Sharp Kabushiki Kaisha Corporation

Hiroshi Nakatsu

Takahisa Kurahashi

Hiroyuki Hosoba

Tetsurou Murakami

Tetsuroh Murakami

Shouichi Ohyama

Kazuaki Sasaki

Osamu Yamamoto

Junichi Nakamura

Masanori Watanabe

Tadashi Takeoka

Saburo Yamamoto

Mitsuhiro Matsumoto

Atsushi Ogawa

Satoshi Komada

Jun-ichi Nakamura

Haruhisa Takiguchi

Toshiyuki Okumura

Mayuko Fudeta

Kazuhito Nagura

Masaki Kondo

Yoshihiko Tani

Kazuhiko Inoguchi

Takehisa Ishihara

Kiyohisa Ohta

Osamu Hamaoka

Tomoya Inoue

Hideki Ichikawa

Hideki Miyuki

Toshiaki Asai

Akio Aioi

Shouichi Ooyama

Hiroki Takaoka

Shouici Ooyama

Kentaro Nonaka

Kentaro Terashioma

A nitride semiconductor light emitting element is provided with: a substrate; a buffer layer that is provided on the substrate; a base layer that is provided on the buffer layer; an n-side nitride semiconductor layer that is provided on the base layer; an MQW light emitting layer that is provided on the n-side nitride semiconductor layer; and a p-side nitride semiconductor layer that is provided on the MQW light emitting layer. An x-ray rocking curve half-value width &#x3c9; (004) with respect to a (004) plane, i.e., the crystal plane of the nitride semiconductor, is 40 arcsec or less, or the x-ray rocking curve half-value width &#x3c9; (102) with respect to a (102) plane is 130 arcsec or less, and the rate P (80)/P (25) between light output P (25) at 25&#xb0; C. and light output P (80) at 80&#xb0; C. with a same operating current is 95% or more.

Nitride semiconductor light emitting element and method for manufacturing same

In a method of producing a nitride semiconductor light-emitting device including a nitride semiconductor active layer () held between an n-type nitride semiconductor layer () and a p-type nitride semiconductor layer (to) on a substrate (), at least any one of the n-type layer, the active layer and the p-type layer includes a multilayer film structure, and a surfactant material is supplied to a crystal growth surface just before, during or after crystal growth of a layer included in the multilayer film structure.

Method of producing nitride semiconductor light-emitting device using a surfactant material

A nitride semiconductor light-emitting device comprises a substrate, and a first n-type nitride semiconductor layer, an emission layer, a p-type nitride semiconductor layer, a metal layer and a second n-type nitride semiconductor layer stacked on the substrate successively from the side closer to the substrate, with an electrode provided on the surface of the second n-type nitride semiconductor layer or above the surface of the second n-type nitride semiconductor layer. The metal layer is preferably made of a hydrogen-storage alloy.

Nitride semiconductor light-emitting device providing efficient light extraction

A method of producing a nitride-based semiconductor device includes the steps of growing an InAlGaN (0&#x2266;x, 0&#x2266;y, x+y&#x3c;1) buffer layer () on a substrate () at a first substrate temperature, and growing a first conductivity type nitride-based semiconductor layer () on the buffer layer at a second substrate temperature. The first temperature is higher than the second temperature.

Method of producing nitride-based semiconductor device, and light-emitting device produced thereby

On a GaAs substrate (), are formed a DBR (Distributed Bragg Reflector) (), and a light-emitting layer () made of a plurality of layers of AlGaInP (0&#x2266;y&#x2266;1, 0&#x2266;z&#x2266;1) above the DBR (). A semiconductor layer or a plurality of semiconductor layers ()-() having a number of layers of 1 or more are formed on the light-emitting layer (), and a grating pattern for scattering light is formed on a surface of the semiconductor layer () by photolithography and by etching with a sulfuric acid/hydrogen peroxide based etchant. Thus, a semiconductor device small in radiation angle dependence of light emission wavelength, as well as a manufacturing method therefor, are provided.

Semiconductor light-emitting device and manufacturing method therefor

An n-type AlAs/n-type AlGaAs DBR layer and a p-type (AlGa)InP/p-type AlInP DBR layer are formed on an n-type GaAs substrate at specified intervals so that a reflection spectrum is centered at 650 nm and the resonance wavelength becomes 650 nm. A quantum well active layer (light-emitting layer) is formed so that the light emission peak wavelength becomes 650 nm in the belly position of the standing wave generated in a resonator constructed of both the DBR layers. A grating pattern is formed on the surface of a p-type AlGaAs light diffusion layer that serves as a light-emitting surface surrounded by a p-type electrode. By thus roughening the light-emitting surface, light emitted from the light-emitting layer is diffused in various directions, reducing the radiation angle dependency of the emission light wavelength.

