Murata Manufacturing Co., Ltd.

Kanebo, Limited

Murata Manufacturingco., Ltd.

Hiroshi Nakagawa

Tomoyuki Ashimine

Yasuhiro Murase

Shigeki Nishiyama

Masaki Takeuchi

Hiromasa Saeki

Kenichi Tagawa

Naoki Iwaji

Junichi Yoshida

Koin Asano

Tsuneo Kawashima

Shoichi Harada

Satoru Goto

Hiroyuki Wakahara

Yoshinari Nakamura

Minoru Sakaguchi

Norio Awata

A capacitor that includes an insulating base material having a first main surface and a second main surface facing each other, the insulating base material defining first and second trenches extending from the first main surface into the base material such that first trench and the second trench overlap each other; a first conductor in the first trench; a first external electrode on the first main surface of the base material and connected to the first conductor; a second conductor in the second trench; and a second external electrode on the second main surface of the base material and connected to the second conductor.

Front and back electrode trench capacitor

A capacitor that includes a substrate having a main surface with at least one of a recess or a projection, a dielectric film extending along the at least one of the recess or the projection and having an equivalent oxide thickness of 600 nm or more, and a conductor film covering at least part of the dielectric film.

Capacitor

A capacitor that includes a substrate, a dielectric portion, and a conductor layer. The dielectric portion includes a thick film portion and a thin film portion. The thick film portion has a thickness larger than the average thickness of the dielectric portion in a direction perpendicular to the first main surface. The thin film portion has a thickness smaller than the average thickness of the dielectric portion in the direction perpendicular to the first main surface. The thick film portion has a larger relative permittivity than the thin film portion.

Capacitor and method for manufacturing the same

A CR snubber element includes a first resistance part, a first capacitance part, a second resistance part, and a second capacitance part. The first capacitance part is connected in series to the first resistance part. The second resistance part is connected in series to the first resistance part and the first capacitance part and the second capacitance part is connected in parallel to the second resistance part. The CR snubber element is configured such that the second resistance part is disconnected when the first capacitance part is short-circuited.

CR snubber element

A semiconductor apparatus that includes a semiconductor substrate having a first main surface and a second main surface, a first electrode opposing the first main surface of the semiconductor substrate, a dielectric layer between the semiconductor substrate and the first electrode, a second electrode opposing the second main surface of the semiconductor substrate, and a resistance control layer between the semiconductor substrate and the second electrode. The resistance control layer includes a first region having a first electrical resistivity and electrically connecting the semiconductor substrate and the second electrode, and a second region having a second electrical resistivity higher than the first electrical resistivity of the first region and adjacent to the first region.

Semiconductor apparatus

A semiconductor device that includes a semiconductor substrate having a first main surface and a second main surface, a first electrode opposing the first main surface of the semiconductor substrate, a dielectric layer between the semiconductor substrate and the first electrode, a first resistance control layer on the first electrode, a wiring part on the first resistance control layer, and a second electrode opposing the second main surface of the semiconductor substrate. The first resistance control layer includes a first region that has a first electrical resistivity and that electrically connects the first electrode and the wiring part, and a second region that is aligned with the first region and has a second electrical resistivity higher than the first electrical resistivity of the first region.

Semiconductor device

A capacitor that includes a substrate having a principal surface; a dielectric film on the principal surface of the substrate; and an electrode layer on the dielectric film. The substrate has a recess structure portion with at least one recess portion in a second region outside a first region where the electrode layer overlaps the dielectric layer when viewed in a plan view from a normal direction of the principal surface of the substrate, and the dielectric film is on the recess structure portion.

Capacitor and method for manufacturing capacitor

A capacitor is provided that includes a base having a first main surface and a second main surface opposing each other with a trench formed on a side of the first main surface (A. Moreover, a dielectric film is disposed in a region that includes an inside of the trench on the side of the first main surface of the base; a conductor film is provided that includes a first conductor layer disposed on the dielectric film, which is the region including the inside of the trench and a second conductor layer disposed on the first conductor layer; and a stress relieving portion is provided in contact with at least a part of the end of the first conductor layer. Moreover, a thickness of the stress relieving portion is smaller than a thickness of the conductor film, outside the trench portion of the first main surface of the base.

A capacitor that includes a first capacitor layer having a first substrate provided with a first trench structure having a trench, a first electrode, and a second electrode provided in a region of the first trench structure that includes a trench, and a second capacitor layer having a second substrate, a third electrode, and a fourth electrode. Moreover, the first capacitor layer and the second capacitor layer are disposed such that the second electrode and the third electrode oppose each other and are electrically connected.

A capacitor that includes a substrate; a capacitor formation region in which one or more trenches are formed; a dummy region located between the capacitor formation region and an end of the substrate; a first electrode formed inside the one or more trenches to cover the capacitor formation region, and a dielectric film; a second electrode that covers the capacitor formation region and has a different potential from the first electrode; and an extended portion that formed in the dummy region. Moreover, the extended portion forms a recess or a protrusion on the substrate in a path from the second electrode to the end portion of the substrate.

A capacitor that includes a conductive porous base material with a porous part; an upper electrode opposite the porous part, the upper electrode having, as its main constituent, a material selected from one of ruthenium, platinum, and an alloy of ruthenium and platinum; and a dielectric layer between the upper electrode and the conductive porous base material.

Compositions for percutaneous administration

Disclosed is a vaginal suppository comprising a pharmaceutically acceptable salt of dehydroepiandrosterone sulfate (hereinafter referred to as DHAS), an amino acid and a hard fat having a hydroxy value of not more than 50. This suppository features an improved absorption of the active drug from the vagina plus a good shelf life.

Vaginal suppository

A leather-like material having a soft feed and a high water vapor permeability comprises a substrate of a fiber aggregate and a microporous grain layer mainly comprising a polyurethane elastomer and having an average thickness between 20 .mu.m and 300 .mu.m, preferably between 20 .mu.m and 200 .mu.m, more preferably 20 .mu.m and 100 .mu.m. The grain layer has an inner layer portion permeating partly into interstices of the fiber aggregate and bonding thereto, a topside having been coagulated to set up with a flat and smooth, or animal skin-like, grain appearance and micropores having an average pore diameter gradient of from at least 4 .mu.m in the inner layer portion to at most 3 .mu.m in the surface layer portion. The leather-like material is characterized by a water vapor permeability of from 1 to 30 mg/cm.sup.2.hr and a Gurley stiffness ratio of article to substrate of at most 1.5. The leather-like material of the invention is manufactured by a process comprising the steps in sequence of: coating a release belt with a water-miscible solvent solution of a polyurethane elastomer; superimposing a water-moisturized substrate on the coated solution; heating the topside surface of the substrate to coagulate said polyurethane elastomer by the action of saturated water vapor forming within the substrate; and then releasing the resultant leather-like material from the release belt, followed by washing with water and drying.

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Nagaokakyo, Japan

Hiroshi Nakagawa