Kabushiki Kaisha Toshiba

Pioneer Electronic Corporation

Toshiba Memory Corporation

Kioxia Corporation

Taiyo Yuden Co., Ltd.

Other

Hitachi, Ltd.

Dai Nippon Printing Co., Ltd.

Tokyo Shibaura Denki Kabushiki Kaisha

Bridgestone Corporation

Pioneer Corporation

Ntt Docomo, Inc.

Konica Corporation

Japan Science and Technology Agency

Kabushiki Kaisha Yaskawa Denki

Hiroshi Nakamura

Kenichi Imamiya

Koji Hosono

Koichi Kawai

Ken Takeuchi

Akihiro Tozaki

Junichi Yoshio

Toshio Yamamura

Takao Sawabe

Kaoru Yamamoto

Makoto Iwai

Tomoharu Tanaka

Yoshiaki Moriyama

Hidehiro Ishii

Tokihiro Takahashi

Nobutatsu Yamaoka

Masanobu Shirakawa

Takuya Futatsuyama

Atsuhiro Sato

Kenichi Abe

Toshifumi Minami

Yasuyuki Baba

Keisuke Yonehama

Hiroshi Shinohara

Ryuichiro Yoshimura

Tamio Ikehashi

Hiroshi Maejima

Hiroyuki Nagashima

Kazushige Kanda

Takahiro Sato

Katsuaki Isobe

Tsutomu Inoue

Hiroshi Takayanagi

Ryuichiro Sato

Takeshi Nakano

Yoshiyuki Tanaka

Koji Matsumoto

Hideo Nishijima

Hideo Kato

Toshiyuki Suzuki

Yasuo Takahashi

Hiroyuki Tanaka

Akihisa Nakajima

Masami Masuda

Atsushi Kaneko

Masami Yabusaki

Masaru Takahashi

Takao Terayama

Hiroyuki Iida

Yasuo Maruyama

Susumu Aiuchi

Yasuhiko Takamuki

Hideo Morita

Takeshi Wada

Masami Fukui

Norihiro Fujita

Toshihiko Himeno

Seiji Shinohara

Mikio Ogawa

Takanari Inatomi

Masaki Fujiu

Makoto Tsuruta

Nobuaki Okada

Kazuhisa Kanazawa

Mikito Nakabayashi

Hideko Odaira

Kenichiro Tada

Katsumi Abe

Tadashi Noguchi

Mariko Hayashi

Shoichi Hirata

Tomoyuki Ohtani

Suguru Sakaguchi

Hiroyoshi Hidaka

Masatoshi Kawashima

Masatomo Nakano

Toshiharu Ishida

Yuji Aoki

Kazuhiro Tsuruta

Yasuyuki Uchiyama

Hiroyuki Nakano

Takeshi Hongo

Shigeki Maruyama

Tsugio Yokoyama

Hideo Wada

Toshiro Sakai

Hiromitsu Imori

Takayo Hasegawa

Housei Higashi

Yukichi Saito

Ichiro Miyano

Tamotsu Shimizu

Shigeo Kasai

Hideki Tateishi

Isao Umezawa

Junichiro Uda

Tsutomu Koizumi

Hironari Kobayashi

Sadao Hattori

Osamu Nagata

A memory includes first and second select gate transistors, memory cells, a source line, a bit line, a selected word line which is connected to a selected memory cell as a target of a verify reading, a non-selected word line which is connected to a non-selected memory cell except the selected memory cell, a potential generating circuit for generating a selected read potential which is supplied to the selected word line, and generating a non-selected read potential larger than the selected read potential, which is supplied to the non-selected word line, and a control circuit which classifies a threshold voltage of the selected memory cell to one of three groups by verifying which area among three area which are isolated by two values does a cell current of the selected memory cell belong, when the selected read potential is a first value.

Nonvolatile semiconductor memory including a read operation

A semiconductor memory device according to an embodiment includes a substrate, a first memory cell, a first bit line, a first word line, a first transistor, and a second transistor. The first memory cell is provided above the substrate. The first bit line extends in a first direction. The first bit line is coupled to the first memory cell. The first word line extends in a second direction intersecting the first direction. The first word line is coupled to the first memory cell. The first transistor is provided on the substrate. The first transistor is coupled to the first bit line. The second transistor is provided below the first memory cell and on the substrate. The second transistor is coupled to the first word line.

Semiconductor memory device

A semiconductor memory device includes a first memory cell, a second memory cell above the first memory cell, a first word line electrically connected to a gate of the first memory cell, a second word line electrically connected to a gate of the second memory cell, and a control unit that performs an erasing operation on the first and second memory cells. During the erasing operation, the control unit applies a first voltage to a first word line and a second voltage higher than the first voltage to a second word line.

Provided is an optical fiber holder comprising a holder body and a cover. The holder body has an accommodation section capable of accommodating a plurality of optical fibers. The holder body or the cover has at least one ridge which can be disposed within the accommodation section. When the cover is closed over the holder body, a plurality of sections which can parallelly accommodate the plurality of optical fibers are parallelly formed by the inner surface of the accommodation section, the lower surface of the cover, and the ridge.

Optical fiber holder

In a semiconductor integrated circuit, an internal circuit is capable of executing a first operation and a second operation concurrently, and an output circuit outputs to the outside of the semiconductor integrated circuit information indicating whether or not the first operation is being executed and information indicating whether or not the second operation is executable.

Semiconductor integrated circuit adapted to output pass/fail results of internal operations

To provide an antireflection film that is excellent in color uniformity while suppressing the reflectance. An antireflection film containing a transparent substrate having thereon a high refractive index layer and a low refractive index layer, the antireflection film having a luminous reflectance Y value, which is measured with a specimen containing the antireflection film and a black board adhered on a side of the transparent substrate opposite to the high refractive index layer through a transparent adhesive, that satisfies the following condition (1), and an a* value and a b* value of the Lab color coordinate system, which are measured with the specimen, that satisfy the particular condition: &#x3c;Condition (1)&#x3e; assuming that an incident angle of light incident perpendicularly on a surface of the specimen on a side of the low refractive index layer is 0 degree, when light is made incident on the specimen at an incident angle of 5 degrees, specularly reflected light of the incident light has a luminous reflectance Y value of 0.50% or less.

Antireflection film, display device in which said antireflection film is used, and method for selecting antireflection film

Growing community of inventors

Fujisawa, Japan

Hiroshi Nakamura