an insulating layer () formed on the surface of a substrate (), and a thin film transistor and a thin film diode that are formed on the insulating layer (). A portion of the surface of the insulating layer (), which is positioned below a semiconductor layer () for the thin film diode, is provided with a first recessed and projected pattern (). Meanwhile, a portion of the surface of the insulating layer (), which is positioned below a semiconductor layer () for the thin film transistor, is not provided with the first recessed and projected pattern (). The surface of the semiconductor layer () for the thin film diode has a second recessed and projected pattern that reflects the shape of the first recessed and projected pattern ().

Disclosed is a method for manufacturing a semiconductor device that can improve the performance of a photodiode that is formed on a same substrate as a thin film transistor without greatly deteriorating the productivity of the semiconductor device. On a glass substrate, a base layerhaving a recesson the surface is formed, and on the base layer, an amorphous silicon thin filmis formed. The amorphous silicon thin filmis melted to form a crystalline silicon thin film, while moving the molten silicon into the recess. Of the silicon thin film, a silicon filmthat constitutes a portion of a thin film transistoris formed of the silicon thin filmin a part other than the recess, while a silicon filmthat constitutes a portion of a photodiodeis formed of the silicon thin filmin the recess

Semiconductor device and method for manufacturing same

A semiconductor device includes a thin film transistor and a thin film diode on a same substrate. A semiconductor layer () of the thin film transistor and a semiconductor layer () of the thin film diode are crystalline semiconductor layers formed by crystallizing the same non-crystalline semiconductor film. The thickness of the semiconductor layer () of the thin film diode is greater than the thickness of the semiconductor layer () of the thin film transistor, and the surface of the semiconductor layer () of the thin film diode is rougher than the surface of the semiconductor layer () of the thin film transistor.

A semiconductor device of the present invention is a semiconductor device including a thin film transistor and a thin film diode. A semiconductor layer () of the thin film transistor and a semiconductor layer () of the thin film diode are both crystalline semiconductor layers. The semiconductor layer () of the thin film transistor and the semiconductor layer () of the thin film diode respectively include portions formed by crystallizing the same amorphous semiconductor film. The thickness of the semiconductor layer () of the thin film diode is greater than the thickness of the semiconductor layer () of the thin film transistor. The difference between the thickness of the semiconductor layer () of the thin film transistor and the thickness of the semiconductor layer () of the thin film diode is greater than 25 nm. The surface roughness of the semiconductor layer () of the thin film diode is larger than the surface roughness of the semiconductor layer () of the thin film transistor. As a result, the thin film transistor and the thin film diode achieve respective required characteristics.

Growing community of inventors

Osaka, Japan

Hiroshi Nakatsuji