Semiconductor light-emitting device and method for fabricating the device

A semiconductor light-emitting device exhibits high reflectance even with less number of pairs of light-reflecting layers, and allows light emitted from the active layer to be effectively extracted outside. This semiconductor light-emitting device is fabricated at good mass productivity by a semiconductor light-emitting device manufacturing method including the step of providing an active layer which generates light having a specified wavelength on a semiconductor substrate. On the semiconductor substrate, are stacked an AlGaAs layer and the active layer, in this order. Part of the AlGaAs layer with respect to the is changed into an AlOlayer (where y is a positive real number).

Method of manufacturing a semiconductor light-emitting device

A semiconductor laser device includes a one-body submount composed of a predetermined material such as SiC or AlN and placed on a mounting surface. A laser diode is placed on a front portion of an upper surface of the submount. A monitoring photodiode composed of crystalline silicon is stacked on a portion of the upper surface of the submount backward from the laser diode.

Semiconductor laser device

There is provided and manufactured, at a low cost and with high yields, a semiconductor light emitting device which allows extraction of light produced in an emitter layer not only from its top surface but also from its side surfaces and which has high luminance. An AlGaInP-based semiconductor light emitting device having a contact layermade of (AlGa)InP (0&#x2266;y&#x2266;1, 0&#x3c;z&#x3c;1) disposed between an emitter layerand a transparent substratewhich is transparent to emission wavelengths from the emitter layer

Semiconductor light emitting device and method for manufacturing same

A semiconductor light emitting element of a monolithic structure, including: a first-conductivity-type semiconductor substrate; an active layer formed on the first-conductivity-type semiconductor substrate; a second-conductivity-type clad layer formed on the active layer; and a current diffusion layer formed on the second-conductivity-type clad layer, wherein the active layer is of a first conductivity type.

Semiconductor light emitting element

A light-emitting diode includes: a semiconductor substrate; and a layered structure, made of an AlGaInP type compound semiconductor material and provided on the semiconductor substrate. The layered structure includes: a light-emitting structure composed of a pair of cladding layers and an active layer for emitting light provided between the pair of cladding layers; and a current diffusion layer which is lattice-mismatched with the light-emitting structure. A lattice mismatch &#x394; a/a of the current diffusion layer with respect to the light-emitting structure defined by the following expression is &#x2212;1% or smaller:&#x394;()/where ais a lattice constant of the current diffusion layer, and ais a lattice constant of the light-emitting structure.

Semiconductor light-emitting diode

A light-emitting diode includes: a semiconductor substrate; and a layered structure, made of an AlGaInP type compound semiconductor material and provided on the semiconductor substrate. The layered structure includes: a light-emitting structure composed of a pair of cladding layers and an active layer for emitting light provided between the pair of cladding layers; and a current diffusion layer which is lattice-mismatched with the light-emitting structure. A lattice mismatch &#x394;a/a of the current diffusion layer with respect to the light-emitting structure defined by the following expression is &#x2212;1% or smaller:&#x394;=()/where ais a lattice constant of the current diffusion layer, and ais a lattice constant of the light-emitting structure.

A semiconductor light emitting device has in sequence on a semiconductor substrate, a multilayer reflection film, a semiconductor layer, and a quantum well active layer. A distance between an upper surface of the multilayer reflection film and a lower surface of the quantum well active layer is 2&#x3bb;/n or less, where &#x3bb; is a light emission wavelength and n is an average refractive index of the semiconductor layer disposed in between the multilayer reflection film and the quantum well active layer. A phase difference between a reflected ray of light reflected by the multilayer reflection film and an emitted ray of light from the quantum well active layer is a multiple of 2&#x3c0;. The semiconductor light emitting device stably obtains a specified peak wavelength even when there is slight variance in the distance between the upper surface of the multilayer reflection film and the lower surface of the quantum well active layer.

Semiconductor light emitting device for stably obtaining peak wave length of emission spectrum

A light emitting diode (LED) of a double hetero-junction type has a light-emitting layer of a GaAlInP material, a p-type cladding layer and an n-type cladding layer sandwiching the light-emitting layer therebetween, a p-side electrode formed on the p-type cladding layer side, and an n-side electrode formed on the n-type cladding layer side. The p-type cladding layer consists of a first p-type cladding layer positioned closer to the light-emitting layer and having a lower aluminum content and a lower impurity concentration, and a second p-type cladding layer positioned less closer to the light-emitting layer and having a higher aluminum content and a higher impurity concentration. The LED also has a current blocking layer below the p-side electrode for locally blocking electric current flowing from the p-side electrode to the n-side electrode.

Light emitting diode

A light emitting diode having, at least, an AlGaInP light emitting layer and a transparent electrode, wherein the transparent electrode is made of a ZnO film doped with a group III element or a compound thereof.

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Mihara, Japan

Hiroshi Nakatsu